|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 FEATURES Current-IGT: ITRMS: VDRM: TO-92 Silicon Planar PNPN Thyristor 1. KATHODE 2. GATE 200 0.8 MCR100-6: MCR100-8: 3. ANODE A A 400 600 V V 123 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter On state voltage * Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR100-6 MCR100-8 Peak forward or reverse blocking Current Holding current Symbol VTM VGT VDRM AND unless otherwise specified) Test conditions ITM=1A VAK=7V MIN MAX 1.7 0.8 UNIT V V IDRM= 10 A ,VMAX=1010 V 400 600 V VRRM IDRM IRRM IH A2 A1 VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7 V 10 5 5 15 15 30 A mA A A Gate trigger current IGT A VAK=7V 30 80 A B 80 200 A * Forward current applied for 1 ms maximum duration, duty cycle1%. Typical Characteristics MCR100-6,-8 |
Price & Availability of MCR100-8 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |