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2000 SHORT FORM CATALOG
ADVANCED POWER TECHNOLOGY
ISO9001 Certified MIL-PRF-19500
POWER DISCRETE SEMICONDUCTORS
TECHNOLOGY TO THE NEXT POWER.
1
Advanced Power Technology
Technology .... Beginning in 1984 with the introduction of Power MOS IV(R), APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as a technological leader in MOS controlled devices and FREDs and to deliver products which contribute to our customers' success in delivering higher performance power systems.
Service .... Outstanding technology is only part of the story. A global network of stocking distributors, representatives and applications engineers are in place to support all phases of your product design, evaluation and procurement activities. In a world which demands superior execution, we've won awards as a service leader.
Quality .... Our commitment is to excellence in all things we do. Whether you are evaluating the quality of our products, our technical assistance, our customer service or the quality of our internal communications systems, excellence is our standard. We understand that ISO9001, MIL-PRF-19500 and 8D are only the beginning.
What's New
* * * * * * * * * * Low Charge/Low Capacitance Power MOS VITM MOSFETs and FREDFETs Linear MOSFETs Expanded Hermetic Product Offering Power MOS V(R) MOSFETs and FREDFETs Thunderbolt IGBTTM .... Capable of replacing MOSFETs up to 150kHz Operation Fast IGBT .... for up to 40kHz Operation Center-Tap FREDs .... 200V - 1000V High Frequency FREDs .... Replacement for GaAs Rectifiers New Packages .... Tape and reel D3 PAK, T-MAXTM and TO-267 RF MOSFETs .... Operation up to 100MHz
2
Table of Contents
POWER MOS VITM MOSFETs & FREDFETs
4-6
RF MOSFETs
19
LINEAR MOSFETS NEW GENERATION POWER MOS V(R) MOSFETs & FREDFETs IGBT's
7
HERMETIC MOSFETs
20-21
8-13
HERMETIC IGBT's & FREDs
22
14-15
CUSTOM PRODUCTS
23
FAST RECOVERY EPITAXIAL DIODES (FREDS)
16-18
SALES OFFICES
BACK COVER
Packaging Information
Package TO-247 T-MAXTM TO-220 ISOTOP (R) TO-3 TO-264 D3 PAK D3 PAK Tape and Reel Quantity Per Tube 30 UNITS 30 UNITS 50 UNITS 10 UNITS 21 UNITS 25 UNITS 30 UNITS 400/REEL
Visit APT's Website to Download Datasheets http://www.advancedpower.com
3
EWL C Series - POWER MOS VITM N
WITH ALL THE BENEFITS OF POWER MOS V(R)........PLUS
Low Gate Charge Low Capacitances .........
New advanced designs, thicker gate oxide, and shallower device junctions provide for significant reductions in gate charge and capacitances as shown in the table below. The benefits include reduction in gate driver requirements and improved efficiencies.
Faster Switching / Lower Switching Losses .........
The lower capacitances combined with the low internal gate resistance resulting from new advanced designs and the unique metal gate structure provide for a 50% reduction in total switching time compared to POWER MOS VTM. This dramatically improved switching efficiency enables higher frequency operation and smaller power supplies.
Comparison of Key Parameters by Technology for 500 Volt 370 Watt MOSFET
LOW GATE Charge MOS IV(R) 5020BN LC Series MOS VITM 5017BLC Improvement LC Series vs MOS IV(R) Improvement LC Series vs MOS V(R)
Parameter
MOS V(R) 5017BVR
RDS, mW ID, Amps Qg, nC Ciss, pF Crss, pF EAS, mJ
Max Max Typ Typ Typ Max
200 28 140 2890 230 -
170 30 200 4400 265 1300
170 30 85 3025 120 1300
15% 7% 29% 54% -
58% 31% 55% -
4
EWL C Series - POWER MOS VI N
BVDSS Volts 1000 500 RDS(ON) Ohms 1.000 0.860 0.200 0.170 0.150 0.040 0.038 1.000 0.860 0.200 0.170 0.040 0.038 0.500 0.400 0.140 0.100 0.080 0.022 0.018 0.500 0.400 0.140 0.100 0.080 0.022 0.018 0.500 0.250 0.100 0.080 0.050 ID (cont) Amps 11 13 26 30 32 59 67 11 13 26 30 59 67 21 25 37 47 58 100 100 21 25 37 47 58 100 100 25 34 44 53 77 PD Watts 280 370 300 370 370 280 370 280 370 300 370 280 370 520 625 450 520 625 520 625 520 625 450 520 625 520 625 450 700 450 520 700 Ciss(pF) Crss(pF) Typ Typ 2330 2835 2500 3025 3025 3100 3400 2330 2835 2500 3025 3100 3400 5000 5830 3650 5200 6200 6400 7600 5000 5830 3650 5200 6200 6400 7600 5000 11250 5200 6200 11350 90 110 100 120 120 100 120 90 110 100 120 100 120 190 220 145 200 240 170 200 190 220 145 200 240 170 200 190 430 200 240 440 Qg(nC) Typ 80 100 70 85 85 60 70 80 100 70 85 60 70 170 190 105 150 180 115 140 170 190 105 150 180 115 140 170 380 150 180 330 EAS mJ 1210 1300 1300 1300 1300 1300 1300 1210 1300 1300 1300 1300 1300 2500 3000 1600 2500 3000 2500 3000 2500 3000 1600 2500 3000 2500 3000 2500 3600 2500 3000 3600 APT Part Number
TM
MOSFETs
Samples Available NOW 1Q00 NOW NOW NOW 2Q00 2Q00 1Q00 1Q00 1Q00 1Q00 2Q00 2Q00 2Q00 2Q00 1Q00 NOW 1Q00 2Q00 2Q00 2Q00 2Q00 1Q00 NOW 1Q00 2Q00 2Q00 2Q00 1Q00 1Q00 1Q00 1Q00 Package Style
200
