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| -. --. ---..-.. ...-- .,, ",.. . . .- N-CHANNEL ISSUE 2MARCH ENHANCEMENT MODE VERTICAL DMOS FET 94 FEATURES * *R 60 Volt VcEo 0S(0.) = 5 `2 2N7000P I D G s v ABSOLUTE MAXIMUM PARAMETER Drain-Source Continuous Pulsed Voltage Drain Current RATINGS. SYMBOL `DS at Tamb=250C ID ----+-- lDM `GS -- -- lJ&h!sJ VALUE 60 200 ~ `- UNIT v -- mA mA v Drain Current-Voltage at Tamb=250C Temperature ---- Range '500 i 40 Gate-Source Power Dissipation Ptot Ti:T~tg -1 ----2A. mW -55to +150 \ "c ~ Operating and Storage PARAMETER Drain-Source Voltage Gate-Source --Gate-Body Breakdown SYMBOL BVDss MIN. 60 MAX. UNIT v CONDITIONS. ID=l OIA, VGsOV .-- VGs Threshold Leakage Voltage -- `GS(th) lGSS _ 0.8 3 10 1 1 v nA-UA mA -- mA lD=lmA, vG@ `" VD= 15V, vD~=ov Zero Gate Voltege --------. Drain Current lD~s q+f 75 On-State -----.-- -- .---- ~~ Drain Current(1) --.-- .---- On-State VD~48V, VDs48V, VDSIOV, VG~O VG~OV, VGF4.5V T=125C(2) ID(m) Static Drain-Source Voltage (1) Static Drain-Source Resistance (1) `DS(on) RDs& ~ 2.5 0.4 5T Vv `; "- VGs.=10V,lD.500mA On-State ;;~;;;$;%--- 1' (2) __, _ Output 1 (2) c,,, input Capacitance ----. .----. ------ Common Source Capacitance (2) `Reve;se Transfer AL-P-E.-.; c 0ss ~ --. ----- Capacitance I 25 I pF -4 VD-725V, VGs:OV, f= 1MHz pF ---- ------ -- ----- TurmOn Time (2)(3) 10 ns \ VDD=15V, lD=500mA `(on) ~ Rg=25Q, RL=25Q Turn-Off Time (2)(3) 10 ns Voff) I ) Measured under pulsed conditions. Width=300ps. Duty cycle <2% (2) Sample test. 1)Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator 3-13 5 |
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