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PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions
IXFK 200N10P IXFX 200N10P
VDSS = 100 V ID25 = 200 A RDS(on) 7.5 m trr 150 ns
Maximum Ratings 100 100 20 30 200 75 400 60 100 4 10 830 -55 ... +175 175 -55 ... +150 300 260 20 0.9/6 120/45 26 10 6 V V V V A A A A mJ J V/ns W C C C C C Nm/lb.in Nm/lb.in g g
TO-264 (IXFK)
TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
G D S
D (TAB)
PLUS247 (IXFX)
D
S TAB
G = Gate S = Source
D = Drain Tab = Drain
1.6mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-264 Mounting force PLUS247 TO-264 PLUS247
Features
l l
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 8 mA VGS = 20 V, VGS = 0 V VDS = VDSS TJ = 150C TJ = 175C RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t 300 s, duty cycle d 2 %
Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 500 2.5 7.5 5.5 V V nA A A mA m m
l
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
Easy to mount Space savings High power density
(c) 2006 IXYS All rights reserved
DS99590E(03/06)
IXFK 200N10P IXFX 200N10P
TO-264 (IXFK) Outline Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 235 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 135 TO-264 and PLUS247 0.15 S pF pF pF ns ns ns ns nC nC nC 0.18C/W C/W
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 200 400 1.5 A A V
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, dI/dt = 100 A/s VR = 50 V, VGS = 0 V 0.4 6
150 ns C A
PLUS 247TM (IXFX) Outline
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFK 200N10P IXFX 200N10P
Fig. 1. Output Characteristics @ 25C
200 175 150 VGS = 10V 9V 350 VGS = 10V 300 250 8V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
125 100 75 50 25 0 0 0.2 0.4 0.6 0.8 1
I D - Amperes
200 150
8V
7V
7V 100
6V
50 0
6V
1.2
1.4
1.6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V D S - Volts Fig. 3. Output Characteristics @ 150C
200 175 150 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 100A I D = 200A
I D - Amperes
125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 6V 7V
5V
-50
-25
0
25
50
75
100
125
150
175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
2.4 2.2 80 70 TJ = 175C 60
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 50 100 150 200 VGS = 15V
I D - Amperes
50 40 30 20 10
VGS = 10V
TJ = 25C 0 250 300 350 -50 -25 0 25 50 75 100 125 150 175
I D - Amperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFK 200N10P IXFX 200N10P
Fig. 7. Input Adm ittance
300 140 120 100
Fig. 8. Transconductance
250
g f s - Siemens
I D - Amperes
200
TJ = -40C 80 60 40 20 0 25C 150C
150 TJ = -40C 25C 50 150C
100
0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
0
50
100
150
200
250
300
350
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 8 250 7 10 9 VDS = 50V I D = 100A I G = 10mA
I D - Amperes
Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
200 150 100 50 0
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 175C TC = 25C
Fig. 11. Capacitance
100,000 f = 1MHz
R DS(on) Limit
Capacitance - picoFarads
10,000
I D - Amperes
C iss
100s
C oss
100
1ms
1,000
C rss
10ms DC
100 0 5 10 15 20 25 30 35 40
10 1 10 100 1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFK 200N10P IXFX 200N10P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01
0.00 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2006 IXYS All rights reserved

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