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STD30NF06L
N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFETTM POWER MOSFET
TYPE STD30NF06L
s s s s
VDSS 60 V
RDS(on) <0.028
ID 35 A
s s
TYPICAL RDS(on) = 0.022 EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL ADD SUFFIX "-1" FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS
3 2 1
3 1
IPAK
DPAK
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE
Symbol VDS VDGR VGS ID ID
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ABSOLUTE MAXIMUM RATINGS
Parameter Value 60 60 20 35 25 140 70 0.46 25 - 55 to 175
(1) ISD 38A, di/dt 400A/s, V DD V(BR)DSS , Tj TJMAX.
Unit V V V A A A W W/C V/ns C
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dv/dt (1) Tstg
(q) Pulse width limited by safe operating area
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Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature
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STD30NF06L
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.14 100 275 C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 35 150 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20 V Min. 60 1 10 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 A VGS = 5 V, ID = 18 A VGS = 10 V, ID = 18 A Min. 1 Typ. 1.7 0.025 0.022 Max. 2.5 0.03 0.028 Unit V
DYNAMIC
Symbol Parameter Test Conditions VDS > =15 V , ID =15 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 25 1600 215 60 Max. Unit S pF pF pF
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Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
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STD30NF06L
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V, ID = 18 A RG = 4.7 VGS = 4.5 V (see test circuit, Figure 3) VDD = 48 V, ID = 38 A, VGS = 5 V Min. Typ. 30 105 23 7 10 31 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 30 V, ID = 18 A, RG = 4.7, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 65 25 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 35 A, VGS = 0 ISD = 38 A, di/dt = 100 A/s, VDD = 15 V, Tj = 150C (see test circuit, Figure 5) 70 140 4 Test Conditions Min. Typ. Max. 35 140 1.5 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Normalized Thermal Impedence
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STD30NF06L
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STD30NF06L
Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs Temperature
Source-drain Diode Forward Characteristics
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STD30NF06L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STD30NF06L
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
A
C C2
L2 D
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B6
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B5
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
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STD30NF06L
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F mm MIN. 6.8 10.4 1.5 MAX. 7 10.6 1.6 1.85 7.6 2.75 4.1 8.1 2.1
16.3
BASE QTY 2500
inch MIN. MAX. 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
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1.5 1.65 7.4 3.9 7.9 1.9 40 15.7 2.55
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STD30NF06L
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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