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| LED - Chip 07.01.2008 Radiation Green Type Standard Technology GaP/GaP EL-560-10 rev. 03 Electrodes P (anode) up 235 117 typ. dimensions (m) typ. thickness 270 (20) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m structured, 25% covered Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power1 Radiant power2 Luminous intensity1 Luminous intensity2 Peak wavelength Dominant wavelength Spectral bandwidth at 50% 1 2 Symbol VF VR Min Typ 2.1 Max 2.4 Unit V V IF = 20 mA IR = 10 A IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA 5 e e IV IV P D 0.5 28 32 60 W W mcd mcd 570 nm nm nm 1 1.2 2.4 550 560 563 24 Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-560-10 Lot N V(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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