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| SUP18N15-95 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET www..com FEATURES rDS(on) (W) 0.095 @ VGS = 10 V PRODUCT SUMMARY VDS (V) 150 ID (A) 18 17.5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D 42-V Automotive Bus 0.100 @ VGS = 6 V TO-220AB D G DRAIN connected to TAB GDS Top View S N-Channel MOSFET SUP18N15-95 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 150 "20 18 10.3 25 15 16.2 88b -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (Free Air) Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. Document Number: 71642 S-04093--Rev. A, 25-Jun-01 www.vishay.com Symbol RthJA RthJC Limit 85 1.7 Unit _C/W _ 1 SUP18N15-95 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) www..com Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C VDS = 120 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 15 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 6 V, ID = 10 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 0.081 25 25 0.077 0.095 0.190 0.250 0.100 S W 150 V 2 "100 1 50 250 A m mA nA Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 75 V, RL = 5 W ID ^ 15 A, VGEN = 10 V, RG = 2.5 W VDS = 75 V, VGS = 10 V, ID = 15 A VGS = 0 V, VDS = 25 V, f = 1 MHz 900 115 70 20 5.5 7 8 35 17 30 12 55 25 45 ns 25 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 15 A, di/dt = 100 A/ms m IF = 15 A, VGS = 0 V 0.9 55 5 0.13 15 A 25 1.5 85 8 0.34 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Guaranteed by design, not subject to production testing. b. Independent of operating temperature. www.vishay.com 2 Document Number: 71642 S-04093--Rev. A, 25-Jun-01 SUP18N15-95 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 Vishay Siliconix Transfer Characteristics www..com 15 5V 10 15 10 TC = 125_C 5 25_C -55_C 0 5 3V 0 0 2 4 6 8 10 4V 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 40 TC = -55_C 0.12 32 g fs - Transconductance (S) r DS(on)- On-Resistance ( W ) 25_C 0.10 0.14 On-Resistance vs. Drain Current VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 24 125_C 16 8 0 0 5 10 15 20 25 0 5 10 15 20 25 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1500 20 Gate Charge 1200 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 16 VDS = 75 V ID = 15 A 900 12 600 8 300 Crss Coss 4 0 0 20 40 60 80 100 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71642 S-04093--Rev. A, 25-Jun-01 www.vishay.com 3 SUP18N15-95 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature www..com 2.4 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 1.6 1.2 0.8 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 VGS = 10 V ID = 15 A I S - Source Current (A) 2.8 100 Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 185 180 175 (V) 170 165 160 155 150 145 -50 V (BR)DSS -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71642 S-04093--Rev. A, 25-Jun-01 SUP18N15-95 New Product THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 20 100 Vishay Siliconix Safe Operating Area www..com Limited by rDS(on) I D - Drain Current (A) 10 10 ms 100 ms 15 I D - Drain Current (A) 10 1 TC = 25_C Single Pulse 1 ms 10 ms 100 ms 1 s, dc 5 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71642 S-04093--Rev. A, 25-Jun-01 www.vishay.com 5 |
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