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| CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4.0 AMP, 200 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CS39-4B series type is a hermetically sealed silicon controlled rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10s) Average Gate Power Dissipation Peak Gate Current (tp=10s) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IGM Tstg TJ JA JC CS39 -4B 200 CS39 -4D 400 4.0 35 4.5 3.0 0.2 1.2 -40 to +150 -40 to +125 180 10 CS39 CS39 -4M -4N 600 800 UNITS V A A A2 s W W A C C C/W C/W ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM, RGK=1K Rated VDRM, VDRM, RGK=1K, TC=125C VD=12V, RL =10 IT=50mA, RGK=1K VD=12V, RL =10 ITM=8.0A, tp=380s VD=2 /3 VDRM, RGK=1K, TC=125C 10 TYP MAX 5.0 200 UNITS A A A mA V V V/s 38 0.25 0.55 1.6 200 5.0 0.8 1.95 R2 (18-August 2004) Central TM Semiconductor Corp. CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4.0 AMP, 200 THRU 800 VOLTS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) GATE 3) ANODE MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8.51 C 0.040 1.02 D 0.240 0.260 6.10 6.60 E 0.500 12.70 F (DIA) 0.016 0.021 0.41 0.53 G (DIA) 0.200 5.08 H 0.100 2.54 I 0.028 0.034 0.71 0.86 J 0.029 0.045 0.74 1.14 TO-39 (REV: R1) R2 (18-August 2004) |
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