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UNISONIC TECHNOLOGIES CO., LTD 3N90
3 Amps, 900 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
Power MOSFET
FEATURES
* RDS(ON)=4.1 @VGS=10 V * Ultra Low Gate Charge ( typical 22.7 nC ) * Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R Package TO-220 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel
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3N90
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS V 900 Drain-Gate Voltage (RG=20k) VDGR V 900 Gate-Source Voltage VGSS 30 V Gate-Source Breakdown Voltage (IGS=1mA) BVGSO 30(MIN) V Insulation Withstand Voltage (DC) TO-220F VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 180 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/ TO-263 90 Power Dissipation PD W TO-220F 25 Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. starting TJ=25 C, ID=IAR, VDD=50V 4. ISD3A, di/dt200A/s, VDDBVDSS, TJTJ(MAX).
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case TO-220/ TO-263 TO-220F TO-220/ TO-263 TO-220F SYMBOL JA JC RATING 62.5 62.5 1.38 5 UNIT C/W C/W
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (Note 1) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance (Note 2) SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS COSS(EQ) tD(ON) tR tD(OFF) tF QG QGS QDD TEST CONDITIONS VGS=0V, ID=250A VDS=900V, VGS=0V VGS=30V, VDS=0V VDS=VGS, ID=250A VGS=10V, ID=1.5A VDS=15V, ID=1.5A MIN TYP MAX UNIT 900 1 10 3 3.75 4.1 2.1 590 63 13 34 18 7 45 18 22.7 4.2 12 4.5 4.8 V A A V S pF pF pF pF ns ns ns ns nC nC nC
VDS=25V, VGS=0V, f=1MHz VGS=0V, VDS=0V~400V VDD=450V, ID=1.5 A, RG=4.7 VGS=10V VDD=720V, ID=1.5 A, RG=4.7 VGS=10V VDD=720V, ID=3A, VGS=10V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3N90
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Reverse Recovery Current IRRM 8.7 A ISD=3A, di/dt=100A/s, Body Diode Reverse Recovery Time tRR 510 ns VDD=100V, TJ=25C 2.2 nC Body Diode Reverse Recovery Charge QRR Note: 1.Pulse width=300s, Duty cycle1.5% Note: 2.COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3N90
TEST CIRCUITS AND WAVEFORMS
D.U.T. + VDS + L
Power MOSFET
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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3N90
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
12V
50k 0.2F 0.3F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 3mA VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3N90
TYPICAL CHARACTERISTICS
300 250 Drain Current, ID (A) 200 150 100 50 0 0 400 600 200 800 1000 Drain-Source Breakdown Voltage, BVDSS(V) Drain Current, ID (A) Drain Current vs. Drain-Source Breakdown Voltage 300 250 200 150 100 50 0 0
Power MOSFET
Drain Current vs. Gate Threshold Voltage
1 2 5 3 4 Gate Threshold Voltage, VTH (V)
Drain Current, ID (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Source Current, IS (A)
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