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| TOSHIBA Discrete Semiconductors 2SK1358 Field Effect Transistor Silicon N Channel MOS Type (-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications www..com Features Industrial Applications Unit in mm * Low Drain-Source ON Resistance - RDS(ON) = 1.1 (Typ.) * High Forward Transfer Admittance - Yfs = 4.0S (Typ.) * Low Leakage Current - IDSS = 300A (Max.) @ VDS = 720V * Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25C) Channel Temperature Storage Temperature Range SYMBOL VDSS VDGR VGSS ID IDP PD Tch Tstg RATING 900 900 30 9 27 150 150 -55 ~ 150 UNIT V V V A W C C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient SYMBOL Rth(ch-c) Rth(ch-a) MAX. 0.833 50 UNIT C/W C/W This transistor is an electrostatic sensitive device. Please handle with care. TOSHIBA CORPORATION 1/6 2SK1358 Electrical Characteristics (Ta = 25C) CHARACTERISTIC Gate Leakage Current Drain Cut-off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance www..com Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time SYMBOL IGSS IDSS V(BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff TEST CONDITION VGS = 25V, VDS = 0V VDS = 720V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, ID = 1mA ID = 4A, VGS = 10V VDS = 20V, ID = 4A VDS = 25V, VGS = 0V, f = 1MHz MIN. - - 900 1.5 - 2.0 - - - - - - - TYP. - - - - 1.1 4.0 1300 100 180 25 40 20 100 MAX. 100 300 - 3.5 1.4 - 1800 150 260 50 80 40 200 UNIT nA A V V S pF ns Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge Qg Qgs Qgd VDD = 400V, VGS = 10V, ID = 9A - - - 120 70 50 240 - - nC Source-Drain Diode Ratings and Characteristics (Ta = 25C) CHARACTERISTICS Continuous Drain Reverse Current Pulse Drain Reverse Current Diode Forward Voltage SYMBOL IDR IDRP VDSF TEST CONDITION - - IDR = 9A, VGS = 0V MIN. - - - TYP. - - - MAX. 9 27 -2.0 UNIT A A V 2/6 TOSHIBA CORPORATION 2SK1358 www..com TOSHIBA CORPORATION 3/6 2SK1358 www..com 4/6 TOSHIBA CORPORATION 2SK1358 www..com TOSHIBA CORPORATION 5/6 2SK1358 f Notes www..com The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. 6/6 TOSHIBA CORPORATION |
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