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 IT120 MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT120
The IT120 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The IT120 is a direct replacement for discontinued Intersil IT120. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). IT120 Features: High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance FEATURES DirectReplacementforINTERSILIT120 HIGH hFE @LOWCURRENT OUTPUTCAPACITANCE VBE tracking ABSOLUTEMAXIMUMRATINGS1 @25C(unlessotherwisenoted) MaximumTemperatures StorageTemperature OperatingJunctionTemperature MaximumPowerDissipation ContinuousPowerDissipation(Oneside) ContinuousPowerDissipation(Bothsides) LinearDeratingfactor(Oneside) LinearDeratingfactor(Bothsides) MaximumCurrents CollectorCurrent MIN TYP MAX 2 5 5 UNITS mV V/C nA
200@10A 2.0pF 5.0VC
65Cto+200C 55Cto+150C 250mW 500mW 2.3mW/C 4.3mW/C 10mA CONDITIONS IC=10A,VCE=5V IC=10A,VCE=5V TA=55Cto+125C IC=10A,VCE=5V
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MATCHINGCHARACTERISTICS@25C(unlessotherwisestated) SYMBOL CHARACTERISTIC |VBE1-VBE2| BaseEmitterVoltageDifferential |(VBE1-VBE2)|/T BaseEmitterVoltageDifferential ChangewithTemperature |IB1-IB2| BaseCurrentDifferential
ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTICS MIN. BVCBO CollectortoBaseVoltage 45 BVCEO CollectortoEmitterVoltage 45 BVEBO EmitterBaseBreakdownVoltage 6.2 BVCCO CollectortoCollectorVoltage 60 hFE DCCurrentGain 200 225 VCE(SAT) CollectorSaturationVoltage IEBO EmitterCutoffCurrent ICBO CollectorCutoffCurrent COBO OutputCapacitance CC1C2 CollectortoCollectorCapacitance IC1C2 CollectortoCollectorLeakageCurrent fT CurrentGainBandwidthProduct 220 NF NarrowBandNoiseFigure
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TYP. MAX. 0.5 1 1 2 2 10 3 UNITS V V V V V nA nA pF pF nA MHz dB
P-DIP (Top View)
CONDITIONS IC=10A,IE=0 IC=10A,IB=0 IE=10A,IC=02 IC=10A,IE=0 IC=10A,VCE=5V IC=1.0mA,VCE=5V IC=0.5mA,IB=0.05mA IC=0,VEB=3V IE=0,VCB=45V IE=0,VCB=5V VCC=0V VCC=60V IC=1mA,VCE=5V IC=100A,VCE=5V,BW=200Hz,RG=10K, f=1KHz
Notes: 1.AbsoluteMaximumratingsarelimitingvaluesabovewhichserviceabilitymaybeimpaired 2.Thereversebasetoemittervoltagemustneverexceed6.2volts;thereversebasetoemittercurrentmustneverexceed10A.
Available Packages: IT120 in P-DIP IT120 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.


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