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 HA13158A
34 W x 4-Channel BTL Power IC
ADE-207-263A (Z) 2nd Edition Jul. 1999 Description
The HA13158A is four-channel BTL amplifier IC designed for car audio, featuring high output and low distortion, and applicable to digital audio equipment. It provides 34 W output per channel, with a 13.7 V power supply and at Max distortion.
Functions
* * * * 4 ch BTL power amplifiers Built-in standby circuit Built-in muting circuit Built-in protection circuit (surge, T.S.D and ASO)
Features
* * * * * * * Low power dissipation Soft thermal limiter Requires few external parts (C:3, R:1) Popping noise minimized Low output noise Built-in high reliability protection circuit Pin to pin with HA13153A/HA13154A/HA13155/HA13157/HA13158
HA13158A
Block Diagram
C2 0.1 /16 V C1 4400 /16 V 14 2 1 STBY IN-1 Buffer & Mute-1
Amp-1
VCC 13.2 V
18 PVCC2
6 PVCC1 3 4 5
IN VCC
7 IN-2 11 Buffer & Mute-2
Amp-2
8 9
15 IN-3 13 Buffer & Mute-3
Amp-3
16 17
19 IN-4 23 MUTE 10 R1 7.5 k Buffer & Mute-4 Protector (ASO, Surge, TSD) 12 C3 10 /10 V 22 TAB Unit R: C: F
Amp-4
20 21
Notes: 1. Standby Power is turned on when a signal of 3.5 V or 0.05 mA is impressed at pin 2. When pin 2 is open or connected to GND, standby is turned on (output off). 2. Muting Muting is turned off (output on) when a signal of 3.5 V or 0.2 mA is impressed at pin 10. When pin 10 is open or connected to GND, muting is turned on (output off). 3. TAB (header of IC) connected to GND.
5V
2
37.5 k 23.5 k
Q1 ON BIAS ON
5V
10
25 k
Q2 ON MUTE ON
2
HA13158A
Absolute Maximum Ratings
Item Operating supply voltage Supply voltage when no signal* Peak supply voltage* Output current*
3 4 2 1
Symbol VCC VCC (DC) VCC (PEAK) I O (PEAK) PT Tj Topr Tstg
Rating 18 26 50 4 83 150 -30 to +85 -55 to +125
Unit V V V A W C C C
Power dissipation*
Junction temperature Operating temperature Storage temperature Note: 1. 2. 3. 4.
Tolerance within 30 seconds. Tolerance in surge pulse waveform. Value per 1 channel. Value when attached on the infinite heat sink plate at Ta = 25 C. The derating carve is as shown in the graph below.
100 83 W A: When heat sink is infinite (j-a = 1.5C/W) B: When f (thermal resistance of heat sink) = 3C/W (j-a = 4.5C/W)
Power dissipation PT (W)
A
50
28 W B
0
25
50
85
100 (C)
150
Ambient temperature Ta
3
HA13158A
Electrical Characteristics (VCC = 13.2 V, f = 1 kHz, RL = 4 , Rg = 600 , Ta = 25C)
Item Quiescent current Output offset voltage Gain Gain difference between channels Rated output power Max output power Total harmonic distortion Output noise voltage Ripple rejection Channel cross talk Input impedance Standby current Standby control voltage (high) Standby control voltage (low) Muting control voltage (high) Muting control voltage (low) Muting attenuation Symbol I Q1 VQ GV GV PO POMAX T.H.D. WBN SVR C.T. Rin I Q2 VSTH VSTL VMH VML ATTM Min -- -180 30.5 -1.0 -- -- -- -- -- -- -- -- 3.5 0 3.5 0 -- Typ 220 0 32 0 20 34 0.03 0.15 55 70 25 -- -- -- -- -- 70 Max -- +180 33.5 +1.0 -- -- -- -- -- -- -- 10 VCC 1.5 VCC 1.5 -- Unit mA mV dB dB W W % mVrms dB dB k A V V V V dB Vout = 0 dBm VCC = 13.2 V, THD = 10%, RL = 4 VCC = 13.7 V, RL = 4 Po = 3 W Rg = 0 , BW = 20 to 20 kHz f = 120 Hz Vout = 0 dBm Test Conditions Vin = 0
4
HA13158A
Pin Explanation
Pin No. 1 Symbol IN1 Functions CH1 INPUT Input Impedance 25 k (Typ) DC Voltage 0V 1 25 k 11 13 23 2 IN2 IN3 IN4 STBY CH2 INPUT CH3 INPUT CH4 INPUT Standby control 90 k (at Trs. cutoff) -- 2 23.5 k 37.5 k Equivalence Circuit
3
OUT1 (+)
CH1 OUTPUT
--
VCC/2 3
5 7 9 15 17 19 21 10
OUT1 (-) OUT2 (+) OUT2 (-) OUT3 (+) OUT3 (-) OUT4 (+) OUT4 (-) MUTE Muting control 25 k (Typ) -- 10 25 k CH4 OUTPUT CH3 OUTPUT CH2 OUTPUT
22
RIPPLE
Bias stability
--
VCC/2 22
5
HA13158A
Pin Explanation (cont)
Pin No. 6 18 14 4 8 16 20 12 Symbol PVCC1 PVCC2 INVCC CH1 GND CH2 GND CH3 GND CH4 GND IN GND Power of input stage CH1 power GND CH2 power GND CH3 power GND CH4 power GND Input signal GND -- -- -- -- -- VCC -- -- -- Functions Power of output stage Input Impedance -- DC Voltage VCC Equivalence Circuit --
6
HA13158A
Point of Application Board Design
1. Notes on Application Board's Pattern Design * For increasing stability, the connected line of VCC and OUTGND is better to be made wider and lower impedance. * For increasing stability, it is better to place the capacitor between VCC and GND (0.1 F) close to IC. * It is better to place the grounding of resistor (Rg), between input line and ground, close to INGND (Pin 12) because if OUTGND is connected to the line between Rg and INGND, THD will become worse due to current from OUTGND.
