View K2411_43253.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
www..com
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
3.0 0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX.
3.6 0.2
4.8 MAX. 1.3 0.2
FEATURES
* Low On-Resistance
RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 m MAX. (@ VGS = 4 V, ID = 15 A)
4 1.3 0.2 0.75 0.1 2.54 123
* Low Ciss Ciss = 1500 pF TYP. * Built-in G-S Gate Protection Diodes * High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
6.0 MAX.
0.5 0.2 2.8 0.2
2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
4.8 MAX.
8.5 0.2
1.3 0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 20 30 120 75 1.5 150 30 90 V V A A W C A mJ W
1.0 0.5
1.5 MAX.
1.4 0.2
1.0 0.3 (2.54) (2.54) 123
1.1 0.4 3.0 0.5
R) .5 ) (0 .8R (0
0.5 0.2
-55 to +150 C
MP-25Z(SURFACE MOUNT TYPE)
Drain
2.8 0.2
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
Gate
Body Diode
Gate Protection Diode Source
The information in this document is subject to change without notice. Document No. D13398EJ1V0DS00 (1st edition) (Previous No. TC-2492) Date Published March 1998 N CP(K) Printed in Japan
(c)
1994
www..com
2SK2411, 2SK2411-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1500 720 190 20 260 130 150 50 5.0 15 1.1 110 320 1.0 15 MIN. TYP. 31 40 1.5 27 10 10 MAX. 40 60 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 30 A VDD = 48 V VGS = 10 V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
D.U.T. RG = 25 PG VGS = 20 V 0 IAS ID VDD BVDSS 50
L PG. VDD VGS 0 VDS t t = 1 s Duty Cycle 1 % Starting Tch RG RG = 10
RL
VGS
Wave Form
VGS
10 % 0 VGS (on)
90 %
VDD ID
Wave Form
ID
10 % 0 td (on)
90 %
90 %
ID
10 % tr ton td (off) toff tf
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
www..com
2SK2411, 2SK2411-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
80
80
60
60
40
40
20
20
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000 100 90
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V Pulsed
PW
ID - Drain Current - A
ID (pulse) 100
d ite ) im 0 V L1 n) ID (DC) (o S = DS Po VG Rt w (a
10
ID - Drain Current - A
=
80 70 60 50 40 30 20 VGS = 4 V VGS = 6 V
10
s
0 s
1
er
10
m
s
10
Di
ss
ip
m DC s
at
io
n
1 0.1
Tc = 25 C Single Pulse 1 10
Li
m
ite
d
100
10 0 2 4 6 8 10 12
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
ID - Drain Current - A
100
10
TA = -25 C 25 C 125 C
1 0
5 VGS - Gate to Source Voltage - V
10
3
www..com
2SK2411, 2SK2411-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth (t) - Transient Thermal Resistance - C/W
100 Rth (ch-a) = 83.3 C/W 10
1
Rth (ch-c) = 1.67 C/W
0.1
0.01 10
100
1m
10 m
100 m
1
10
Single Pulse 100 1000
PW - Pulse Width - s
|yfs| - Forward Transfer Admittance - S
1000 TA = -25 C 25 C 75 C 125 C
RDS (on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed 50 40 30 20 10 0 0 5 10 15 20 VGS - Gate to Source Voltage - V
100
ID = 15 A
10
1 1 10 ID - Drain Current - A 100
RDS (on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 50 40 30 20 10 0
VGS (off) - Gate to Source Cutoff Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA
Pulsed
1.5
VGS = 4 V VGS = 10 V
1.0
0.5
1
10 ID - Drain Current - A
100
0 -50
0
50
100
150
Tch - Channel Temperature - C
4
www..com
2SK2411, 2SK2411-Z
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000
ISD - Diode Forward Current - A
RDS (on) - Drain to Source On-State Resistance - m
80 70 60 50 40 30 20 10 0 -50 -25 ID = 15 A 0 25 50 75 100 125 150 VGS = 10 V VGS = 4 V
Pulsed
100 10 V VGS = 0 10
1 0 1.0 2.0 3.0 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF td (on), tr, td (off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1000
VGS = 0 f = 1 MHz Ciss
td (off) 100 tf tr 10 td (on) VDD = 30 V VGS = 10 V RG = 10 0.1 1.0 10 100
1000 Coss
Crss 100
10 1 10 VDS - Drain to Source Voltage - V 100
1.0
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Diode - ns
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80
VDS - Drain to Source Voltage - V
60 50
VDD = 48 V
12 10 VGS 8
100
40 VDS 30 20 10 0 0 10 20 30 40 50 60 70 80
6 4 2
10 0.1
1.0
10
100
ID - Drain Current - A
Qg - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
di/dt = 50 A/ s VGS = 0
16 ID = 30 A 14
70
www..com
2SK2411, 2SK2411-Z
SINGLE AVALANCHE ENERGY DERATING FACTOR 100
dt - Energy Derating Factor - %
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Energy - mJ
IAS = 30 A
EA
S
80
VDD = 30 V RG = 25 VGS = 20 V 0 IAS 30 A
10
=9
60
0m
J
40
1.0 10
VDD = 30 V VGS = 20 V 0 RG = 25 100 1m 10 m
20 0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
www..com
2SK2411, 2SK2411-Z
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. IC package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. C11745E C11531E C10535E C10943X MEI-1202 X10679E D12971E D12972E D13085E
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2411, 2SK2411-Z
www..com
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

▲Up To Search▲

Price & Availability of K2411

	To Download K2411 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .