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SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M BCW65 BCW66 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current(10ms) Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj:Tstg BCW65 60 32 5 800 1000 100 330 -55 to +150 BCW66 75 45 UNIT V V V mA mA mA mW C 3 - 27 BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage BCW65 BCW66 BCW65 BCW66 Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current BCW65 BCW66 Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer IEBO VCE(sat) VBE(SAT) 35 75 100 35 50 110 160 60 80 180 250 100 100 8 12 80 2 10 SYMBOL MIN. V(BR)CEO 32 45 V(BR)CES 60 75 V(BR)EBO ICES 5 20 20 20 20 20 TYP. MAX. UNIT CONDITIONS. V V V A A ICEO=10mA ICEO=10mA IC=10A IC=10A IEBO =10A VCES = 32V VCES = 32V ,Tamb =150oC VCES = 45V VCES = 45V ,Tamb =150oC VEBO =4V IC=100mA, IB =10mA IC= 500mA, IB =50mA* IC=500mA, IB=50mA* IC=100A, IC= 10mA, IC=100mA, IC=500mA, IC=100A, IC= 10mA, IC=100mA, IC=500mA, IC=100A, IC= 10mA, IC=100mA, IC=500mA, VCE =10V VCE = 1V VCE = 1V* VCE = 2V* VCE =10V VCE = 1V VCE = 1V* VCE = 2V* VCE =10V VCE = 1V VCE = 1V* VCE = 2V* nA nA nA 0.3 V 0.7 V 2 V BCW65A hFE BCW66F 160 250 BCW65B hFE BCW66G 250 400 BCW65C hFE BCW66H 350 630 Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Switching times: Turn-On Time Turn-Off Time fT Ccbo Cebo N MHz IC =20mA, VCE =10V f = 100MHz pF pF dB VCBO=10V, f =1MHz VEBO=0.5V, f =1MHz IC= 0.2mA, VCE = 5V RG =1k IC=150mA IB1=- IB2 =15mA RL=150 ton toff 100 400 ns ns Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 28 |
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