APT1001RBLC APT10086BLC APT5020BLC APT5017BLC APT5015BLC APT20M40BLC APT20M38BLC APT1001RSLC APT10086SLC APT5020SLC APT5017SLC APT20M40SLC APT20M38SLC APT10050B2LC APT10040B2LC APT5014B2LC APT5010B2LC APT50M80B2LC APT20M22B2LC APT20M18B2LC APT10050LLC APT10040LLC APT5014LLC APT5010LLC APT50M80LLC APT20M22LLC APT20M18LLC APT10050JLC APT10025JLC APT5010JLC APT50M80JLC APT50M50JLC
TO-247
1000 500 200
D3 PAK
1000 500
T-MAXTM
200
1000 500
TO-264
200
1000 500
ISOTOP(R)
S
TO-247
S D
D PAK
3
T-Max
TO-264
G
SO
2 T-
27
TO-247 [B]
D3 PAK[S]
T-MAXTM [B2] 5
TO-264[L]
ISOTOP(R)[J] (ISOLATED BASE)
EW C Series - POWER MOS VI NL
BVDSS Volts 1000 500 200 RDS(ON) Ohms 1.100 0.860 0.200 0.170 0.040 0.038 0.500 0.140 0.100 0.080 0.022 0.018 0.500 0.140 0.100 0.080 0.022 0.018 0.500 0.250 0.100 0.080 0.050 ID (cont) Amps 11 13 26 30 59 67 21 37 47 58 100 100 21 37 47 58 100 100 25 34 44 53 77 PD Watts 280 370 300 370 280 370 520 450 520 625 520 625 520 450 520 625 520 625 450 700 450 520 700 Ciss (pF) Typ 2300 2800 2800 3000 3100 3400 5000 4100 5600 6700 6400 7600 5000 4100 5600 6700 6400 7600 5000 11300 5600 6700 12600 Crss (pF) Typ 65 80 80 105 100 120 145 120 155 185 170 200 145 120 155 185 170 200 145 355 155 185 340 Qg (nC) Typ 90 110 80 100 60 70 200 115 155 190 115 140 200 115 155 190 115 140 200 400 155 190 345 trr (nsecs) Max 200 200 250 250 200 225 250 250 250 250 220 220 250 250 250 250 220 220 250 250 250 250 250 EAS mJ 1210 1300 1300 1300 1300 1300 2500 1600 2500 3000 2500 3000 2500 1600 2500 3000 2500 3000 2500 3600 2500 3000 3600
TM
FREDFETs
Samples Package Available Style 2Q00 2Q00 1Q00 1Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 1Q00 2Q00 2Q00 2Q00 2Q00 2Q00 1Q00 2Q00 2Q00
APT Part Number APT1001R1BFLC APT10086BFLC APT5020BFLC APT5017BFLC APT20M40BFLC APT20M38BFLC APT10050B2FLC APT5014B2FLC APT5010B2FLC APT50M80B2FLC APT20M22B2FLC APT20M18B2FLC APT10050LFLC APT5014LFLC APT5010LFLC APT50M80LFLC APT20M22LFLC APT20M18LFLC APT10050JFLC APT10025JFLC APT5010JFLC APT50M80JFLC APT50M50JFLC
TO-247
1000 500
T-MAXTM
200
1000 500
TO-264
200
1000 500
ISOTOP(R)
MOS VI TM AVAILABLE IN HERMETIC PACKAGES
6
N
EW
LINEAR MOSFETs
What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard MOSFET when operated with concurrent high voltage and high current near DC conditions (>100msecs). applications. This new Linear MOSFET provides 1.5-2.0 times the DC SOA capability at high voltage compared to previous APT technologies.
APT Technology Innovation
A low gain (low packing density) device provides the best SOA performance at high voltage. APT has modified its proprietary interdigitated MOSFET technology to develop a lower gain device with enhanced performance in high voltage, linear
Typical Applications:
-Active load above 200 volts such as DC dynamic loads for testing power supplies, batteries, fuel cells, etc. -High voltage, high current constant current sources.
LINEAR MOSFET'S LINEAR MOSFETs
098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321
D G S
BVDSS Volts
RDS(ON) Ohms
ID(Cont.) Amps
PD Watts
SOA1 Watts
APT Part No.
Package Style
S
S D
1000 500
0.60 0.12
18.0 43.0
520 520
325 325
APL1001J APL501J
ISOTOP(R)
G
S
OT
22
7
*ISOTOP(R)[J]
7
*Not to Scale
Power MOS V(R) MOSFETs
A new generation of high power, high voltage Power MOSFETs .... Based on a patented self aligned interdigitated open cell structure, this new generation of MOSFETs offers many advantages over our previous MOS IV(R) generation and over industry standard, closed cell devices. Lower RDS(ON) .... A 25% reduction in on-resistance is gained by employing shallower junctions and "overactive area" bonding to increase the channel packing density per unit of silicon. The packing density has been optimized to minimize the JFET resistance and capacitances. Faster Switching .... Power MOS V(R) utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. Power MOS V(R) employs shorter gate fingers and a more efficient gate bus structure than our previous generation to further reduce the series gate resistance. Multiple bond pads and wires for both source and gate contacts have also reduced impedances. The result is decreased on, rise, delay and fall times. Total switching time has been reduced by up to 60% over our previous generation. Avalanche Energy Rated .... All Power MOS V(R) devices are 100% tested and guaranteed for avalanche energy. Low Leakage Current .... Process improvements have made possible a substantial decrease over our previous generation. Maximum values for most products are now specified at 25A at 25C and 250A at 125C. Rugged Gate .... Improvements in gate oxide processing allow for specification of a high gate rupture voltage. All Power MOS V(R) MOSFETs are specified for 30V continuous operation and 40V transient operation. Lower Cost .... A less complex fabrication process, improved manufacturing yields and reduced cycle times have all contributed to a more cost-effective device.
