![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
www..com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. * Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) * State-of-the-Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. * Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel CASE 751-05, STYLE 1 SORF (SO-8) MRF8372R1, R2 750 mW, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 75C (1) Derate above 75C Storage Temperature Range Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD TJ, Tstg TJmax Symbol RJC Value 16 36 4.0 200 1.67 22.2 - 55 to +150 150 Unit Vdc Vdc Vdc mAdc Watts mW/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 45 Unit C/W DEVICE MARKING ww..com MRF8372 = 8372 NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. (Replaces MRF837/D) (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 www..com MRF8372R1, R2 1 DataSheet 4 U .com www..com www..com 4U www..com www..com ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES 16 36 4.0 -- -- -- -- -- -- -- -- 0.1 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) hFE 30 90 200 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob -- 1.8 2.5 pF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz) Gpe 8.0 55 10 60 -- -- dB % ww..com MRF8372R1, R2 2 www..com MOTOROLA RF DEVICE DATA DataSheet 4 U .com www..com www..com 4U www..com www..com C6 B B L3 + C7 C8 + VCC - C4 Z6 L1 L2 Z5 Z1 C1 Z2 C2 Z3 C3 Z4 DUT C5 C1, C5 -- 0.8 - 8.0 pF Johanson Gigatrim C2, C3 -- 10 pF Ceramic Chip Capacitor C6 -- 91 pF Clamped Mica, Mini-Underwood C4 -- 47 pF Ceramic Chip Capacitor C7 -- 91 pF Clamped Mica, Mini-Underwood C8 -- 1.0 F 25 V Tantalum B -- Bead, Ferroxcube 56-590-65/3B L1, L2 -- 4 Turns, #21 AWG, 5/32 ID L3 -- 7 Turns, #21 AWG, 5/32 ID Z1, Z2 -- 1 x 0.078 Microstrip, Zo = 50 Ohms Z3 -- 0.25 x 0.078 Microstrip, Zo = 50 Ohms Z4 -- 0.15 x 0.078 Microstrip, Zo = 50 Ohms Z5 -- 0.30 x 0.078 Microstrip, Zo = 50 Ohms Z6 -- 1.63 x 0.078 Microstrip, Zo = 50 Ohms PCB -- 1/32 Glass Teflon, r = 2.56 Figure 1. 800 - 900 MHz Broadband Circuit 800/900 MHz BAND DATA 12 GPE 10 G PE , GAIN (dB) Pout = 750 mW VCC = 12.5 Vdc c , COLLECTOR IRL, INPUT RETURN LOSS (dB) EFFICIENCY (%) 70 8 6 50 4 2 800 820 IRL 840 860 880 10 15 20 25 900 c 60 ww..com f, FREQUENCY (MHz) Figure 2. Typical Broadband Performance MOTOROLA RF DEVICE DATA www..com MRF8372R1, R2 3 DataSheet 4 U .com www..com www..com 4U www..com www..com Zin Ohms VCC = 7.5 V f Frequency MHz 806 870 960 VCC = 12.5 V VCC = 7.5 V ZOL* Ohms VCC = 12.5 V Pout = 806 MHz = 1.05 mW Pout = 870 MHz = 855 mW Pout = 960 MHz = 580 mW 20.9 - j31.0 32.1 - j26.6 36.3 - j25.7 Pin = 150 mW 8.0 + j1.9 5.2 + j3.5 6.8 + j4.0 Pin = 100 mW 4.0 + j1.2 6.0 + j1.9 6.1 + j2.5 Pout = 806 MHz = 820 mW Pout = 870 MHz = 635 mW Pout = 960 MHz = 530 mW 24.7 - j19.2 36.9 - j20.5 39.3 - j18.5 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency. Table 1. Series Equivalent Input/Output Impedance TYPICAL CHARACTERISTICS 800/900 MHz BAND DATA (continued) 1200 VCC = 12.5 Vdc Pout , OUTPUT POWER (mW) 900 Pout , OUTPUT POWER (mW) 1000 Pin = 150 mW 100 mW 300 50 mW 0 0 15 30 45 60 75 90 105 Pin, INPUT POWER (mW) 120 135 150 0 800 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 Figure 3. Output Power versus Input Power f = 870 MHz Figure 4. Output Power versus Frequency VCC = 7.5 Vdc 1200 Pin = 150 mW Pout , OUTPUT POWER (mW) 900 100 mW 1600 Pout , OUTPUT POWER (mW) 1200 Pin = 150 mW 800 600 50 mW 300 f = 870 MHz 0 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 16 ww..com 100 mW 400 50 mW VCC = 12.5 Vdc 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 0 800 Figure 5. Output Power versus Collector Voltage Figure 6. Output Power versus Frequency MRF8372R1, R2 4 www..com MOTOROLA RF DEVICE DATA DataSheet 4 U .com www..com www..com 4U www..com 600 7.5 Vdc 500 www..com TYPICAL CHARACTERISTICS 800/900 MHz BAND DATA (continued) 1600 1400 Pout , OUTPUT POWER (mW) 1200 1000 800 600 400 200 f = 512 MHz 0 0 10 20 30 40 50 Pin, INPUT POWER (mW) 60 70 80 7.5 Vdc VCC = 12.5 Vdc 1200 1000 800 600 400 200 VCC = 7.5 Vdc 0 400 420 440 460 480 f, FREQUENCY (MHz) 500 520 Pout , OUTPUT POWER (mW) Pin = 75 mW 50 mW 25 mW Figure 7. Output Power versus Input Power Figure 8. Output Power versus Frequency 1400 1200 Pout , OUTPUT POWER (mW) 1000 800 600 400 200 f = 512 MHz 0 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 16 25 mW Pin = 75 mW 50 mW 1500 1300 1100 50 mW 900 700 600 VCC = 12.5 Vdc 300 400 420 440 460 480 f, FREQUENCY (MHz) 500 520 25 mW Pin = 75 mW Pout , OUTPUT POWER (mW) Figure 9. Output Power versus Collector Voltage Figure 10. Output Power versus Frequency ww..com MOTOROLA RF DEVICE DATA www..com MRF8372R1, R2 5 DataSheet 4 U .com www..com www..com 4U www..com www..com PACKAGE DIMENSIONS A 8 D 5 C E 1 4 H 0.25 M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L q h B C e A SEATING PLANE X 45 _ q L 0.10 A1 0.25 B M CB S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER COLLECTOR COLLECTOR EMITTER EMITTER BASE BASE EMITTER MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ CASE 751-05 ISSUE S ww..com Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MRF8372R1, R2 6 www..com MRF8372/D MOTOROLA RF DEVICE DATA DataSheet 4 U .com www..com www..com 4U www..com |
Price & Availability of MRF8372R2
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |