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| MCC Features l Through Hole Package l 150oC Junction Temperature Pin Configuration Bottom View omponents 21201 Itasca Street Chatsworth !"# $ % !"# BC556,B BC557,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW C B E Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. A TO-92 E B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 IC Pd Pd RqJA Unit V C Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 V V mA mW mW/oC W mW/oC o D Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature -100 625 5.0 1.5 12 200 83.3 G DIMENSIONS C/W C/W o DIM A B C D E G RqJC o Tj, TSTG -55~150 C INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com BC556 thru BC558B MCC Symbol Min Typ Max Unit ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 -5.0 -5.0 -5.0 -- -- -- -- -- -- -80 -50 -30 -- -- -- -- -- -- V -65 -45 -30 -- -- -- -- -- -- V V Collector - Base Breakdown Voltage (IC = -100 Adc) Emitter - Base Breakdown Voltage (IE = -100 mAdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) -- VBE(sat) -- VBE(on) -0.55 -- -0.62 -0.7 -0.7 -0.82 -- -1.0 V ---0.3 V -- -- -- 120 120 120 120 180 420 -- -- -- 90 150 270 -- -- -- 170 290 500 120 180 300 -- -- -- 500 800 800 220 460 800 -- -- -- V -- (IC = -2.0 mAdc, VCE = -5.0 V) (IC = -100 mAdc, VCE = -5.0 V) Collector - Emitter Saturation Voltage (IC = -100mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = -100 mAdc, IB = -5.0mAdc) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) (IC = -10 mAdc, VCE = -5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob -- -- -- -- 280 320 360 3.0 -- -- -- 6.0 pF MHz Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) www.mccsemi.com BC556 thru BC558B BC557/BC558 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 TA = 25C MCC VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V 0.3 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 1. Normalized DC Current Gain Figure 2. "Saturation" and "On" Voltages -2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) VB , TEMPERATURE COEFFICIENT (mV/ C) TA = 25C -1.6 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA -0.8 -0.4 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region f T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) , Figure 4. Base-Emitter Temperature Coefficient 10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product www.mccsemi.com BC556 thru BC558B BC556 -1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 MCC -0.2 0.2 0 -0.2 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.5 -50 -100 -200 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 Figure 7. DC Current Gain Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 VB, TEMPERATURE COEFFICIENT (mV/ C) -1.0 -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.4 -1.2 -1.8 VB for VBE -55C to 125C -0.8 -2.2 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -2.6 -3.0 -0.2 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient f T CURRENT-GAIN - BANDWIDTH PRODUCT , 40 TJ = 25C C, CAPACITANCE (pF) 20 Cib 500 VCE = -5.0 V 200 100 50 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob 20 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product www.mccsemi.com |
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