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 2N2484UB
Silicon NPN Transistor
Data Sheet
Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2484UBJ) * JANTX level (2N2484UBJX) * JANTXV level (2N2484UBJV) * JANS level (2N2484UBJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request
Applications
* General purpose * Low power * NPN silicon transistor
Features
* * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/376
Benefits
Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available
TC = 25C unless otherwise specified
Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT
Rating 60 60 6 50 360 2.06 325 -65 to +200 -65 to +200
Unit Volts Volts Volts mA mW mW/C C/W C C
RJA
TJ TSTG
Copyright 2002 Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N2484UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25C
Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter
Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO ICES IEBO1 IEBO2 Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE7 VBE VCEsat1 Symbol |hFE|1 |hFE|2 hFE COBO CIBO
Test Conditions IC = 10 mA VCB = 60 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150C VCE = 5 Volts VCE = 45 Volts VEB = 6 Volts VEB = 5 Volts Test Conditions IC = 1 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 500 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, 100 A IC = 1 mA, IB = 100 A Test Conditions VCE = 5 Volts, IC = 50 A, f = 5 MHz VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k f = 100 Hz f = 1 kHz f = 10 kHz VCE = 5 Volts, IC = 10 A, Rg = 10 k, 10Hz < Noise BW <15.7kHz VCB = 5V, IC = 1mA, f = 1kHz
Min 60
Typ
Max 10 5 10 2 5 10 2
Units Volts A nA A nA nA A nA Units
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
Min 45 200 225 250 250 225 35 0.5
Typ
Max 500 675 800 800 800
DC Current Gain
Base-Emitter Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance
0.7 0.3 Typ Max
Volts Volts Units
Min 3 2 250
7 900 5 6 pF pF
Noise Figure
NF1 NF2 NF3 NF4 hie hoe hre
7.5 3 2 3 24 40 8x10-4
dB
Noise Figure (wideband) Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit Rev Volt Transfer Ratio
Copyright 2002 Rev. F
dB k mhos
3.5
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com


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