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| CYStech Electronics Corp. www..com Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN3501I3 * Low VCE(sat) * High BVCEO * Excellent current gain characteristics Features Symbol BTN3501I3 Outline TO-251 BBase CCollector EEmitter BCE BC Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25 Power Dissipation @ TC=25 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw380s,Duty2%. BTN3501I3 CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP IB PD PD RJA RJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W C/W C/W C C CYStech Electronics Corp. www..com Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 Page No. : 2/4 Characteristics (Ta=25C) Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 80 200 200 100 Typ. 0.1 50 130 Max. 10 50 0.3 0.6 1.5 1.2 1.5 400 Unit V A A V V V V V MHz pF Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=200mA IC=8A, IB=400mA IC=5A, IB=50m A IC=2A, IB=200mA IC=8A, IB=800mA VCE=1V, IC=100mA VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification of VCE(sat) 3 Rank Range KA < 360mV KB 350mV~900mV N 800mV~1500mV BTN3501I3 CYStek Product Specification CYStech Electronics Corp. www..com Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current 1000 VCE = 5V Saturation Voltage vs Collector Current 1000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE 100 IC = 40IB 100 VCE = 2V VCE = 1V 10 IC = 10IB IC = 20IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Power Dissipation---PD(W) VBE(SAT) @ IC =10IB Power Derating Curve 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA() 200 Saturation Voltage---(mV) 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve 25 Power Dissipation---PD(W) 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC() BTN3501I3 CYStek Product Specification CYStech Electronics Corp. www..com Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2004.06.17 Page No. : 4/4 TO-251 Dimension A B C D Marking: N3501 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3501I3 CYStek Product Specification |
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