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SUP/SUB75N08-09L
New Product
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.009 @ VGS = 10 V 0.011 @ VGS = 4.5 V
ID (A)
"75 a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP75N08-09L DS S N-Channel MOSFET
Top View SUB75N08-09L
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
75 "20 "75a "66 "240 "75 280 250c 3.7 -55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70870 S-60951--Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 (TO-263)d RthJA RthJC
Symbol
Limit
40 62.5 0.6
Unit
_C/W
2-1
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SUP/SUB75N08-09L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0076 0.009 0.011 0.016 0.021 S W 75 V 1 3 "100 1 50 250 A mA A nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 5600 820 275 121 20 25 11 VDD = 30 V, RL = 0 47 W V, 0.47 ID ^ 75 A, VGEN = 10 V RG = 2 5 W A V, 2.5 10 107 22 20 20 ns 200 40 150 nC C pF F
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Qgs VDS = 30 V, VGS = 10 V ID = 75 A V V, Qgd td(on) tr td(off) tf
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A di/dt = 100 A/ms A, IF = 75 A, VGS = 0 V 1.0 80 4 0.32 75 A 240 1.3 120 9 0.54 V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 70870 S-60951--Rev. A, 26-Apr-99
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SUP/SUB75N08-09L
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10, 9, 8, 7, 6, 5 V 4V 150 I D - Drain Current (A) 200
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Transfer Characteristics
200 I D - Drain Current (A)
160
120
100
80 TC = 125_C 40 25_C -55_C 0
50 3V 0 0 2 4 6 8 10
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
200 TC = -55_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 25_C 120 0.010 0.012
On-Resistance vs. Drain Current
VGS = 4.5 V VGS = 10 V
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0.008 125_C 0.006 0.004 0.002
80
40
0 0 20 40 60 80 100
0 0 20 40 60 80 100 120
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
9000 10
Gate Charge
Ciss
V GS - Gate-to-Source Voltage (V)
7500 C - Capacitance (pF)
8
VGS = 30 V ID = 75 A
6000
6
4500
4
3000 Coss 1500 Crss
2
0 0 15 30 45 60 75
0 0 20 40 60 80 100 120
VDS - Drain-to-Source Voltage (V) Document Number: 70870 S-60951--Rev. A, 26-Apr-99
Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600
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SUP/SUB75N08-09L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5 VGS = 10 V ID = 75 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 100
Source-Drain Diode Forward Voltage
1.5
1.0
1
0.5
0 -50
0.1 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2
TJ - Junction Temperature (_C)
VSD - Source-to-Drain Voltage (V)
Avalanche Current vs. Time
300 100
Drain-Source Breakdown Voltage vs. Junction Temperature
100
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90 V (BR)DSS (V) IAV (A) @ TJ = 25_C 80 IAV (A) @ TJ = 150_C 70
I Dav (a)
10
1 0.0001 0.001 0.01 tin (Sec) 0.1 1
60 -50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
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Document Number: 70870 S-60951--Rev. A, 26-Apr-99
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SUP/SUB75N08-09L
New Product
THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
90 300 Limited by rDS(on) 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 ms 100 ms
Vishay Siliconix
Safe Operating Area
75
45
1 ms 10 10 ms TC = 25_C Single Pulse 100 ms dc
30
15
0 0 25 50 75 100 125 150 175
1 0.1 1 10 100
TC - Ambient Temperature (_C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
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0.1 0.1 0.05 0.02
Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec)
Document Number: 70870 S-60951--Rev. A, 26-Apr-99
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2-5
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