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| IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (~3 Times Rated Current) n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 600 20 400 800 400 800 1500 +150 -40 +125 2500 3.5 4.5 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 4.5 Nm (M6) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=400mA VGE=15V IC=400A VGE=0V VCE=10V f=1MHz VCC=300V IC=400A VGE= 15V RG=4.7 IF=400A VGE=0V IF=400A Min. Typ. Max. 2.0 30 7.5 2.8 Units mA A V V pF 1.2 0.6 1.0 0.35 3.0 350 4.5 26400 5870 2670 0.6 0.2 0.6 0.2 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.085 0.15 Units C/W 0.025 Collector current vs. Collector-Emitter voltage T j=25C V GE =20V,15V,12V Collector current vs. Collector-Emitter voltage T j=125C V GE =20V,15V, 12V 800 800 [A] C 600 [A] 10V 600 C 10V Collector current : I 400 Collector current : I 400 200 200 8V 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C Collector-Emitter vs. Gate-Emitter voltage T j=125C 10 10 [V] CE 8 CE [V] 8 Collector-Emitter voltage :V 6 Collector-Emitter voltage V 6 4 IC= 800A 400A 200A 4 IC= 800A 400A 2 2 200A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =300V, R G =4.7 , V GE =15V, T j=25C 1000 1000 Switching time vs. Collector current V CC =300V, R G =4.7 , V GE =15V, Tj=125C , t r , t off , t f [nsec] , t r , t off , t f [nsec] t on t off t off t on tr tf tr tf 100 on on 100 Switching time : t 10 0 200 400 600 Collector current : I C [A] Switching time : t 10 0 200 400 600 Collector current : I C [A] Switching time vs. R G V CC =300V, I C =400A, V GE =15V, T j=25C 500 1000 t on t off Dynamic input characteristics T j=25C 25 V CC =200V 400 300V 20 400V 15 , t r , t off , t f [nsec] tr 100 tf Collector-Emitter voltage : V CE [V] 300 Switching time : t on 200 10 100 5 10 0 1 5 Gate resistance : R G [ ] 10 0 500 1000 1500 2000 Gate charge : Q G [nC] 0 2500 Forward current vs. Forward voltage V GE = O V 1000 Reverse recovery characteristics t rr , I rr vs. I F [A] rr [A] 800 F rr [nsec] T j=125C 25C I rr 125C t rr 125C I rr 25C 100 t rr 25C Reverse recovery current : I Forward current : I 600 400 200 0 0 1 2 Forward voltage : V F [V] 3 4 Reverse recovery time :t 10 0 200 400 600 Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance 4000 3500 +V GE =15V, -V GE <15V, T j<125C, R G >4.7 Thermal resistance : Rth(j-c) [C/W] Diode 0,1 IGBT 3000 Collector current : Ic [A] 2500 2000 1500 1000 500 0 SCSOA (non-repetitive pulse) 0,01 RBSOA (Repetitive pulse) 0 100 200 300 400 500 600 0,001 0,01 0,1 1 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC=300V, R G =4.7 , V GE =15V 40 100 E off 125C 30 E off 25C 20 E on 125C E on 25C 10 Capacitance vs. Collector-Emitter voltage T j=25C , E off , E rr [mJ/cycle] , C oes , C res [nF] Cies 10 on Switching loss : E Capacitance : C ies Coes Cres 1 0 0 200 400 Collector Current : I C [A] E rr 125C E rr 25C 600 800 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice May 97 |
Price & Availability of 2MBI400N-060
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