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SPICE MODELS: DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE DDTA (R1-ONLY SERIES) E PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistor, R1 only Lead Free/RoHS Compliant (Note 2) B A C SOT-523 Dim Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4 BC E TOP VIEW A B C D G H J K L M Mechanical Data * * * * * * * * * Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.002 grams (approx.) Ordering Information (See Page 2) K G H M N J D L R1 B C N a All Dimensions in mm E P/N DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE R1 (NOM) 1KW 2.2KW 4.7KW 10KW 22KW 47KW 100KW 200KW MARKING P01 P03 P07 P12 P16 P19 P23 P25 SCHEMATIC DIAGRAM Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC (Max) Pd RqJA Tj, TSTG Value -50 -50 -5 -100 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30319 Rev. 5 - 2 1 of 4 www.diodes.com DDTA (R1-ONLY SERIES) E a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -50 -50 -5 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 Max Unit 3/4 3/4 3/4 -0.5 -0.5 V V V mA mA IC = -50mA IC = -1mA IE = -50mA VCB = -50V VEB = -4V IC/IB = -10mA/-1mA IC/IB = -5mA/-0.5mA IC/IB = -2.5mA/-.25mA IC/IB = -1mA/-.1mA IC/IB = -5mA/-0.5mA IC/IB = -2.5mA/-.25mA IC/IB = -1mA/-0.1mA IC/IB = -.5mA/-.05mA IC = -1mA, VCE = -5V VCE = -10V, IE = 5mA, f = 100MHz DDTA113TE DDTA123TE DDTA143TE DDTA114TE DDTA124TE DDTA144TE DDTA115TE DDTA125TE Test Condition NEW PRODUCT Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage VCE(sat) 3/4 3/4 -0.3 V DC Current Transfer Ratio Gain-Bandwidth Product* * Transistor - For Reference Only hFE fT 100 3/4 250 250 600 3/4 3/4 MHz Ordering Information Device DDTA113TE-7-F DDTA123TE-7-F DDTA143TE-7-F DDTA114TE-7-F DDTA124TE-7-F DDTA144TE-7-F DDTA115TE-7-F DDTA125TE-7-F Notes: (Note 3) Packaging SOT-523 SOT-523 SOT-523 SOT-523 SOT-523 SOT-523 SOT-523 SOT-523 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXXYM Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P XXX = Product Type Marking Code (See Page 1, e.g. P01 = DDTA113TE) YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2004 R Apr 4 May 5 2005 S Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D March 3 DS30319 Rev. 5 - 2 2 of 4 www.diodes.com DDTA (R1-ONLY SERIES) E TYPICAL CURVES - DDTA114TE NEW PRODUCT VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 250 Pd, POWER DISSIPATION (MILLIWATTS) 1 IC/IB = 10 200 25C 0.1 -25C 75C 150 100 0.01 50 0 -50 0 50 100 150 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC TA, AMBIENT TEMPERATURE (C) Fig. 1 Derating Curve 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 75C 12 IE = 0V 10 25C -25C COB, CAPACITANCE (pF) 100 8 6 4 2 0 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 100 0 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 100 75C IC, COLLECTOR CURRENT (mA) 25C VO = 0.2 10 -25C 1 Vin, INPUT VOLTAGE (V) -25C 1 75C 25C 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current DS30319 Rev. 5 - 2 3 of 4 www.diodes.com DDTA (R1-ONLY SERIES) E IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30319 Rev. 5 - 2 4 of 4 www.diodes.com DDTA (R1-ONLY SERIES) E |
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