Comparison of Lowest RDS(ON) in TO-247 Package Between New Generation Power MOS V(R) and Previous Generation Power MOS IV(R) Breakdown Voltage (V) 1200 1000 800 600 500 400 300 200 100 New Generation Power MOS V(R) RDS(ON) (mW) 1500 860 560 250 150 120 70 38 19 Previous Generation Power MOS IV(R) RDS(ON) (mW) --1000 750 300 200 160 85 45 25
Improvement New 14% 25% 17% 25% 25% 18% 16% 24%
8
0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 098765432109876543212109876543210987654321098765432121098765430987654321210987654321 2109876543 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 0987654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 098765432109876543212109876543210987654321098765432121098765432109876543210987654321 2109654321 098765432109876543212109876543210987654321098765432121098765430987876543210987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321
Any devices offered in the TO-264 package can be made available in the T-MAXTM. See page 23 for details. 1200 0.600 20 625 7700 3000 APT12060B2VR 1000 0.500 21 520 6600 2500 APT10050B2VR 0.400 25 625 7800 3000 APT10040B2VR 800 0.300 27 520 6600 2500 APT8030B2VR 0.240 33 625 7800 3000 APT8024B2VR 600 0.150 38 520 7500 2500 APT6015B2VR 0.110 49 625 8800 3000 APT6011B2VR 500 0.140 37 450 5600 1600 APT5014B2VR 0.100 47 520 7400 2500 APT5010B2VR 0.085 56 625 8700 3000 APT50M85B2VR 0.080 58 625 8700 3000 APT50M80B2VR 200 0.022 100** 520 8500 2500 APT20M22B2VR 0.018 100** 625 10,000 3000 APT20M18B2VR 100 0.011 100** 520 8600 2500 APT10M11B2VR 0.009 100** 625 10,000 3000 APT10M09B2VR BVDSS Volts 1200 1000 100 200 300 400 500 600 800 RDS(ON) Ohms 1.600 1.500 1.000 0.860 0.750 0.650 0.560 0.450 0.350 0.300 0.250 0.280 0.240 0.200 0.170 0.150 0.200 0.160 0.140 0.120 0.085 0.070 0.045 0.040 0.038 0.025 0.019 ID(Cont.) Amps 8 10 11 13 12 13 16 15 18 21 25 20 22 26 30 32 23 27 28 37 40 48 56 59 67 75** 75 PD Watts 280 370 280 370 260 280 370 250 280 300 370 250 280 300 370 370 250 280 300 370 300 370 300 300 370 300 370 Ciss(pF) Typ 3050 3700 3050 3700 2700 3050 3700 2600 3450 3750 4300 2650 3600 3700 4400 4400 2650 3350 3600 4500 4100 4890 4050 4050 5100 4300 5100 1500 EAS mJ 1210 1300 1210 1300 960 1210 1300 960 1210 1300 1300 960 1210 1300 1300 1300 960 1210 1300 1300 1300 1300 1300 1300 1300 1500 APT10M19BVR APT Part No. APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6045BVR APT6035BVR APT6030BVR APT6025BVR APT5028BVR APT5024BVR APT5020BVR APT5017BVR APT5015BVR APT4020BVR APT4016BVR APT4014BVR APT4012BVR APT30M85BVR APT30M70BVR APT20M45BVR APT20M40BVR APT20M38BVR APT10M25BVR
NEW NEW NEW NEW NEW NEW NEW NEW
** IDmax limited by package
POWER MOS V(R) MOSFETs
9
*T-MAXTM [B2] Package Style *TO-247[B]
TO-247
*Not to Scale
T-Max
POWER MOS V(R) MOSFETs
ID(Cont.) Amps 16 20 21 26 27 33 30 38 49 37 47 56 58 57 76 100 100** 100 100** 15 26 19 22 34 25 28 44 35 40 62 44 50 77 53 93 70 130 97 112 175 144 225 PD Watts 520 625 520 625 520 625 450 520 625 450 520 625 625 520 520 520 625 520 625 450 700 450 500 700 450 500 700 450 500 700 450 500 700 450 700 450 700 450 500 700 450 700 Ciss(pF) Typ 6500 7700 6600 7800 6600 8800 5600 7500 8800 5600 7400 8700 8700 7410 8500 8500 10,000 8600 10,000 6500 15000 6600 7500 15000 6600 7700 14715 7500 8800 16500 7400 9000 16800 7410 16000 8500 18000 8500 9700 18000 8600 18000 10 EAS mJ 2500 3000 2500 3000 2500 3000 1600 2500 3000 1600 2500 3000 3000 2500 2500 2500 3000 2500 3000 2500 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 3600 2500 3600 2500 1300 3600 2500 3600 APT Part No. APT12080LVR APT12060LVR APT10050LVR APT10040LVR APT8030LVR APT8024LVR APT6020LVR APT6015LVR APT6011LVR APT5014LVR APT5010LVR APT50M85LVR APT50M80LVR APT40M70LVR APT30M40LVR APT20M22LVR APT20M18LVR APT10M11LVR APT10M09LVR APT12080JVR APT12040JVR APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR APT8015JVR APT6015JVR APT6013JVR APT60M75JVR APT5010JVR APT50M85JVR APT50M50JVR APT40M70JVR APT40M35JVR APT30M40JVR APT30M19JVR APT20M22JVR APT20M19JVR APT20M11JVR APT10M11JVR APT10M07JVR Package Style
NEW
BVDSS Volts 1200 1000 800 600
500
400 300 200 100 1200 1000
800
600
500
400 300 200
100
987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321
RDS(ON) Ohms 0.800 0.600 0.500 0.400 0.300 0.240 0.200 0.150 0.110 0.140 0.100 0.085 0.080 0.070 0.040 0.022 0.018 0.011 0.009 0.800 0.400 0.500 0.430 0.250 0.300 0.280 0.150 0.150 0.130 0.075 0.100 0.085 0.050 0.070 0.035 0.040 0.019 0.022 0.019 0.011 0.011 0.007
NEW
NEW
TO-264
NEW
NEW NEW
*TO-264[L]
NEW
NEW
S G D
S
SO
2 T-
27
*ISOTOP(R)[J] (ISOLATED BASE)
*Not to Scale
098765432 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 9876543210987654321210987654321098765432109876543212109876543098787654321098765432 0987654321 98765432109876543212109876543210987654321098765432121098765432109876543210987654321 2109654321 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 98765432109876543212109876543210987654321098765432121098765432109876543210987654321 2109654321 0987654321 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 1 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 0987654321 98765432109876543212109876543210987654321098765432121098765430987876543210987654321 2109654321 1 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321
Any devices offered in the TO-247 package can be made available in D3 PAK. See page 23 for details. BVDSS Volts 1000 800 100 200 500 600 RDS(ON) Ohms 0.650 0.019 0.025 0.038 0.045 0.170 0.200 0.280 0.350 0.450 1.000 0.860 ID(Cont.) Amps 13 75 ** 75 ** 67 56 30 26 20 18 15 11 13 PD Watts 280 370 300 370 300 370 300 250 280 250 280 370 Ciss(pF) Typ 3050 5100 4150 5100 4050 4400 3700 2650 3450 2600 3050 3700 1210 EAS mJ 1500 1500 1300 1300 1300 1300 1210 1210 1300 960 960 APT8065SVR APT10M19SVR APT10M25SVR APT20M38SVR APT20M45SVR APT5017SVR APT5020SVR APT6035SVR APT5028SVR APT6045SVR APT1001RSVR APT10086SVR APT Part No.
