Part Number Hot Search : 
2SC1974 SK70KQ16 EN39S R3000 3KA18 B3865 SN8P250 A02HC
Product Description
Full Text Search
 

To Download CEB02N6A Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5 7.5 7.5 7.5 ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G
D
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F
Units V V
650
30
1.5 4.5 42 0.33 90 1.4 -55 to 150 1.5 4.5 28 0.22 90 1.4
e e
A A W W/ C mJ A C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA 3 62.5 Limit 4.5 65 Units C/W C/W
2003.December 4-6
http://www.cetsemi.com
CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 0.8A VDS = 480V, ID = 1A, VGS = 10V VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18 Test Condition VGS = 0V, ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 0.8A VDS = 50V, ID = 0.8A 2 5.8 0.8 176 48 21 11 16 28 16 15 2.4 8.7 1.5 1.5 27 40 35 40 21 Min 650 25 100 -100 4 7.5 Typ Max Units V
A
4
nA nA V S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =1.4A, VDD = 50V, RG = 25, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.2A .
4-7
CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
1.8 VGS=10,9,8,7V 1.5 1.2 0.9 0.6
ID, Drain Current (A)
VGS=6V
ID, Drain Current (A)
TJ=150 C 10
0
VGS=5V
0.3
-55 C 25 C 10
-1
VGS=4V
0.0 0 2 4 6 8 10 12
1.VDS=40V 2.Pulse Test 4 6 8 10
2
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
300 250 200 150 100 Coss 50 0 0 5 10 15 20 25 Crss Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=0.8A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
0
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250A
IS, Source-drain current (A)
10
VGS=0V
10
-1
10 -25 0 25 50 75 100 125 150
-2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
4-8
CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
VGS, Gate to Source Voltage (V)
15 VDS=480V ID=1A 10
1
ID, Drain Current (A)
12
RDS(ON)Limit 10
0
100s 1ms 10ms DC
4
9
6
10
-1
3
0 0 5 10 15 20
10
-2
TC=25 C TJ=150 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01
PDM t1 t2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC= P* RcJC (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4-9


▲Up To Search▲   

 
Price & Availability of CEB02N6A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X