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| SSM7002DGU Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM7002DG acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM7002DGU is supplied in a RoHS-compliant SOT-363 package, which is widely used where board space is critical and a small footprint is required. 50V 3 250mA Pb-free; RoHS-compliant SOT-363 G1 S1 D2 D1 SOT-363 S2 G2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 50 20 T A = 25C 250 Units V V mA ISD IDM PD TSTG TJ Source-drain diode current Total power dissipation , TA = 25C TA = 75C Storage temperature range Operating junction temperature range 115 1.0 200 120 -55 to 150 -55 to 150 mA A mW mW C C THERMAL CHARACTERISTICS Symbol RJA Parameter Maximum thermal resistance, junction-ambient 3 Value 625 Units C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on FR4 board 11/26/2005 Rev.3.01 www.SiliconStandard.com 1 of 5 SSM7002DGU ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage (at Tj = 25C, unless otherwise specified) Test Conditions VGS=0V, ID=10uA Min. 50 Typ. Max. Units V ID(ON) RDS(ON) On-state drain current Static drain-source on-resistance VDS= 7V, VGS=10V VGS=10V, ID =250mA VGS=5V, ID =50mA 500 1 80 - - 3 4 2.5 1.0 100 mA V mS uA nA VGS(th) gfs IDSS IGSS Gate threshold voltage Forward transconductance VDS=VGS, ID=250uA VDS=7V, ID=200mA Drain-source leakage current Gate-source leakage current VDS=50V, VGS=0V VGS=20V td(on) tr td(off) tf Ciss Coss Crss Turn-on delay time 2 Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance VDS=30V ID=100mA RG=10 , VGEN=10V VGS=0V VDS=25V f=1.0MHz - 7.5 6 7.5 3 19 10 3 20 20 50 25 5 ns ns ns ns pF pF pF Source-Drain Diode Symbol VSD Parameter Forward voltage 2 Test Conditions IS=115mA, VGS=0V Min. - Typ. 0.76 Max. Units 1.5 V Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 11/26/2005 Rev.3.01 www.SiliconStandard.com 2 of 5 SSM7002DGU Drain Current (A) Drain to source voltage (V) Drain Current (A) Gate to source voltage (V) Fig 1. Typical output characteristics Fig 2. Typical transfer characteristics Drain to source resistance ( )) Capacitance (pF) Drain to source voltage (V) Drain current (A) Fig 3. Typical Capacitance Fig 4. Normalized on-resistance vs. junction temperature Gate source threshold voltage (V) - Source-drain Current (A) Body diode forward voltage (V) Junction temperature (C) Fig 5. Forward characteristics of the reverse diode 11/26/2005 Rev.3.01 Fig 6. Gate threshold voltage vs. junction temperature www.SiliconStandard.com 3 of 5 SSM7002DGU Gate -source voltage (V) Transconductance (S) Total gate charge (nC) Drain to source current (A) Fig 7. Gate charge characteristics Fig 8. Typical transconductance Drain Current (A) Drain-source voltage (V) Fig 9. Maximum safe operating area Transient thermal impedance r(t) Square wave pulse duration (S) Fig 10. Normalized Transient Thermal Impedance 11/26/2005 Rev.3.01 www.SiliconStandard.com 4 of 5 PHYSICAL DIMENSIONS SSM7002DGU PHYSICAL DIMENSIONS SOT-363 DIM A A1 bp C D E e e1 He Lp Q W SOT-363 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.031 0.043 -0.10 -0.004 0.10 0.30 0.004 0.012 0.10 0.25 0.004 0.010 1.80 2.20 0.071 0.087 1.15 1.35 0.045 0.053 1.30 (typ) 0.052 (typ) 0.65 (typ) 0.026(typ) 2.00 2.20 0.079 0.087 0.10 0.3 0.004 0.012 0.20 (typ) 0.008 (typ) 0.20 (typ) 0.008 (typ) 10o (typ) 10o (typ) PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB). Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 11/26/2005 Rev.3.01 www.SiliconStandard.com 5 of 5 |
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