** IDmax limited by package MOTOR DRIVE "BUCK" CONFIGURATION 500 500
POWER FACTOR CORRECTION "BOOST" CONFIGURATION
* Reduced parts count vs discretes. * Improved circuit performance due to reduced inductance.
Consult Factory for other voltages.
"BOOST" CONFIGURATION 0.100 0.100
POWER MOS V(R) MOSFET/FRED "COMBI" PRODUCTS
POWER MOS V(R) MOSFETs
44
44
450
450
7410
7410
"BUCK" CONFIGURATION
11 2500 2500 APT5010JVRU2 APT5010JVRU3
2
*ISOTOP(R)[J] (ISOLATED BASE)
*Not to Scale Package Style *D3 PAK[S]
3
D3PAK
1 4
S
OT
22
7
POWER MOS V(R) FREDFETs
FREDFET Technology .... Using a proprietary platinum lifetime control process, the performance of the intrinsic body drain diode of the Power MOS V(R) MOSFET is improved. Faster Intrinsic Diode Recovery .... The reverse recovery time has been reduced to 250ns maximum, eliminating the external FRED and Schottky rectifiers in certain circuit configurations. Improved Ruggedness .... The ruggedness of the intrinsic diode has also been improved, allowing for a commutative dv/dt rating of 5V/ns. Other Benefits .... The platinum process provides the added advantages of soft recovery, lower leakage current, lower recovery charge and more temperature independent performance than alternative processes used to improve intrinsic diode performance. Applications for FREDFETs .... Power MOS V(R) FREDFETs should be specified under the following conditions: * Whenever the intrinsic body drain diode of the MOSFET is expected to carry forward current. Examples are Half Bridge, H-Bridge and 3-Phase Bridge circuit topologies. * In soft switched circuits, where the body diode carries current. Examples are Phase Shift Controlled H-Bridge or Resonant circuit topologies. MOSFET vs FREDFET Intrinsic Diode trr
v
FREDFET MOSFET
Any devices offered in standard MOSFETs can be made available as FREDFETs. See page 23 for details.
987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 321098765432109876543212109876543210987654321098765432121098765432109876543210987654321 987654321 321098765432109876543212109876543210987654321098765432121098765432987654321 109 321098765432109876543212109876543210987654321098765432121098765432987876543210987654321 109654321 98787654321098765432 654321 321098765432109876543212109876543210987654321098765432121098765432987876543210987654321 109654321 321098765432109876543212109876543210987654321098765432121098765432109876543210987654321 109654321 1 321098765432109876543212109876543210987654321098765432121098765432987876543210987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321
BVDSS Volts 1000 800 RDS(ON) Ohms 1.100 0.860 ID(Cont.) Amps 11 13 PD Watts 280 370 Ciss(pF) Typ 3050 3700 EAS mJ trr(nsecs) Max 200 200 APT Part No. 1210 1300 960 APT1001R1BVFR APT10086BVFR APT8065BVFR APT8056BVFR 0.750 12 260 2700 3050 3700 250 200 200 APT8075BVFR
NEW
Package Style
0.650 0.560 0.240
13 16 22
280 370 280
1210 1300
600
0.250 0.200 0.170
25 26 30
370 300 370
4300
1300
250
APT6025BVFR APT5024BVFR APT5020BVFR APT5017BVFR
NEW
TO-247
500
3600 3700 4400
1210 1300 1300
250 250 250
300
0.085
40
300
4100
1300
200
APT30M85BVFR APT30M70BVFR
0.070
48
370
4890
1300
225
*TO-247[B]
200
0.045
56
300
4050 5100
1300 1300
200 240
APT20M45BVFR APT20M38BVFR
0.038
67
370
100
0.025
75
300
4300
1500
200
APT10M25BVFR APT10M19BVFR
0.019
75
370
5100
1500
200
Any devices offered in the TO-247 package can also be made available in D3 PAK See page 23 for details. 500 200 0.200 0.045 26 56 300 300 3700 4050 300 250 200 APT5020SVFR
D PAK
*D3 PAK[S] *Not to Scale
3
1300
APT20M45SVFR
** IDmax limited by package
12
0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 098765432 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 21098765432109876543212109876543210987654321098765432121098765432109876543110987654321 0987654321 1098765432 21098765432109876543212109876543210987654321098765432121098765432098765432210987654321 21098765432109876543212109876543210987654321098765432121098765432098765432210987654321 1098765431 0987654321 21098765432109876543212109876543210987654321098765432121098765432098765432210987654321 1098765431 1 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321
Any devices offered in the TO-264 package can also be made available in T-MaxTM. See page 23 for details. BVDSS Volts 1000 1000 1000 200 200 300 500 800 100 300 500 600 800 100 200 500 600 800 RDS(ON) Ohms 0.022 0.018 0.022 0.018 0.022 0.011 0.040 0.019 0.100 0.085 0.050 0.300 0.150 0.400 0.500 0.250 0.009 0.100 0.085 0.300 0.240 0.500 0.400 0.009 0.100 0.085 0.080 0.300 0.240 0.040 0.110 0.110 ID(Cont.) Amps 100** 100** 100** 100** 100** 100** 97 175 70 130 44 50 77 25 44 19 34 76 47 56 49 27 33 21 25 47 56 58 49 27 33 25 PD Watts 520 625 520 625 625 625 450 700 450 700 520 520 625 625 520 625 520 625 625 625 520 625 625 450 500 700 450 700 450 700 520 625 Ciss(pF) Typ 8500 10,000 10,000 10,000 8500 10,000 8500 18000 8500 18000 7400 9000 16300 6600 14715 6600 15000 8500 7400 8700 8800 6600 7800 6600 7800 7400 8700 8700 8800 6600 7800 7800 2500 3000 2500 3000 3000 3000 2500 3600 2500 3600 2500 3600 2500 3600 2500 2500 3000 3000 2500 3000 2500 3000 3000 3000 2500 3000 3000 EAS mJ 2500 1300 3600 2500 3000 trr(nsecs) Max 220 220 220 220 220 220 220 250 240 300 300 280 300 300 240 250 250 250 300 250 250 250 250 250 300 250 250 250 300 300 300 250 APT20M22B2VFR APT20M18B2VFR NEW APT20M22LVFR APT20M18LVFR APT5010LVFR APT50M85LVFR APT5010B2VFR APT50M85B2VFR NEW APT50M80B2VFR NEW APT20M22JVFR APT20M11JVFR APT30M40JVFR APT30M19JVFR APT5010JVFR APT50M85JVFR APT50M50JVFR APT8030JVFR APT8015JVFR APT10050JVFR APT10025JVFR APT6011LVFR APT8030LVFR APT8024LVFR APT10050LVFR APT10040LVFR APT Part No. APT10M09LVFR APT30M40LVFR APT10M09B2VFR NEW APT6011B2VFR APT8030B2VFR APT8024B2VFR APT10040B2VFR
