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| PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB210N20P VDSS ID25 RDS(on) trr = = 200V 210A 10.5m 200ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C Maximum Ratings 200 200 20 30 210 160 600 105 4 20 1500 -55 ... +175 175 -55 ... +175 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W C C C C C N/lb. g G = Gate S = Source G D S Tab D = Drain Tab = Drain Features Low Package Inductance Avalanche Rated High Current Handling Capability Low RDS(ON) and QG Fast Intrinsic Diode Advantages Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150C Characteristic Values Min. Typ. Max. 200 2.5 4.5 200 25 2 10.5 V V nA A mA m DC-DC Coverters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC and DC Motor Drives Uninterrupted Power Supplies High Speed Power Switching Applications VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2010 IXYS CORPORATION, All Rights Reserved DS100018A(05/10) IXFB210N20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.13 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID =0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 60 103 18.6 3270 80 43 30 70 18 255 94 83 0.10 S nF pF pF ns ns ns ns nC nC nC C/W C/W PLUS264TM (IXFB) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 105A, VGS = 0V, Note 1 IF = 105A, -di/dt = 150A/s VR = 100V Characteristic Values Min. Typ. Max. 210 800 1.3 200 1.34 18 A A V ns C A Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB210N20P Fig. 1. Output Characteristics @ T J = 25C 220 200 180 160 VGS = 15V 10V 8V 350 300 VGS = 15V 10V 8V Fig. 2. Extended Output Characteristics @ T J = 25C 250 ID - Amperes ID - Amperes 140 120 100 80 7V 200 7V 150 100 6V 6V 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 5V 50 5V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150C 220 200 180 160 VGS = 15V 10V 8V 3.0 Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature VGS = 10V 2.6 R DS(on) - Normalized 7V 2.2 I D = 210A I D = 105A ID - Amperes 140 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5V 6V 1.8 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current 3.0 TJ = 175C 2.6 140 180 160 Fig. 6. Maximum Drain Current vs. Case Temperature External Lead Current Limit R DS(on) - Normalized 1.8 VGS = 10V 15V - - - - ID - Amperes TJ = 25C 150 200 250 300 350 2.2 120 100 80 60 40 20 1.4 1.0 0.6 0 50 100 0 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade (c) 2010 IXYS CORPORATION, All Rights Reserved IXFB210N20P Fig. 7. Input Admittance 180 160 140 180 160 140 TJ = - 40C Fig. 8. Transconductance 100 80 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 TJ = 150C 25C - 40C g f s - Siemens ID - Amperes 120 120 100 25C 150C 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 300 8 250 7 10 9 VDS = 100V I D = 105A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts TJ = 150C TJ = 25C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 200 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 220 240 260 150 100 50 0 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1000 Fig. 12. Forward-Bias Safe Operating Area RDS(on) Limit f = 1 MHz Cisss 25s 100s Capacitance - PicoFarads 10,000 100 ID - Amperes External Lead Limit 1ms 10 1,000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 1 TJ = 175C TC = 25C Single Pulse 10ms 100ms DC 10 100 1000 0.1 1 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFB210N20P Fig. 13. Maximum Transient Thermal Impedance 1 0.1 Z (th )JC - C / W 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: F_210N20P(9S) 5-25-10-A |
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