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High Voltage IGBT
( Electrically Isolated Tab)
IXGF32N170
VCES IC110 VCE(sat) tfi(typ)
= = =
1700V 19A 3.5V 250ns
ISOPLUS i4-PakTM Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc PC TJ TJM Tstg TL TSOLD FC VISOL Weight 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 minute Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 2.7 Clamped Inductive Load TC = 125C, VCE = 1200V, VGE = 15V, RG = 10 TC = 25C Maximum Ratings 1700 20 30 44 19 200 ICM = 70 @ 0.8 * VCES 10 200 -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 2500 5 s W C C C C C Nm/lb.in. V~ g Features Electrically Isolated Tab High Current Handling Capability Rugged NPT Structure Molding Epoxies Meet UL 94 V-0 Flammability Classification Applications Capacitor Discharge & Pulser Circuits AC Motor Drives Uninterruptible Power Supplies (UPS) Switched-Mode and Resonant-Mode Power Supplies Advantages High Power Density Suitable for Surface Mounting V V V A A A A
1 = Gate 2 = Emitter 5 = Collector 1 2 5 ISOLATED TAB
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1mA, VGE = 0V = 250A, VCE = VGE
Characteristic Values Min. Typ. Max. 1700 3.0 5.0 V V
VCE = 0.8 * VCES, VGE= 0V, Note 2 TJ = 125C VCE = 0V, VGE = 20V IC = 32A, VGE = 15V, Note 1 TJ = 125C 2.7 3.3
50 A 1 mA 100 3.5 nA V V
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS99569B(5/09)
IXGF32N170
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eoff td(off) tfi Eoff RthJC RthCS RthJA Inductive load, TJ = 125C IC = 32A, VGE = 15V VCE = 0.6 * VCES, RG = 2.7 Inductive load, TJ = 25C IC = 32A, VGE = 15V VCE = 0.6 * VCES, RG = 2.7 IC = 32A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 32A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 20 30 4290 167 47 146 28 52 45 38 270 250 10.6 48 42 6.0 360 560 13.5 0.15 30 500 500 20 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 C/W C/W C/W ISOPLUS i4-PakTM (HV) (IXGF) Outline
Notes: 1. Pulse test, t < 300s; duty cycle, d < 2%.
2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGF32N170
Fig. 1. Output Characteristics @ 25C
64 56 48 VGE = 17V 15V 13V 11V 240 210 180 9V VGE = 17V 15V
Fig. 2. Extended Output Characteristics @ 25C
13V
I C - Amperes
I C - Amperes
40 32 24 16
150 120 90 60 9V 7V 11V
7V 8 0 0.5 1.0 1.5 2.0 2.5
E
30 0 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8
E
10
12
14
VC
- Volts
VC
- Volts
Fig. 3. Output Characteristics @ 125C
64 56 48 VGE = 17V 15V 13V 11V 1.8 1.6
Fig. 4. Dependence of VCE(sat) on Temperature
VGE = 15V IC = 64A 1.4 1.2 1.0 0.8 0.6 IC = 32A
I C - Amperes
40 32 24 16 8 0 0 1 2 3 4
9V
7V
V C E (sat)- Normalized
IC = 16A
5
6
-50
-25
0
25
50
75
100
125
150
VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage
8 7 6 TJ = 25C 100 90 80
TJ - Degrees Centigrade
Fig. 6. Input Admittance
I C - Amperes
70 60 50 40 30 20 TJ = 125C 25C - 40C
VC E - Volts
5 4
IC = 64A
32A 3 2 1 6 7 8 9 10 11 12 13 14 15 16 17
16A
10 0 4 5 6 7 8 9 10
VG E - Volts
VG E - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_32N170 (7N)7-10-08-A
IXGF32N170
Fig. 7. Transconductance
45 40 35 TJ = - 40C 25C 16 14 12 VCE = 850V IC = 32A IG = 10mA
Fig. 8. Gate Charge
g f s - Siemens
30 25 20 15 10 5 0
0 10 20 30 40 50 60
VG E - Volts
125C
10 8 6 4 2 0
70
80
90
100
0
20
40
60
80
100
120
140
160
I
C
- Amperes
Q
G
- nanoCoulombs
Fig. 9. Capacitance
10000
25 23
Fig. 10. Dependence of Eoff on RG
Cies
Capacitance - p F
21
1000 Coes 100
E off - milliJoules
IC = 64A TJ = 125C VGE = 1 5V VCE = 1 0 2 0V IC = 32A
19 17 15 13 11 9 0
f = 1 MHz
10 0 5 10 15 20
E
Cres 25 30 35 40
IC = 16A
5 10 15 20 25 30 35 40 45 50
VC
- Volts
R
G
- Ohms
Fig. 11. Dependence of Eoff on I C
22 20 R G = 2.7 R G= 1 5 24 22
Fig. 12. Dependence of Eoff on Temperature
R G = 2.7 R G= 1 5 IC = 64A
---E off - milliJoules
TJ = 125C
----
E off - MilliJoules
18 16 14 12 10 8 16
VGE = 1 5V VGE = 1 0 2 0V
20 18 16 14 12 10 8 6
VGE = 15V VGE = 10 2 0V IC = 32A
TJ = 25C
IC = 16A
20
24
28
32
36
C
40
44
48
52
56
60
64
I
- Amperes
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGF32N170
Fig. 13. Maximum Transient Thermal Impedance
1.00
Z (th) J C - (C/W)
0.10
0.01
0.00 0.00001 0.0001 0.001
Pulse Width - Seconds
0.01
0.1
1
10
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_32N170 (7N)7-10-08-A

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