NEW NEW NEW NEW NEW NEW NEW NEW NEW NEW
** IDmax limited by package
POWER MOS V(R) FREDFETs
13
*ISOTOP(R)[J] (ISOLATED BASE)
Package Style
*Not to Scale *T-MAXTM[B2]
G S
*TO-264[L]
TO-264
T-Max
D S
S
OT
22
7
IGBT Technology
NPT Technology .... Non-Punch-Through IGBTs are manufactured by fabricating the MOSFET structure on the surface of a lightly doped, n-substrate. No epi layer needs to be grown on the substrate. The wafer is thinned to 100m after all high temperature processes are completed to reduce the n-drift region. The pn junction required on the back of the wafer is formed using a p+ implant and a light diffusion. Making the p+ region only a few m thick keeps the voltage drop low in this region and controllable within very tight tolerances throughout the wafer. This construction provides an optimal tradeoff between VCE(SAT), switching speed and ruggedness. At full rated current, the VCE(SAT) may be higher than PT technologies, but under normal operating currents the difference is negligible. Faster Switching .... Faster turn-off speeds and lower tail currents are key advantages of NPT technology. This is primarily due to the generation of fewer minority carriers during operation in NPT devices.
n- Substrate
Easy Paralleling .... A positive temperature coefficient of VCE(SAT) makes paralleling of NPT IGBTs as easy as with MOSFETs. Tighter Electrical Parameters Distribution.... NPT technology has fewer and more easily controlled processing steps than with PT technologies. The end user can expect less lot-to-lot variation of electrical parameters than is possible with PT devices. Low Leakage Current .... No lifetime control is used in producing NPT IGBTs, eliminating the major cause of leakage current in alternative technologies.
NPT Technology vs PT Technology
MOS Structure
P ASSIV A TION P ASSIV A TION AL SOURCE OXIDE POL Y n+ p MET AL AL SOURCE OXIDE EMITTER POL Y n+ p MET AL DIELECTRIC DIELECTRIC EMITTER
p+ n-
p+ n-
n- epi Layer n++ epi Layer
Improved High Temperature Operation .... The turn-off speed and tail current of an NPT IGBT is not as temperature dependent as PT devices. These parameters remain relatively constant over the entire operating temperature range, resulting in approximately 50% less dynamic losses at high temperatures. Improved Ruggedness .... NPT technology IGBTs are avalanche energy, SCSOA and RBSOA rated.
p+ Collector p++ Substrate/ Collector
Thickness: NPT=100m
PT=400m
Fast IGBT Family .... Designated by the "GF" in the part number, these devices are designed for operation up to 40kHz in hard switching applications.
Thunderbolt IGBTTM Family .... Designated by the "GT" in the part number, these devices are designed for operation up to 150kHz hard switching and 300kHz in resonant applications.
14
NPT IGBT
BVCES Volts Max VCE(ON) Volts IC1 (25C) Amps IC2 Amps PD Watts Part Number Package DISCRETE (IGBT ONLY)
Fast
1200
3.0 3.2 2.5 2.5 2.5 2.5 2.5 3.5 3.2 3.2 2.5 2.5 2.5 2.5 2.5 2.5 2.7 2.5 3.4 2.7 3.4 2.7
22 32 17 25 31 40 58 25 32 52 25 31 40 58 80 116 75** 90 80 100** 80 100**
11 20 8 12 15 20 30 15 20 33 12 15 20 30 40 60 50 60 50 100 50 100
125 200 70 125 135 175 250 310 200 300 125 135 175 250 350 500 300 375 390 390 390 390
APT11GF120KR APT20GF120KR APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR APT15GF170BR APT20GF120BR APT33GF120BR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT50GF60BR APT60GT60JR APT50GF120B2R APT100GF60B2R APT50GF120LR APT100GF60LR
TO-220
Thunderbolt
600
*TO-220[K] TO-220
Fast
1700 1200 600
NEW
TO-247
TO-247
Thunderbolt
*TO-247[B]
600 600 1200 600
Fast
ISOTOP(R) T-MAXTM
TO-264
1200 600
TO-264
*TO-264[L]
COMBI (IGBT + FRED)
Fast
1200
Thunderbolt
3.0 3.2 2.5 2.5 3.2 2.7 3.2 2.7 3.4 3.4 3.4 2.7 2.5
22 32 30 55 52 80 52 80 60 75 100 140 90
11 20 15 30 33 50 33 50 40 50 60 100 60
125 200 125 200 300 300 300 300 390 460 520 390 375
APT11GF120BRD APT20GF120BRD TO-247 APT15GT60BRD APT30GT60BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD APT60GT60JRD 15
T-Max
600 1200 600 1200 600 1200
T-MAXTM TO-264
*T-MAXTM[B2]
E G C E
Fast
ISOTOP(R)
SO
2 T-
27
600 600
*ISOTOP(R)[J]
*Not to Scale
** IC1 limited by package
FRED Technology
FRED Technology .... Our proprietary platinum lifetime control process results in performance advantages vs FREDs built with alternative processes for lifetime control. Use of platinum produces a "softer" and faster recovery with an optimal trade-off between VF and trr. Improved High Temperature Operation .... The reverse recovery of silicon diodes degrades as operating temperatures increase. The advantage of using platinum for lifetime control is less degradation of performance at high temperatures. To assist the designer, trr is specified on all datasheets under operating conditions; i.e., at Tj = 125C, maximum rated current and dI/dt and 80% rated voltage.
