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Advance Technical Information
Polar3TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH42N60P3
VDSS ID25
RDS(on)
= 600V = 42A 185m
TO-247
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 600 600 30 40 42 100 21 1 35 830 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C Nm/lb.in. g
G
D
S D Tab
Tab
G = Gate S = Source
= Drain = Drain
Features International Standard Package Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque
300 260 1.13 / 10 6
Advantages High Power Density Easy to Mount Space Savings
Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.0 100 V V nA Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
25 A 1.5 mA 185 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100296A(03/11)
IXFH42N60P3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.21 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 25 42 5150 500 2.8 1.0 32 23 60 17 78 23 20 S pF pF pF ns ns ns ns nC nC nC 0.15 C/W C/W
e
1 2 3
TO-247 (IXFH) Outline
P
Terminals: 1 - Gate 3 - Source
2 - Drain
Dim.
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 21A, -di/dt = 100A/s VR = 100V, VGS = 0V 12.4 1.4 Characteristic Values Min. Typ. Max. 42 168 1.3 250 A A V ns A C
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Note
1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFH42N60P3
Fig. 1. Output Characteristics @ T J = 25C
45 40 35 30 6V VGS = 10V 7V 80 VGS = 10V 70 60 7V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 5V
ID - Amperes
50 40 6V 30 20 10 0 0 5 10 15 20 25 30
5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
45 40 35 30 VGS = 10V 7V 6V 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 4V 0 0 2 4 6 8 10 12 14 16 18 20 22 24 0.2 -50
Fig. 4. RDS(on) Normalized to ID = 21A Value vs. Junction Temperature
VGS = 10V
25 20 15 10 5 5V
R DS(on) - Normalized
I D = 42A
ID - Amperes
I D = 21A
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 21A Value vs. Drain Current
45 3.0 VGS = 10V TJ = 125C 2.6 40 35 30 2.2
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
ID - Amperes
TJ = 25C 0 10 20 30 40 50 60 70 80
25 20 15 10
1.8
1.4
1.0 5 0.6 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFH42N60P3
Fig. 7. Input Admittance
70 80 TJ = - 40C 60 TJ = 125C 25C - 40C 70 60
Fig. 8. Transconductance
50
25C
g f s - Siemens
ID - Amperes
50 125C 40 30 20
40
30
20
10
10 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 50 60 70
0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
120 10 9 100 8 7 VDS = 300V I D = 21A I G = 10mA
Fig. 10. Gate Charge
80
IS - Amperes
60
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
6 5 4 3 2 1
40
20
0
0 0 10 20 30 40 50 60 70 80
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 Ciss 100
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 100s
Capacitance - PicoFarads
1,000
Coss 100
10 Crss TJ = 150C TC = 25C Single Pulse 30 35 40 1 10 100 1,000
f = 1 MHz
1 0 5 10 15 20 25
ID - Amperes
10
1ms
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH42N60P3
Fig. 12. Maximum Transient Thermal Impedance
1
Fig. 13. Maximium Transient Thermal Impedance
0.2
aaaa
0.1
Z (th)JC - C / W
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_42P60P3(W7)03-24-11

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