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GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for up to 5kHz switching
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
VCES = 600V IC110 = 48A VCE(sat) 1.35V
TO-263 (IXGA)
G
Symbol
VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load @ 600V TC = 25C
Maximum Ratings
600 600 20 30 48 300 ICM = 96 300 -55 ... +150 150 -55 ... +150 V V V V A A A W C C C C C Nm/lb.in. g g g
G G C
E
(TAB)
TO-247 (IXGH)
(TAB) E
TO-220 (IXGP)
(TAB) C E
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-220) TO-247 TO-220 TO-263
300 260 1.13/10 6.0 3.0 2.5
G = Gate E = Emitter Features
C = Collector TAB = Collector
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Optimized for low conduction losses International standard packages Advantages High power density Low gate drive requirement Applications
Symbol Test Conditions
(TJ = 25C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 32A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values
Min. 600 3.0 5.0 Typ. Max. V V 25 A 250 A 100 nA 1.18 1.35 V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
(c) 2008 IXYS CORPORATION, All rights reserved
DS99581B(07/08)
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS (TO-247) (TO-220) 0.25 0.50 Inductive Load, TJ = 25C IC = 32A, VGE = 15V VCE = 480V, RG = 5 Inductive Load, TJ = 25C IC = 32A, VGE = 15V VCE = 480V, RG = 5 IC = 32A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 32A, VCE = 10V, Note 1
Characteristic Values Min. Typ. Max.
30 48 3190 175 43 110 21 42 25 30 0.95 334 224 2.90 24 30 1.97 545 380 5.60 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W C/W
TO-247 (IXGH) Outline
P
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-220 (IXGP) Outline
Note 1: Pulse test, t 300s; duty cycle, d 2%.
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TO-263 (IXGA) Outline
Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
Fig. 1. Output Characteristics @ 25C
70 60 50 VGE = 15V 13V 11V 330 300 270 240 11V VGE = 15V 13V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
210 180 150 120 90 60 30 7V 0 2 4 6 8 10 12 14 9V
40 30 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
9V
7V
0 1.4 1.6 1.8
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
70 60 50 VGE = 15V 13V 11V 1.4 1.3
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
= 64A
VCE(sat) - Normalized
1.2 1.1 I 1.0 0.9 0.8 0.7 I = 16A
C
IC - Amperes
9V 40 30 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 7V
= 32A
C
-50
-25
0
25
50
75
100
125
150
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
2.8 2.6 2.4 TJ = 25C 200 180 160
Fig. 6. Input Admittance
IC - Amperes
2.2
I
C
VCE - Volts
2.0 1.8 1.6 1.4 1.2 1.0 0.8 6 7 8
= 64A 32A 16A
140 120 100 80 60 40 20 0 TJ = 125C 25C - 40C
9
10
11
12
13
14
15
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
Fig. 7. Transconductance
70 60 50 TJ = - 40C 25C 125C 16 14 12 VCE = 300V I C = 32A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100
VGE - Volts
10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 110 120
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 100 90
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
Cies
80 70
IC - Amperes
1,000
60 50 40 30 20 TJ = 125C RG = 5 dV / dt < 10V / ns
Coes 100
f = 1 MHz
10 0
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Cres
10 0 100
5
10
15
20
25
30
35
40
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_48N60A3(56) 07-10-08-A
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
14 I 12 10 Eoff 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 VCE = 480V Eon C
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
7 13 Eoff 11 VCE = 480V Eon 6
= 64A 6 5
---5
RG = 5 , VGE = 15V
Eoff - MilliJoules
--4 I C = 32A 3 2 1 0
Eoff - MilliJoules
9
4
E
E
on
on
TJ = 125C , VGE = 15V
- MilliJoules
- MilliJoules
7 TJ = 125C
3
5
2
3 TJ = 25C 1 15 20 25 30 35 40 45 50 55 60 65
1
I C = 16A
0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
13 12 11 10 Eoff VCE = 480V Eon 6 520 500 5 I
C
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
850
---= 64A 4
tf
VCE = 480V I = 64A
td(off) - - - -
RG = 5 , VGE = 15V
TJ = 125C, VGE = 15V
800 750
480
t d(off) - Nanoseconds
Eoff - MilliJoules
9 8 7 6 5 4 3 2 1 25 35 45 55 65 75 85 95 I C = 16A 105 115 I C = 32A
t f - Nanoseconds
460 440 420 400 380
700 650
E - MilliJoules
on
C
3
16A 32A 16A 32A 64A
600 550 500 450 400
2
1 360 0 125 340 0
3
6
9
12
15
18
21
24
27
30
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
500 450 400 350 TJ = 125C 650 600 80
Fig. 17. Inductive Turn-on Switching Times vs. Junction Temperature
28 I C = 64A 70 60 50 40 I C = 32A 30 20 10 25 35 45 55 65 75 85 95 105 115 I
C
27
t f - Nanoseconds
t r - Nanoseconds
550 500
tr
VCE = 480V
td(on) - - - -
t d(off) - Nanoseconds
t d(on) - Nanoseconds
26 25 24 23
RG = 5 , VGE = 15V
tf
300 250 200 150 15 20 25
td(off) - - - 450 400 TJ = 25C 350 300 30 35 40 45 50 55 60 65
RG = 5 , VGE = 15V VCE = 480V
= 16A
22 21 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA48N60A3 IXGH48N60A3 IXGP48N60A3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
100 90 80 56 70 60 50 40 30 20 TJ = 125C 10 0 15 20 25 30 35 40 45 50 55 60 65 TJ = 25C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
28 27
tr
VCE = 480V
td(on) - - - -
TJ = 125C, VGE = 15V
52 48 44 I = 32A 40 36 32
25C < TJ < 125C
t
26 25 24 23
t
d(on)
d(on)
t r - Nanoseconds
70 60 50 40 30 20 10 12
I
C
= 64A
C
t r - Nanoseconds
- Nanoseconds
- Nanoseconds
tr
VCE = 480V
td(on) - - - 22 21
I
C
= 16A
28 24
RG = 5 , VGE = 15V
14
16
18
20
22
24
26
28
30
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-off Switching Times vs. Junction Temperature
480 650
tf
440 400 360 320 280 240 200 25 35 45 I
C
td(off) - - - 600
RG = 5 , VGE = 15V VCE = 480V
t
t f - Nanoseconds
550 = 64A, 32A, 16A 500 450 400 350 300 125
d(off)
- Nanoseconds
I
C
= 64A, 32A, 16A
55
65
75
85
95
105
115
TJ - Degrees Centigrade
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IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_48N60A3(56) 07-10-08-A

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