CENTER-TAP DUAL FREDS
V RMM Volts 1000 IF(AV) Amps** 15 30 15 30 15 30 30 60 60 60 60 trr2(25C) nsec Typ 60 60 40 50 40 45 40 70 70 70 36 trr3(100C) VF(25C) nsec Typ Volts 120 120 80 80 70 70 60 130 90 90 71 2.3 2.3 1.8 1.8 1.5 1.5 1.15 2.5 1.8 1.5 1.15 IRM(25C) A 250 250 150 250 150 250 250 250 250 250 250 APT Part No. APT15D100BCT APT30D100BCT APT15D60BCT APT30D60BCT APT15D40BCT APT30D40BCT APT30D20BCT APT60D100LCT
TO
1
Package Style
TO
-24
7
600
400
2
3
200 1000 600 400 200
*TO-247[BCT] Common Cathode
APT60D60LCT APT60D40LCT APT60D20LCT
-26
4
*TO-264[LCT] Common Cathode
TO
-24
TO 7
CONSULT FACTORY FOR THESE OR OTHER PACKAGE CONFIGURATIONS
-24
7
1
1 2 3
Half Bridge 3or Phase Leg
16 *Not to Scale
2
**All Ratings Are Per Leg
DISCRETE FREDS
VRMM Volts 1200 1000 600 IF(AV) Amps 30 60 30 60 15 30 60 30 60 30 60 15 15 15 15 30 60 100 30 60 100 30 60 100 30 60 100 60 100 30 60 100 30 60 100 30 60 100 30 60 100 60 100 trr2(25C) nsec Typ 70 70 60 70 40 50 70 45 40 40 36 60 40 40 35 70 70 130 60 70 80 50 70 60 45 70 60 36 70 70 70 130 60 70 80 50 70 60 45 70 60 36 70 trr3(100C) VF(25C) nsec Typ Volts 160 130 120 130 80 80 90 70 65 60 71 120 80 70 60 160 130 215 120 130 160 80 90 92 70 90 140 71 150 160 130 215 120 130 160 80 90 92 70 90 140 71 150 2.5 2.5 2.3 2.5 1.8 1.8 1.8 1.5 1.5 1.15 1.15 2.3 1.8 1.5 1.4 2.5 2.5 2.5 2.3 2.5 2.5 1.8 1.8 2.0 1.5 1.5 1.5 1.15 1.1 2.5 2.5 25 2.3 2.5 2.5 1.8 1.8 2.0 1.5 1.5 1.5 1.15 1.1 17 IRM(25C) A 250 250 250 250 150 250 250 250 250 250 250 250 150 150 150 250 250 250 250 250 250 250 250 250 250 250 500 250 500 250 250 250 250 250 250 250 250 250 250 250 500 250 500 APT Part No. APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT30D20B APT60D20B APT15D100K
TO -22 0
Package Style
TO-247
400 200 1000 600 400 300 1200
*TO-247[B]
APT15D60K APT15D40K APT15D30K APT2X30D120J APT2X60D120J APT2X100D120J
A 1
*TO-220[K]
K
2 A
2
K2
A2
1000
600
400
200 1200
1000
600
400
200
APT2X30D100J K1 APT2X60D100J APT2X100D100J APT2X30D60J *ISOTOP(R)[J] APT2X60D60J Antiparallel Configuration APT2X100D60J (ISOLATED BASE) APT2X30D40J APT2X60D40J APT2X100D40J APT2X60D20J APT2X100D20J APT2X31D120J 2 APT2X61D120J K 1 K2 K1 K 7 APT2X101D120J 2 A 1 22 lel A T- l APT2X31D100J SO ara P APT2X61D100J A2 A1 APT2X101D100J APT2X31D60J *ISOTOP(R)[J] APT2X61D60J Parallel Configuration APT2X101D60J (ISOLATED BASE) APT2X31D40J APT2X61D40J APT2X101D40J APT2X61D20J APT2X101D20J *Not to Scale
7 el 1 22 ll K T- ara SO -P i nt A1 A
DISCRETE SURFACE MOUNT FREDS
V RMM Volts IF(AV) Amps trr2(25C) nsec Typ trr3(100C) nsec Typ VF(25C) Volts IRM(25C) A APT Part No. Package Style
600 400 200
30 30 30
50 45 40
80 70 60
1.8 1.5 1.15
250 250 250
APT30D60S
D3PAK
APT30D40S APT30D20S *D3 PAK[S]
Higher Frequency FREDs
Standard FRED[1] vs Higher Frequency FRED[2]
Extremely Fast Recovery .... These FREDs are capable of replacing GaAs rectifiers in high frequency applications up to 2 MHz, at a fraction of the cost. By using two (2), much heavier platinum doped 300V FREDs in series, a considerable decrease in the reverse recovery time is achieved vs standard 600V FREDs. This heavier concentration of platinum produces a FRED that is specifically designed for higher frequency applications where reduction of switching losses is most important and a higher VF specification can be tolerated.
