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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12002 DESCRIPTION * Collector-Emitter VoltageVCEX = 1500V *Forward Bias safe Safe Operation Area *Switching Time with Inductive Load APPLICATIONS *Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEX VCEO(SUS) VEBO IC IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous VALUE 1500 750 5 UNIT V V V IE PC TJ Tstg Emitter Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature ww w PARAMETER scs .i 2.5 2 4.5 75 150 -65~150 A A .cn mi e A W THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 1.67 UNIT /W Thermal Resistance,Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ12002 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 B 750 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1.8A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1.8A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain--Bandwidth Product COB Output Capacitance tf Fall Time w w. w IC= 0.1A; VCE= 5V; ftest=1.0MHz IE= 0; VCB= 10V; ftest=0.1MHz .cn mi cse is B 0.1 mA 10.5 4 MHz 50 pF IC= 2A , IB1= 1A; LB= 12H 0.65 1.0 s isc Websitewww.iscsemi.cn 2 |
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