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| Chip Silicon Rectifier HFM101-M THRU HFM107-M Ultra fast recovery type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) 0.071(1.8) 0.055(1.4) 0.110(2.8) 0.094(2.4) Mechanical data Case : Molded plastic, JEDEC SOD-123 / MINI SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.04 gram 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 150 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 42 20 C/w pF +150 o C SYMBOLS MARKING CODE H1 H2 H3 H4 H5 H6 H7 V RRM (V) *1 V RMS (V) 35 70 140 210 280 420 560 *2 VR *3 VF *4 T RR *5 Operating temperature ( o C) (V) 50 100 200 300 400 600 800 (V) (nS) HFM101-M HFM102-M HFM103-M HFM104-M HFM105-M HFM106-M HFM107-M 50 100 200 300 400 600 800 1.0 50 -55 to +150 1.3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.7 75 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101-M THRU HFM107-M) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 1-M ~H FM 10 3-M FM 10 5-M INSTANTANEOUS FORWARD CURRENT,(A) HF M1 0 4-M ~H HF M1 0 1.0 .1 Tj=25 C Pulse Width 300us 1% Duty Cycle H FM 10 6M ~H FM 10 7- M 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 24 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 120 100 80 60 40 20 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) |
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