[2]
[1]
ULTRAFAST SOFT RECOVERY DIODE PRODUCTS
HIGHER FREQUENCY FREDS
VRMM Volts 600 IF(AV) Amps 30 15 300 30 15 trr2(25C) nsec Typ 20 12.5 20 12.5 trr3(100C) VF(25C) nsec Typ Volts 35 25 35 25 4.0 4.0 2.0 2.0 18 IRM(25C) A 250 150 250 150 APT Part No. APT30DS60B
TO
Package Style
APT15DS60B APT30DS30B NEW APT15DS30B NEW
1 2
-24
7
*TO-247[B]
*Not to Scale
RF MOSFETs
RF Technology.... APT RF MOSFETs are optimized for high power Class C, D and E operation from 1100 MHz. The die geometry has been designed for RF high power efficiency and low gate loss. The RF MOSFETs are mounted on an isolation substrate to create a TO-247 common source configuration. The source is directly connected to the center pin and heatsink tab; no external insulator is necessary. This provides maximum thermal efficiency without the added expense and assembly problems of drain isolation. Internally, symmetric wire bonding schemes insure that both pinout versions of each device are perfect mirror image pairs. This configuration allows for easy layout of push-pull and parallel pairs for circuit board symmetry and separation of input and output sections. High Voltage Operation .... Historically, all RF MOSFETs operated at a maximum of 50V. By combining high voltage MOSFET technology with specific RF die geometries, this limitation has been removed. RF operation at up to 300V is now possible. Why Higher Voltage .... Higher operating voltage means higher load impedances. For 300W of RF output at 50V, the load is less than 4 ohms. At 125V, the load impedance is 25 ohms. The higher impedance allows for fewer transformers and combiners. Parallel devices can still operate into a reasonable and convenient load impedance. Increasing the operating voltage also lowers the current required for any given power output, reducing the size and weight of other components. Lower Cost .... * No insulators required * Maximum thermal efficiency. The internal BeO insulator is more efficient than external insulators. * Simplified board layout due to symmetric pairs configuration Note: The ARF446 through ARF450 devices are based on the latest MOS V(R) RF technology and are the preferred devices for all new designs. The ARF440 through ARF445 are based on Power MOS IV(R) technology and are not recommended for new designs.
RF MOSFETs
VDD Volts 50 POUT Watts 125 125 200 200 300 300 250 250 250 250 150 150 500 GPS dB(typ) 21 @ 13.56 MHz 21 @ 13.56 MHz 22 @ 13.56 MHz 22 @ 13.56 MHz 18.7 @ 13.56 MHz 18.7 @ 13.56 MHz 15 @ 40.68 MHz 15 @ 40.68 MHz 15 @ 40.68 MHz 15 @ 40.68 MHz 13 @ 81.36 MHz 13 @ 81.36 MHz 13 @ 81.36 MHz RqJC C/W 0.75 0.75 0.75 0.75 0.60 0.60 0.55 0.55 0.55 0.55 0.76 0.76 0.26 19 Pin Out Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 1 Figure 2 Figure 3 APT Part No. ARF440 ARF441 ARF442 ARF443 ARF444 ARF445 ARF446 ARF447 ARF448A ARF448B ARF449A ARF449B ARF450
NEW
Gate Source Drain
Figure 1
TO-247
100
300
Figure 2
TO-247
250
150
Drain Source Gate
*TO-247
Figure 3
150
150
*Not to Scale
HERMETIC MOSFET PRODUCTS
BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps PD Watts Ciss(pF) Typ Qg(nC) Typ APT Part No. Optional Surface Mount Pkg. Package Style 1000 4.000 3.3 100 805 35 APT1004RGN CoolPack1 *TO-257[G] (ISOLATED) 1000 2.000 4.000 600 500 0.450 0.320 0.400 0.415 400 0.300 0.315 5.5 3.6 11.8 14.0 13.0 12.0 15.0 14.0 150 125 150 150 150 150 150 150 1530 805 2600 2650 1430 2410 1500 2400 66 35 115 110 71 103 71 100 APT1002RCN APT1004RCN APT6045CVR APT5032CVR APT5040CNR 2N7228/JX/JV APT4030CNR 2N7227/JX/JV CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 *TO-254[C] (ISOLATED)
1000
0.88 1.10
11.0 9.0 13.5 11.5 20.0 15.5 24.0 18.5 28.0 22.0 45.0
250 200 250 200 250 200 250 200 250 200 250
3700 3050 3700 3050 4300 3450 4400 3600 4500 3350 5100
185 150 185 150 185 140 200 140 195 135 148
APT10088HVR APT1001R1HVR APT8058HVR APT8067HVR APT6027HVR APT6037HVR APT5019HVR APT5026HVR APT4014HVR APT4018HVR APT20M40HVR
CoolPack2 CoolPack1 CoolPack2 CoolPack1 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack2 *TO-258[H] (ISOLATED)
800
0.58 0.67
600
0.27 0.37
500
0.19 0.26
400
0.14 0.18
200
0.040
20
*Not to Scale
HERMETIC MOSFET PRODUCTS
BVDSS Volts 1000 800 600 RDS(ON) Ohms 1.10 0.65 0.32 0.35 500 0.22 0.24 0.30 400 300 100 0.15 0.090 0.030 ID(Cont.) Amps 9.0 11.5 17.5 16.0 21.0 18.5 14.7 25.5 33.0 65.0** PD Watts 200 200 235 200 235 200 155 235 235 235 Ciss(pF) Typ 3050 3050 3750 3450 3700 3600 2650 3600 4100 4300 Qg(nC) Typ 150 150 160 140 150 140 110 160 130 150 APT Part No. APT1001R1AVR APT8065AVR APT6032AVR APT6035AVR APT5022AVR APT5024AVR APT5030AVR APT4015AVR APT30M90AVR APT10M30AVR Surface Mount Pkg. CoolPack1 CoolPack1 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack1 CoolPack2 CoolPack2 CoolPack2 *TO-3[A] (NON-ISOLATED) Package Style
1000 600 500 400 200
0.57 0.17 0.12 0.082 0.026
17.3 31.5 40.0 44.0 65.0
450 450 450 450 450
6600 7500 7400 7410 8500
335 315 312 330 290
APT10057WVR APT6017WVR APT5012WVR APT40M82WVR APT20M26WVR
CoolPack3 CoolPack3 CoolPack3 CoolPack3 CoolPack3 *TO-267[W] (ISOLATED)
1000 600 500 400 200
0.250 0.075 0.05 0.035 0.013
33.0 60.5 74.5 89.0 146.0
625 625 625 625 625
15000 16500 16300 16000 18000
660 700 690 700 630
APT10025PVR APT60M75PVR APT50M50PVR APT40M35PVR APT20M13PVR *P-PACK (ISOLATED)
CONSULT FACTORY FOR INFORMATION ON FRED, FREDFET AND IGBTs IN ANY HERMETIC PACKAGE.
