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  Datasheet File OCR Text:
 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MCR 100- 6, - 8
FEATURES Current-IGT: ITRMS: VDRM:
TO-92
Silicon Planar PNPN Thyristor
1. KATHODE 2. GATE
200 0.8 MCR100-6: MCR100-8:
3. ANODE
A
A 400 600 V V
123
Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter On state voltage * Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR100-6 MCR100-8 Peak forward or reverse blocking Current Holding current Symbol VTM VGT VDRM
AND
unless otherwise specified)
Test conditions ITM=1A VAK=7V MIN MAX 1.7 0.8 UNIT V V
IDRM= 10 A ,VMAX=1010 V
400 600
V
VRRM IDRM IRRM IH A2 A1 VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7 V
10 5 5 15 15 30
A mA A A
Gate trigger current
IGT A
VAK=7V 30 80 A
B
80
200
A
* Forward current applied for 1 ms maximum duration, duty cycle1%.
Typical Characteristics
MCR100-6,-8


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