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IGBT
Optimized for switching up to 5KHz
Preliminary data sheet
IXGA 12N120A2 IXGP 12N120A2
VCES = 1200 V = 24 A IC25 VCE(sat) = 3.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 100 Clamped inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 24 12 48 ICM = 24 @ 0.8 VCES 75 -55 ... +150 150 -55 ... +150 300 W C C C C Features V V V V A A A A
G E C (TAB)
GC E
TO-220AB (IXGP)
TO-263 AA (IXGA)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md
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*International
standard packages
Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g
JEDEC TO-220AB and TO-263AA *Low VCE(sat) - for minimum on-state conduction losses - drive simplicity Applications
Weight
*MOS Gate turn-on
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 A, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15V
Characteristic Values Min. Typ. Max. 1200 2.5 TJ = 25C TJ = 125C 5.0 25 250 100 2.4 3.0 V V A A nA V
* AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode * Capacitor
power supplies discharge
Advantages
* Easy to mount with one screw * Reduces assembly time and cost * High power density
(c) 2004 IXYS All rights reserved
DS99199(8/04)
IXGA12N120A2 IXGP12N120A2
TO-220 AB Dimensions Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 100 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 100 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90 VCE = 10 V Pulse test, t 300 s, duty cycle 2 % VGE = 10 V, VCE = 10V 35 530 30 4 24 5.5 8.8 15 30 680 1000 650 1000 5.4 15 30 0.5 700 1050 7.7 1.66 9.0 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline
Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side
Characteristic Values Min. Typ. Max. 4.0 7.8 S
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1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side
Min. Recommended Footprint (Dimensions in inches and mm)
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXGA12N120A2 IXGP12N120A2
Fig. 1. Output Characteristics @ 25 C
24 22 20 18 VGE = 15V 13V 11V 70 60 50 VGE = 15V 13V
Fig. 2. Extended Output Characteristics @ 25 C
I C - Amperes
14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3
I C - Amperes
16
9V
11V 40 30 20 7V 10 9V
7V
5V 0 3.5 4 4.5 5 0 5 10
5V 15 20 25 30
V C E - Volts Fig. 3. Output Characteristics @ 125 C
24 22 20 18 VGE = 15V 13V 11V 1.7 1.6 1.5 VGE = 15V
V C E - Volts Fig. 4. Dependence of V CE(sat) on Tem perature
VC E (sat)- Normalized
I C = 24A
I C - Amperes
16 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 5V 7V 9V
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 I C = 6A I C = 12A
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V CE - Volts
4
4.5
5
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
8 7 6 I C = 24A TJ = 25C 24 21 18
Fig. 6. Input Adm ittance
I C - Amperes
VC E - Volts
5 4 3 2 1 6 7 8 9
12A 6A
15 12 9 6 3 0 TJ = 125C 25C -40C
V G E - Volts
10
11
12
13
14
15
16
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
V G E - Volts
(c) 2004 IXYS All rights reserved
IXGA12N120A2 IXGP12N120A2
Fig. 7. Transconductance
11 10 9 18 16 14 I C = 24A TJ = 25C VGE = 15V VCE = 960V I C = 12A
Fig. 8. Dependence of Turn-off Energy Loss on RG
E o f f - milliJoules
8
g f s - Siemens
7 6 5 4 3 2 1 0 0 3 6 9 12 15 18 21 24 27 TJ = -40C 25C 125C
12 10 8 6 4 2 0 0
I C = 6A
200
400
600
800
1000
I C - Amperes Fig. 9. Dependence of Turn-Off Energy Loss on IC
16 14 12 10 8 6 4 2 0 6
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R G - Ohms Fig. 10. Dependence of Turn-off
3 2.7
Delay Tim e on RG
VGE = 15V VCE = 960V TJ = 25C I C = 6A 12A 24A
R G =100
t d ( o f f ) - microseconds
VGE = 15V
E o f f - MilliJoules
VCE = 960V TJ = 25C
2.4 2.1 1.8 1.5 1.2 0.9 0.6
9
12
I C - Amperes
15
18
21
24
0
200
R G - Ohms
400
600
800
1000
Fig. 11. Dependence of Turn-off
0.80 0.75
Fig. 12. Dependence of Turn-off
0.85
Current Fall Tim e on RG
I C = 24A
Sw itching Tim e on IC
t f i - microseconds
0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0 200 I C = 6A I C = 12A VGE = 15V VCE = 960V TJ = 25C
Switching Time -microseconds
0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45
td(off) tfi - - - - R G = 100 VGE = 15V VCE = 960V TJ = 25C 6 8 10 12 14 16 18 20 22 24
R G - Ohms
400
600
800
1000
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA12N120A2 IXGP12N120A2
Fig. 13. Gate Charge
16 14 12 10 8 6 4 2 0 0 2 4 6 5 VCE = 600V IC=1 2A 30
Fig. 14. Reverse-Bias Safe Operating Area
25
I C - Amperes
I G= 1 0mA
20
VG E - Volts
15 10
TJ = 125C R G = 100 dV/dT < 10V/ns
0
Q G - nanoCoulombs
8
10
12
14
16
18
20
22
24
100
300
500
700
900
1100
1300
V C E - Volts
Fig. 15. Capacitance
1000
C ies
Capacitance - p F
100 C oes
10 C res f = 1 MHz 1 0 5 10 15 20 25 30 35 40
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V C E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
10.00
R ( t h ) J C - C / W
1.00
0.10 0.1 1
Pulse Width - milliseconds
10
100
1000
(c) 2004 IXYS All rights reserved

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