*CoolPackTM 1 .450X.625X.130 inches
*CoolPackTM 2 .550X.800X.145 inches
*CoolPackTM 3 .980X1.23X.145 inches
CONSULT FACTORY FOR INFORMATION ON SURFACE MOUNT PRODUCTS
CoolPackTM is a trademark of Microsemi Corporation
** IDmax limited by package
21
*Not to Scale
EW N
BVCES Volts
Max Vce (on) Volts 2.5 2.5 2.7 2.5 2.5 2.7 3.2 3.4
HERMETIC NPT IGBT MOSFET PRODUCTS
I C1 25C Amps I C2 Amps 20 30 50 20 30 50 33 50 PD Watts 175 250 300 175 250 300 300 300 APT Part No. APT20GT60AR APT30GT60AR APT50GF60AR APT20GT60CR APT30GT60CR APT50GF60HR APT33GF120HR APT50GF120HR Package 40 58 65** 35** 35** 65** 52 65** TO-3 [A] TO-254 [C]
bb
600
600 600 1200
TO-258 [H]
SEE PAGE 14 FOR TECHNOLOGY FEATURES AND BENEFITS
EW N
V RMM Volts IF(AV) Amps
HERMETIC FREDS
trr2(25C) nsec TYP trr3(100C) nsec TYP VF(25C) Volts IRM(25C) mA APT Part No. Configuration*** Package
600 400 300 600 400 200 600 400 200
15 15 15 30 60 30 60 30 60 30 30 30
40 40 35 50 70 45 40 40 36 50 45 40
80 70 60 80 90 70 65 60 71 80 70 60
2.0 1.7 1.6 2.0 2.0 1.7 1.7 1.4 1.5 2.0 1.7 1.4
150 150 150 250 250 250 250 250 250 250 250 250
APT15D60C APT15D40C APT15D30C APT30D60H APT60D60H APT30D40H APT60D40H APT30D20H APT60D20H APT30D60HCT APT30D40HCT APT30D20HCT
Discrete Discrete Discrete Discrete Discrete Discrete Discrete Discrete Discrete Center Tap Center Tap Center Tap
TO-254[C]
TO-258[H]
SEE PAGE 16 FOR TECHNOLOGY FEATURES AND BENEFITS ***Contact factory for other current, voltages, package availability and Half Bridge or Common Anode Configuration
EW N HERMETIC HIGHER FREQUENCY FREDS
VRMM Volts 600 300 IF(AV) Amps 30 15 30 15 trr2 (25C) nsec TYP trr3(100C) nsec TYP VF(25C) Volts IRM(25C) mA Part Number APT30DS60H APT15DS60H APT30DS30C APT15DS30C BENEFITS Package TO-258 [H] TO-254 [C] 20 35 4.0 250 12.5 25 4.0 150 20 35 2.0 250 12.5 25 2.0 150 SEE PAGE 18 FOR TECHNOLOGY FEATURES AND
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** IDmax limited by package
tic me hure r He roc W B NE ucts able il od Pr Ava
Hermetic Products
APT is a MIL-PRF-19500 certified supplier and can provide TX, TXV and space level processing. In addition to the MOSFETs shown in this catalog, other MOSFETs, FREDFETs, IGBTs, FREDs, or combinations of these products can be provided in hermetic packages. If you do not see the product you need, or if you have questions concerning processing capabilities or certification levels, please contact your local representative or APT directly.
Custom, Value-Added Solutions To Meet Your Specific Power Application Requirements
In addition to the broad line of leading edge products in this catalog, APT is dedicated to providing innovative solutions for our customers. This means working with our customers to solve their procurement, manufacturing or application problems. We are known as the supplier that provides solutions that others cannot, or will not, provide. These include, but are not limited to: * * * * * * * Custom products including special designs, processes, and packaging. Supply chain management requirements. Strategic inventories to allow for unexpected changes in demand. Special testing. Thermal and power management. Hi-Rel Testing/Screening Application Specific Power Modules (ASPM) where power semiconductors are combined with driver and protection circuits to meet your specific application requirements.
For additional information contact your local APT Representative or APT directly.
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APT USA 405 S. W. COLUMBIA STREET BEND, OR 97702 U.S.A. TEL: (541) 382-8028 or 1-800-522-0809 FAX: (541) 388-0364 http://www.advancedpower.com E-mail: custserv@advancedpower.com APT EUROPE CHEMIN DE MAGRET 33700 MERIGNAC - FRANCE TEL: (33) (0)5 57 92 15 15 FAX: (33) (0)5 56 47 97 61
SALES OFFICES EASTERN USA TEL: (978) 686-5352 FAX: (978) 686-5441 E-mail: rsmeast@advancedpower.com EUROPE TEL: 33-557 92 15 15 FAX: 33-556 47 97 61 E-mail: rsmeurope@advancedpower.com
ASIA, SOUTH AMERICA, AUSTRALIA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: rsmrow@advancedpower.com
WESTERN USA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: rsmwest@advancedpower.com
is a registered trademark of Advanced Power Technology, Inc.
(c) 1999
ISOTOP(R) is a registered trademark of SGS Thomson
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APT reserves the right to change, without notice, the specifications and information contained herein.

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