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T410/T435-B
HIGH PERFORMANCE TRIACS
PRELIMINARY DATASHEET
.I .V .I
FEATURES TRMS = 4 A DRM = 400 V to 800 V GT 10mA and 35mA
A2
A2 A1
DESCRIPTION The T410/T435-B serie of triacs uses a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using mount technology. ABSOLUT MAXIMUM RATINGS
Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current IG = 500mA diG/dt = 1A/s Parameter Tc = 110 C tp = 8.3 ms tp = 10 ms I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10 s Value 4 35 30 4.5 10 50 - 40 to + 150 - 40 to + 125 260 DPAK (Plastic)
G
Unit A A
A2s A/s
C C C
Symbol
Parameter 400B
T410 or T435600B 600 700B 700 800B 800
Unit
VDRM VRRM
Repetitive peak off-state voltage Tj = 125 C
400
V
March 1996 Ed : 1
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T410/T435-B
THERMAL RESISTANCES
Symbol Rth (j-c) Rth (j-c) Junction to case for DC Junction to case for AC 360 conduction angle ( F= 50 Hz) Parameter Value 3.5 2.6 Unit C/W C/W
GATE CHARACTERISTICS (maximum values)
PG(AV) = 1 W PGM= 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) VGM = 16 V (tp = 20 s).
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant T410 IGT VGT VGD tgt VD=12V VD=12V (DC) RL=33 (DC) RL=33 Tj=25C Tj=25C Tj=125C Tj=25C I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP 10 1.5 0.2 2 Value T435 35 mA V V s Unit
VD=VDRM RL=3.3k VD=VDRM IG = 500mA dIG/dt = 3A/s ITM = 5.5A IG=1.2 IGT IT= 100mA gate open ITM= 5.5A tp= 380s VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (dV/dt)c = 0.1V/s (dV/dt)c = 20V/s
IL IH * VTM * IDRM IRRM dV/dt * (dI/dt)c *
Tj=25C Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=125C
I-II-III
MAX MAX MAX MAX MAX MIN MIN
30 15 1.75 10 2 30 2.7 1.8
60 35
mA mA V A mA
250 4.4 2.7
V/s A/ms
* For either polarity of electrode A2 voltage with reference enceenceto electrode A1.
ORDERING INFORMATION
T
TRIAC
4
10 - 600
B
PACKAGES B = DPAK
CURRENT VDRM / VRRM SENSITIVITY
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T410/T435-B
PACKAGE MECHANICAL DATA DPAK Plastic
REF. DIMENSIONS Millimeters
E B2 C2 L2 A
Inches Min. Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.031 0.039 8
Min. A A1 A2 B
D H L4 B G A1 C
Typ.
Max
2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0
2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368 1.00 0.023 8 0
B2 C C2 D E G H
A2 0.60 MIN.
L2 L4 V2
V2
MARKING : Type number
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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