0.1 F 6 3 1 Rg 12 4 5 VCC
Figure 1 Notes on Application Board's Pattern Design 2. How to Reduce the Popping Noise by Muting Circuit At normal operating circuit, Muting circuit operates at high speed under 1 s. In case popping noise becomes a problem, it is possible to reduce the popping noise by connecting capacitor, which determines the switching time constant, between pin 10 and GND. (Following figure 2) We recommend value of capacitor greater then 1 F. Also transitional popping noise can be reduced sharply by muting before VCC and Standby are ON/OFF.
5V 0V 7.5 k 10 4.7 F Muting control
Figure 2 How to use Muting Circuit Table 1
C (F) nothing 0.47 4.7
Muting ON/OFF Time
ON Time under 1 s 2 ms 19 ms OFF Time under 1 s 2 ms 19 ms
7
HA13158A
Characteristic Curves
Quiescent current vs. Supply Voltage 400 RL =
Quiescent current IQ (mA)
300
200
100
0
0
8
10
12
14
16
18
20
Supply Voltage VCC (V)
Output Power vs. Supply Voltage 60 RL = 4 , f = 1 kHz, 4ch operation
s)
Output Power Po, Pomax (W)
50
= 4 Vr m
40
ax om P
i (V
n
30
=1 0% )
20
Po
(TH
D
10
0
0
8
10
12
14
16
18
20
Supply Voltage VCC (V)
8
HA13158A
Total Harmonic Distortion vs. Frequency 5 Total Harmonic Distortion THD (%) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 20 50 100 200 500 1k 2k 5k 10k 20k VCC = 13.2 V, RL = 4 , 80 kHz L.P.F ON Po = 1.5 W Po = 8 W
Frequency f (Hz)
Total Harmonic Distortion vs. Output Power 10 5 Total Harmonic Distortion THD (%) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 30 VCC = 13.2 V, RL = 4 , 80 kHz L.P.F ON f = 100 Hz f = 1 kHz f = 10 kHz
Output Power Po (W)
9
HA13158A
Crosstalk vs. Frequency (1) 80 70 60 Crosstalk CT (dB) 50 40 30 20 10 0 20 VCC = 13.2 V, Vout = 0 dBm, 80 kHz L.P.F, Input Ch1 Ch2 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k 20k
Frequency f (Hz)
Crosstalk vs. Frequency (2) 80 70 60 Crosstalk CT (dB) 50 40 30 20 10 0 20 VCC = 13.2 V, Vout = 0 dBm, 80 kHz L.P.F, Input Ch2 Ch1 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k 20k
Frequency f (Hz)
10
HA13158A
Crosstalk vs. Frequency (3) 80 70 60 Crosstalk CT (dB) 50 40 30 20 10 0 20 VCC = 13.2 V, Vout = 0 dBm, 80 kHz L.P.F, Input Ch3 Ch1 Ch2 Ch4 50 100 200 500 1k 2k 5k 10k 20k
Frequency f (Hz)
Crosstalk vs. Frequency (4) 80 70 60 Crosstalk CT (dB) 50 40 30 20 10 0 20 VCC = 13.2 V, Vout = 0 dBm, 80 kHz L.P.F, Input Ch4 Ch1 Ch2 Ch3 50 100 200 500 1k 2k 5k 10k 20k
Frequency f (Hz)
11
HA13158A
Supply Voltage Rejection Ratio vs. Frequency 80 Supply Voltage Rejection Ratio SVR (dB) 70 60 50 40 30 20 10 0 20 VCC = 13.2 V, RL = 4 , Vripple = 0 dBm, 80 kHz L.P.F ON Ch1 Ch2 Ch3 Ch4 50 100 200 500 1k 2k 5k 10k 20k
Frequency f (Hz)
Wide Band Noise vs. Signal Source Resistance 5 2 Wide Band Noise WBN (mV) 1 0.5 0.2 0.1 0.05 0.02 0.01 20 50 100 200 500 1k 2k 5k 10k 20k 50k Mute ON (Ch1--Ch4) Mute OFF (Ch1--Ch4) VCC = 13.2 V, RL = 4 , Vin = 0
Signal Source Resistance Rg ()
12
HA13158A
Power Dissipation vs. Output Power 100 50 Power Dissipation PT (W) RL = 4 , f = 1 kHz, 1ch operation VCC = 13.2 V VCC = 14.4 V VCC = 16 V
20 10 5
2 1 0.02
0.05 0.1 0.2
0.5
1
2
5
10
20 30
Output Power Po (W)
Power Dissipation vs. Frequency 15
Power Dissipation PT (W)
10
5
VCC = 13.2 V, RL = 4 , Po = 10 W, 1ch operation 0 20 50 100 200 500 1k 2k 5k 10k 20k
Frequency f (Hz)
13
HA13158A
Package Dimensions
Unit: mm
30.18 0.25 19.81 4.32 0.05
3.80 0.05
4.50 0.12
0.05 1.55 + 0.1 -
17.50 0.13
3.80 0.05
2 - R1.84 0.19
10.70 0.12
2.79
1 1.12 0.70 +0.09 -0.1 0.25 M 27.94 1.27
23
5.08 4.29
Hitachi Code JEDEC EIAJ Weight (reference value)
SP-23TE Conforms -- 8.5 g
14
4.14 0.33
0.06 0.40 + 0.04 -
17.78 0.25
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.


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