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| Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 MAXIMUM MAXIMUM Characteristic RATINGS Symbol VCEO VCBO VEBO Ic Rating 25 30 3.0 50 Unit Vdc Vdc Vdc mAdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous - THERMAL THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA=25 25 Derate above25 25 Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA 556 Unit mW mW/ /W TJ,Tstg -55to+150 DEVICE DEVICE MARKING MMBTH10=3EM Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 ELECTRICAL ELECTRICAL CHARACTERISTICS ) (TA=25 unless otherwise noted 25) =25 Characteristic Emitter Cutoff Current (VEB=2.0v,IC=0) Collector Cutoff Current (VCB=25v,IE=0) Collector-Base Breakdown Voltage (Ic=100uA) Collector-Emitter Breakdown Voltage (Ic=1mA) Emitter-Base Breakdown Voltage (IE=10uA) Collector Saturation Voltage (Ic=4mAdc,IB=0.4mA) DC Current Gain (VCE=10v,IC=4mA) Gain Bandwidth Product (VCE=10v,IC=4mA) Output Capacitance (VCB=10v,IE=0,f=1.0MHz) 1. FR-5=1.0x0.75x0.062in. 2. Alumina=0.4x0.3x0.024in.99.5%alumina. Symbol IEBO ICBO V(BR)CBO Min -- Typ -- Max 100 Unit nA -- -- 100 nA 30 -- -- V V(BR)CEO 25 -- -- V V(BR)EBO 3 -- -- V VCE(sat) -- -- 0.5 Vdc HFE 60 -- -- fT 650 -- -- MHz Cob -- -- 0.7 pF Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 DIMENSION DIMENSION (UNIT)mm |
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