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| www..com ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B GJ122 Description Features & DC current gain High & Built-in NPN EPITAXIAL PLANAR T RANSISTOR The GJ122 is designed for use in general purposes and low speed switching applications. Package Dimensions a damper diode at E-C TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation(Tc=25 : ) Symbol Tj Tstg BVCBO BVCEO BVEBO IC PD Ratings +150 -55 ~ +150 100 100 5 5 20 Unit : : V V V A W Electrical Characteristics (Rating at 25 : Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 ambient temperature unless otherwise specified) Cob Min. 100 100 5 1 1 - Typ. - Max. 10 10 2 2 4 4 2.5 200 Unit V V V A A mA V V V V K K pF Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 IE=1mA, IC=0 VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 IC=3A, IB=16mA IC=5A, IB=20mA IC=5A, IB=50mA VCE=3V, IC=3A VCE=3V, IC=500mA VCE=3V, IC=3A VCB=10V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% GJ122 Page: 1/3 ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B Characteristics Curve GJ122 Page: 2/3 ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ122 Page: 3/3 |
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