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| CBR1F-D020S SERIES SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: (TA=25C unless otherwise specified) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40C) Peak Forward Surge Current Rating for Fusing (t<8.35ms) Operating and Storage Junction Temperature SYMBOL VRRM VR VR(RMS) IO IFSM I2t TJ, Tstg CBR1FD020S 200 200 140 CBR1FD040S 400 400 280 CBR1FD060S 600 600 420 1.0 50 3.74 -65 to +150 CBR1F- CBR1FD080S D100S 800 800 560 1000 1000 700 UNITS V V V A A A2s C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS TYP IR IR VF trr trr trr CJ VR=Rated VRRM VR=Rated VRRM, TA=125C IF=1.0A IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) IF=0.5A, IR=1.0A, Rec. to 0.25A (600V) IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) VR=4.0V, f=1.0MHz 25 MAX 5.0 0.5 1.3 200 300 500 UNITS A mA V ns ns ns pF R1 (4-January 2010) CBR1F-D020S SERIES SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-January 2010) w w w. c e n t r a l s e m i . c o m |
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