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Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 40N60B2 IXGT 40N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A < 1.7 V = 82 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C
Maximum Ratings 600 600 20 30 75 40 200 ICM = 80 300 -55 ... +150 150 -55 ... +150 300 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
C (TAB) G C E C = Collector, TAB = Collector
W C C C C Features
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD
1.13/10 Nm/lb.in. 6 4 g g
Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 25C 1.7 V A mA nA V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 30 A, VGE = 15 V
(c) 2003 IXYS All rights reserved
DS99049A(11/03)
IXGH 40N60B2 IXGT 40N60B2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 36 2560 VCE = 25 V, VGE = 0 V, f = 1 MHz 180 54 100 IC = 30 A, VGE = 15 V, VCE = 300 V 15 36 18 Inductive load, TJ = 25C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 20 130 82 0.4 18 Inductive load, TJ = 125C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 20 0.3 240 150 1.10 200 150 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 30 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns
e
Dim.
0.8 mJ ns ns mJ ns ns mJ 0.42 K/W
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 40N60B2 IXGT 40N60B2
Fig. 1. Output Characte ristics @ 25 Deg. C
60 50 40 30 20 10 5V 0 0.5 1 1.5 2 2.5 3 VGE = 15V 13V 11V 210 9V 180 150
Fig. 2. Extended Output Characte ristics @ 25 de g. C
VGE = 15V 13V
11V
I C - Amperes
I C - Amperes
7V
9V 120 90 60 30 5V 0 0 1 2 3 4 5 6 7
7V
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
60 50 40 30 20 10 0 0.5 1 1.5 2 2.5 3 VGE = 15V 13V 11V 1.4 9V 1.3
V C E - Volts Fig. 4. De pende nce of V CE(sat) on Tem perature
V GE = 15V
I C = 60A
I C - Amperes
7V
V C E (sat)- Normalized
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
I C = 30A
5V
I C = 15A
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
4 TJ = 25C 3.5 3 I C = 60A 30A 15A 150 120 90 60 30 0 5 6 7 8 9 10 11 12 13 14 15 16 17 3 4 180
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
2.5 2 1.5 1
I C - Amperes
VC E - Volts
TJ = 125C 25C -40C
5
6
7
8
9
10
V G E - Volts
(c) 2003 IXYS All rights reserved
V G E - Volts
IXGH 40N60B2 IXGT 40N60B2
Fig. 7. Transconductance
60 50 TJ = -40C 25C 125C 3 2.7 2.4 I C = 60A TJ = 125C VGE = 15V VCE = 400V
Fig. 8. Dependence of Turn-Off Energy on RG
E off - milliJoules
g f s - Siemens
40 30 20
2.1 1.8 1.5 1.2 0.9
I C = 30A
10 0 0 30 60 90 120 150 180
0.6 0.3 3 6 9 12 15 18
I C = 15A
21
24
27
30
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic
2.7 2.4 2.1 R G = 3.3 VGE = 15V VCE = 400V 2.7 2.4 2.1 R G = 3.3 VGE = 15V VCE = 400V
R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature
I C = 60A
E off - MilliJoules
E off - milliJoules
1.8 1.5 1.2 0.9 0.6 0.3 0 15 20 25 30 35 40 45 50 55 60 TJ = 25C TJ = 125C
1.8 1.5 1.2 0.9 0.6 0.3 0 25 35 45 55 65 75 85 95 105 115 125 I C = 15A I C = 30A
I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
600 550 300
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic
275
Switching Time - nanosecond
Switching Time - nanosecond
500 450 400 350 300 250 200 150 100 3
td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 400V
td(off) tfi - - - - - R G = 3.3 VGE = 15V VCE = 400V TJ = 125C
250 225 200 175 150 125 100 75 TJ = 25C
I C = 15A I C = 60A I C = 30A
6
9
12
15
18
21
24
27
30
15
20
25
30
35
40
45
50
55
60
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
I C - Amperes
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 40N60B2 IXGT 40N60B2
Fig. 13. Dependence of Turn-Off Sw itching Tim e on Te m perature
275 250 225 200 175 150 125 100 75 25 35 45 0 I C = 60A I C = 30A 15
Fig. 14. Gate Charge
VCE = 300V I C = 30A I G = 10mA
Switching Time - nanosecond
td(off) tfi - - - - - R G = 3.3 VGE = 15V VCE = 400V
12
I C = 15A
VG E - Volts
9
6
3
TJ - Degrees Centigrade
55
65
75
85
95
105 115 125
0
10
20
30
40
50
60
70
80
90
100
Q G - nanoCoulombs
Fig. 15. Capacitance
10000 f = 1 MHz
Capacitance - p F
1000
C ies
C oes 100
C res 10 0 5 10 15
V C E - Volts
20
25
30
35
40
Fig. 16. Maxim um Trans ient Therm al Res istance
0.45 0.4 0.35
R (th) J C - (C/W)
0.3 0.25 0.2 0.15 0.1 0.05 1 10
Pulse Width - milliseconds
100
1000
(c) 2003 IXYS All rights reserved

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