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| MMBT4403 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * 0.055(1.40) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM TATINGES ( @ TA = 25OC unless otherwise noted) RATINGS Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C o O SYMBOL PD TJ TSTG VALUE 300 150 -55 to +150 UNITS mW o o Max. Operating Temperature Range Storage Temperature Range C C ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -0.1mAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -0.1mAdc, I C = 0) Base Cutoff Current (V CE = -35Vdc, V BE(off) = -0.4Vdc) Collector Cutoff Current (V CE = -35Vdc, V EB = -0.4Vdc) V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX -40 -40 -5.0 -0.1 -0.1 Vdc Vdc Vdc uAdc uAdc Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc) (I C = -1.0mAdc, V CE = -1.0Vdc) (I C = -10mAdc, V CE = -1.0Vdc) (I C = -150mAdc, V CE = -2.0Vdc) (I C = -500mAdc, V CE = -2.0Vdc) Collector-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) VCE(sat) hFE 30 60 100 100 20 -0.75 300 -0.4 -0.75 -0.95 -1.3 Vdc - VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -20mAdc, V CE = -10Vdc, f= 100MHz) Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz) Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) fT Ccb Ceb hie hre hfe hoe 200 1.5 0.1 60 1.0 8.5 30 15 8.0 500 100 MHz pF pF kohms X 10 -4 umhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -30Vdc, V EB = -2.0Vdc, I C = -150mAdc, I B1 = -15mAdc) td tr ts tf 15 20 225 30 ns ns (V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) < < Note : Pulse Test: Pulse Width-300ms,Duty Cycle-2.0% RATING AND CHARACTERISTICS CURVES ( MMBT4403 ) 25 C 30 20 CAPACITANCE (pF) Ceb Q, CHARGE (nC) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 3.0 2.0 0.1 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 10 20 30 50 70 100 200 300 500 REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) O 100OC VCC=30V IC/IB=10 10 7.0 5.0 Ccb QT QA Figure 1. Capacitances 100 70 50 t, TIME (ns) 30 20 IC/IB=10 tr @ VCC= 30V tr @ VCC= 10V td@ VBE(off)= 2V td @ VBE(off)= 0V 100 70 50 t, TIME (ns) 30 20 Figure 2. Charge Data VCC=30V IC/IB=10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC,COLLECTOR CURRENT (mA) Figure 3. Turn-On Time 300 200 IC,COLLECTOR CURRENT (mA) Figure 4. Rise Times IC/IB=10 ts',STORAGE TIME (ns) IC/IB=20 100 70 50 30 IB1= IB2 ts' =ts -1/8tf 10 20 30 50 70 100 200 300 500 IC,COLLECTOR CURRENT (mA) Figure 5. Storage Time RATING AND CHARACTERISTICS CURVES ( MMBT4403 ) VCE = -10Vdc, TA = 25 C O Bandwidth = 1.0Hz 10 10 8 6 4 2 0 IC = 1.0mA, RS = 430W IC = 500uA, RS = 560W IC = 50uA, RS = 2.7kW IC = 100uA, RS = 1.6kW RS = OPTIMUM SOURCE RESISTANCE f = 1 kHz NF, NOISE FIGURE (dB) NF,NOISE FIGURE (dB) 8.0 6.0 4.0 2.0 0 50 IC = 50uA 100uA 500uA 1.0mA 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k f, FREQUENCY (KHz) Figure 6.Frequency Effects 1000 500 hfe, CURRENT GAIN 300 200 100 70 50 30 0.1 MMBT4403 UNIT 1 MMBT4403 UNIT 2 hie, INPUT IMPEDANCE (OHMS) 700 100k 50k 20k 10k 5k 2k 1k 500 200 100 0.1 Figure 7.Source Resistance Effects MMBT4403 UNIT 1 MMBT4403 UNIT 2 RS, SOURCE RESISTANCE (OHMS) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) Figure 8.Cuttent Gain IC, COLLECTOR CURRENT (mAdc) Figure 9.Input Impedance hre, VOLTAGE FEEDBACK RATIO (X 10-4) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 hoe, OUTPUT ADMITTANCE (umhos) 500 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10.Voltage Feedback Ratio Figure 11.Temperature Coefficients RATING AND CHARACTERISTICS CURVES ( MMBT4403 ) 3.0 hFE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0V VCE = 10V TJ = 125OC 25OC 1.0 0.7 0.5 0.3 0.2 0.1 -55OC 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 Figure 12. DC Current Gain VCE, COLLECTOR - EMITTER VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0 0.005 IC, COLLECTOR CURRENT (mA) IC = 1.0 mA 10 mA 100 mA 500 mA 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 Figure 13. Collector Saturation Region 1.0 0.8 0.6 0.4 0.2 VCE(sat)@IC/IB = 10 0 0.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 TJ = 25OC COEFFICIENT (mV/ C) VBE(sat)@IC/IB = 10 VBE(sat)@VCE = 10V 0.5 0 O IB, BASE CURRENT (mA) QVC for VCE(sat) 0.5 1.0 1.5 2.0 2.5 0.1 QVS for VBE VOLTAGE (V) 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 14. "ON" Voltages Figure 15. Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. |
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