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Advance Technical Information
Polar3TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK80N60P3 IXFX80N60P3
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
600V 80A 70m 250ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C
Maximum Ratings 600 600 30 40 80 200 40 2 1300 35 -55 ... +150 150 -55 ... +150 V V V V A A A J W V/ns C C C C C Nm/lb.in. N/lb. g g
G D S
Tab
PLUS247 (IXFX)
G
D
S
Tab D = Drain Tab = Drain
G = Gate S = Source
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Features Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.0 200 V V nA Easy to Mount Space Savings
Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications
50 A 4 mA 70 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100304(03/11)
IXFK80N60P3 IXFX80N60P3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 55 90 13.1 1240 5.0 1.0 48 25 87 8 190 56 48 S nF pF pF ns ns ns ns nC nC nC 0.096 C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS , VGS = 0V, Note 1 IF = 40A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.4 13.0 Characteristic Values Min. Typ. Max. 80 320 1.5 250 A A V ns C A
PLUS 247TM Outline
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain 3 - Source
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK80N60P3 IXFX80N60P3
Fig. 1. Output Characteristics @ T J = 25C
80 70 60 VGS = 10V 7V 180 160 140 6V 120 7V VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
ID - Amperes
50 40 30 20 10 0 0 1 2 3 4
100 80 60 40 6V
5V
20 0 5 6 0 5 10
5V 15 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
80 70 60 VGS = 10V 7V 6V 3.0 2.6
Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature
VGS = 10V
R DS(on) - Normalized
ID - Amperes
50 40 30 5V 20 10 4V 0 0 2 4 6 8 10 12 14
2.2 1.8 1.4 1.0 0.6 0.2 -50 -25 0 25 50
I D = 80A I D = 40A
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C 90 80 70 60
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 20 40 60 80 100 120 140 160 180 TJ = 25C
ID - Amperes
50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFK80N60P3 IXFX80N60P3
Fig. 7. Input Admittance
120 160 TJ = - 40C 140 100 TJ = 125C 25C - 40C 120 25C
Fig. 8. Transconductance
g f s - Siemens
80
ID - Amperes
100 125C 80 60 40
60
40
20 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 0 20 40 60 80 100 120
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240 10 9 200 8 7 VDS = 300V I D = 40A I G = 10mA
Fig. 10. Gate Charge
160
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
6 5 4 3 2 1
120
80
40
0
0 0 20 40 60 80 100 120 140 160 180 200
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1000
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz
Ciss
Capacitance - PicoFarads
RDS(on) Limit
10,000 100 1,000 Coss 100
ID - Amperes
100s
10 10 TJ = 150C TC = 25C Single Pulse 1ms 1 0 5 10 15 20 25 30 35 40 1 10 100 1,000
Crss
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK80N60P3 IXFX80N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.2 AAAAA
0.1
Z(th)JC - C / W
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N60P3(W9)03-10-11

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