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VISHAY IL66B Vishay Semiconductors Optocoupler, Photodarlington Output, With Internal RBE Features * * * * * * * Internal RBE for high stability Isolation test voltage, 5300 VRMS No base connection High isolation resistance Standard plastic DIP package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179019 A1 C2 NC 3 6 NC 5C 4E e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * BSI IEC60950 IEC60065 * CSA 93751 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO driving and load circuits. They can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. Order Information Part IL66B-1 IL66B-2 IL66B-1X006 Remarks CTR > 200 %, DIP-6 CTR > 750 %, DIP-6 CTR > 200 %, DIP-6 400 mil (option 6) CTR > 750 %, DIP-6 400 mil (option 6) CTR > 750 %, SMD-6 (option 9) Description The IL66B is an optically coupled isolator employing a gallium arsenide infrared emitter and a silicon photodarlington detector. Switching can be accomplished while maintaining a high degree of isolation between IL66B-2X006 IL66B-2X009 For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 55 C Test condition Symbol VR IF Pdiss Value 6.0 60 100 1.33 Unit V mA mW mW/C Document Number 83639 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL66B Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO BVECO Pdiss Value 60 5.0 200 2.6 Unit V V mW mW/C Coupler Parameter Isolation test voltage Isolation resistance Test condition t = 1.0 sec. VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total dissipation Derate linearly Creepage path Clearance path Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb Tsld from 25 C Symbol VISO RIO RIO Ptot Value 5300 1012 1011 250 3.3 7 7 - 55 to + 150 - 55 to + 100 10 Unit VRMS mW mW/C min mm min mm C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 3.0 V VR = 0 Symbol VF IR CO Min Typ. 1.25 0.01 25 Max 1.5 100 Unit V A pF Output Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Test condition IC = 100 A VCE = 50 V, IF = 0 Symbol BVCEO ICEO Min 60 1.0 100 Typ. Max Unit V nA Coupler Parameter Saturation voltage Test condition IC = 10 mA Symbol VCEsat Min Typ. Max 1.0 Unit V Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 2.0 mA, VCE = 5.0 V Part IL66B-1 IL66B-2 Symbol CTR CTR Min 200 750 1000 Typ. Max Unit % % www.vishay.com 2 Document Number 83639 Rev. 1.5, 26-Oct-04 IL66B Vishay Semiconductors Switching Characteristics Parameter Turn-On, Turn-Off time Test condition VCC = 10 V, IF = 2 mA, RL = 100 Symbol ton, toff Min Typ. Max 200 Unit s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.4 VF - Forward Voltage - V 10000 Ta = -55C 1000 Ice - Collector-emitter current - mA 1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Vce = 5 V 100 Vce = .4 V 10 1 .1 .01 .001 .1 10 1 IF - LED Current - mA 100 Ta = 25C Ta = 85C 1 10 IF - Forward Current - mA 100 iil66b_04 iil66b_01 Figure 1. Forward Voltage vs. Forward Current Figure 4. Non-Saturated and Saturated Collector Emitter Current vs. LED Current 50 40 30 20 10 0 220 i 10 K i Vcc = 5 V Vth = 1.5 V 2.0 NCTRce - Normalized CTRce Normalized to: 1.5 Vce = 5 V IF = 2 mA 1.0 Vce = 5 V 0.5 Vce = 1 V 0.0 .1 1 10 IF - LED Current - mA 10 0 tpHL - High/Low Propagation Delay - s 0 iil66b_05 5 10 15 IF - LED Current - mA 20 iil66b_02 Figure 2. Normalized Non-saturated and Saturated CTRCE vs. LED Current 1.2 NCTRce - Normalized CTRce Figure 5. High to low Propagation Delay vs. Collector Load Resistance and LED Current 150 tpLH - Low/High Propagation Delay - s Normalized to: Vce = 5 V Vce = 5 V IF = 10 mA 1.0 0.8 0.6 0.4 0.2 0.0 .1 125 100 75 Vcc = 5 V 50 25 0 Vth = 1.5 V 10 K 2 K Vce = .4 V 1 10 IF - LED Current - mA 100 1000 220 K 0 iil66b_06 5 10 15 20 IF - LED Current - mA iil66b_03 Figure 3. Normalized Non-saturated and Saturated CTRCE vs. LED Current Document Number 83639 Rev. 1.5, 26-Oct-04 Figure 6. Low to High Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 3 IL66B Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .0040 (.102) .0098 (.249) .020 (.51) .040 (1.02) .012 (.30) typ. 18493 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .315 (8.00) min. 15 max. www.vishay.com 4 Document Number 83639 Rev. 1.5, 26-Oct-04 IL66B Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83639 Rev. 1.5, 26-Oct-04 www.vishay.com 5 |
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