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| HiPerFASTTM IGBTs IXGK120N60B IXGX120N60B VCES = 600V IC90 = 120A VCE(sat) 2.1V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C ( Chip Capability ) TC = 90C Terminal Current Limit TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 2.4 Clamped Inductive Load TC = 25C Maximum Ratings 600 600 20 30 200 120 76 300 ICM = 200 @ 0.8 * VCES 660 -55 ... +150 150 -55 ... +150 V V V V A A A A A V W C C C C C Nm/lb.in. N/lb. g g G C E Tab PLUS247 (IXGX) G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features Very High Current, Fast Switching IGBT Low VCE(sat) - for Minimum On-State Conduction Losses MOS Gate turn-on - Drive Simplicity Advantages PLUS 247TM Package for Clip or Spring Mounting Space Savings High Power Density Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque ( IXGK ) Mounting Force ( IXGX ) TO-264 PLUS247 300 260 1.13/10 20..120/4.5..27 10 6 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1mA, VGE = 0V = 4mA, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = IC90, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 600 2.5 5.5 V V Applications AC Motor Speed Drives DC Servo and Robot Drives DC Choppers Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies VCE = VCES, VGE = 0V 200 A 2 mA 400 nA 2.1 V (c) 2010 IXYS CORPORATION, All Rights Reserved DS98602C(08/10) IXGK120N60B IXGX120N60B Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive Load, TJ = 125C IC = 100A,VGE = 15V VCE = 0.8 * VCES, RG = 2.4 Note 2 IC = IC90, VGE = 15V, VCE = 0.5 * VCES Inductive Load, TJ = 25C IC = 100A,VGE = 15V VCE = 0.8 * VCES, RG = 2.4 Note 2 VCE = 25V, VGE = 0V, f = 1MHz IC = 60A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 50 75 11 680 190 350 72 131 60 45 2.4 200 160 5.5 60 60 4.8 290 250 8.7 0.15 360 280 9.6 S nF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.19 C/W C/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 TO-264 AA ( IXGK) Outline Back Side 1 - Gate 2, 4 - Collector 3 - Emitter Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Outline Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.91 2.92 1.40 2.13 3.12 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .075 .115 .055 .084 .123 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,727,585 6,759,692 IXGK120N60B IXGX120N60B Fig. 1. Output Characte ristics @ 25 C 150 VGE = 15V 125 13V 11V 9V 250 300 VGE = 15V 13V 11V Fig. 2. Exte nde d Output Characte ris tics @ 25 C I C - Am peres I C - Am peres 100 200 9V 150 100 7V 75 50 7V 25 5V 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 50 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V C E - Volts Fig. 3. Output Characteristics @ 125 C 150 VGE = 15V 125 100 7V 75 13V 11V 9V 1.2 1.2 1.1 VGE = 15V V C E - Volts Fig. 4. De pe nde nce of V CE(sat) on Te m pe rature VC E (sat)- Norm alized I C = 150A I C - Am peres 1.1 1.0 1.0 0.9 0.9 0.8 I C = 100A 50 25 5V 0 0.6 0.8 1 1.2 0.8 0.7 I C = 50A V CE - Volts 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em itte r voltage 3.6 3.4 3.2 TJ = 25C 180 160 140 Fig. 6. Input Adm ittance 2.8 2.6 2.4 2.2 2 1.8 1.6 6 7 8 9 100A 50A I C - Am peres 3 VC E - Volts I C = 150A 120 100 80 60 40 20 0 TJ = 125C 25C -40C V G E - Volts 10 11 12 13 14 15 4 4.5 5 5.5 6 6.5 7 7.5 8 V G E - Volts (c) 2010 IXYS CORPORATION, All Rights Reserved IXGK120N60B IXGX120N60B Fig. 8. Dependence of Turn-off Fig. 7. Transconductance 160 140 10 9 TJ = -40C Energy Loss on RG TJ = 125C VGE = 15V VCE = 480V I C = 100A g f s - Siem ens 25C 125C Eo f f - m illiJoules 120 100 80 60 40 20 0 0 8 7 6 5 4 3 2 1 I C = 50A 20 40 60 80 100 120 140 160 180 2 3 4 5 6 7 8 9 10 I C - Amperes Fig. 9. Dependence of Turn-Off Energy Loss on IC 5 5 R G = 2.7 VGE = 15V TJ = 125C 6 5 5 R G - Ohms Fig. 10. Depende nce of Turn-off Energy Loss on Tem perature Eo f f - m illiJoules Eo f f - M illiJoules 4 4 3 3 2 2 50 VCE = 480V 4 4 3 3 2 2 1 R G = 2.7 VGE = 15V VCE = 480V I C = 100A TJ = 25C I C = 50A 55 60 65 I C - Amperes 70 75 80 85 90 95 100 25 35 45 TJ - Degrees Centigrade 55 65 75 85 95 105 115 125 Fig. 11. Dependence of Turn-off 700 Fig. 12. Dependence of Turn-off 350 Sw itching Tim e on RG td(off) Sw itching Tim e on IC Switching Tim - nanoseconds e 600 tfi - - - - - TJ = 125C VGE = 15V VCE = 480V Switching Tim - nanoseconds e I C = 50A 100A 300 td(off) 250 500 tfi - - - - R G = 2.7 TJ = 125C TJ = 25C VGE = 15V VCE = 480V 400 300 200 I C = 100A 50A 150 100 200 100 2 3 4 50 R G - Ohms 5 6 7 8 9 10 50 60 70 80 90 100 I C - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGK120N60B IXGX120N60B Fig. 13. De pe nde nce of Turn-off Sw itching Tim e on Te m pe rature 350 I C = 50A 16 14 VCE = 300V 00A IC= 1 0mA I G= 1 Fig. 14. Gate Charge Switching Tim - nanoseconds e 300 I C = 100A 250 td(off) , tfi - - - - VG E - Volts 105 115 125 12 10 8 6 4 2 0 R G = 2.7, VGE = 15V VCE = 480V 200 150 I C = 100A 100 50A 50 25 35 45 TJ - Degrees Centigrade 55 65 75 85 95 0 100 200 300 400 500 Q G - nanoCoulombs Fig. 16. Reve rse -Bias Safe Ope rating Area 220 200 180 Fig. 15. Capacitance 100000 f = 1 MHz Capacitance - p F C ies 160 I C - Am peres 10000 140 120 100 80 60 40 TJ = 125C R G = 2.7 dV/dT < 5V/ns 1000 C oes C res 100 0 5 10 15 20 25 30 35 40 20 0 V C E - Volts 100 150 200 250 300 350 400 450 500 550 600 V C E - Volts Fig. 17. Maxim um Trans ie nt Therm al Re s is tance 1 R t h ) J C - C / W ( 0.1 0.01 1 10 Pulse Width - milliseconds 100 1000 (c) 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: G_120N60B(9X) |
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