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| 4V Drive Nch MOSFET RVQ040N05 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT6 1.0MAX 0.85 0.7 Features 1) Low On-resistance. 2) Space savingsmall surface mount package (TSMT6). 1pin mark 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (1) (2) (3) 0.4 0.16 Applications Switching Packaging specifications Package Type RVQ040N05 Code Basic ordering unit (pieces) Taping TR 3000 Each lead has same dimensions Abbreviated symbol : QG Inner circuit (6) (5) (4) 2 1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 45 21 4.0 16 1.6 16 1.25 150 -55 to +150 Unit V V A A A A W C C Thermal resistance Parameter Channel to ambient Mounted on a ceramic board Symbol Rth(ch-a) Limits 100 Unit C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 0.3~0.6 1/5 2009.02 - Rev.A RVQ040N05 Electrical characteristics (Ta=25C) Parameter Symbol Min. - 45 - 1.0 - - - 3.0 - - - - - - - - - - Typ. - - - - 38 47 53 - 530 120 65 12 15 40 12 6.3 2.0 2.6 Max. 10 - 1 2.5 53 66 74 - - - - - - - - 8.8 - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Data Sheet Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=21V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 4A, VGS= 10V ID= 4A, VGS= 4.5V ID= 4A, VGS= 4.0V VDS= 10V, ID= 4A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 2.0A VGS= 10V RL=12.5 RG=10 VDD 25V, ID= 4A VGS= 5V RL=6, RG=10 RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 4.0A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.02 - Rev.A RVQ040N05 Electrical characteristic curves 5 DRAIN CURRENT : ID[A] 4 3 VGS= 3.0V 2 VGS= 2.6V 1 0 0 0.2 0.4 0.6 0.8 1 VGS= 2.4V Ta=25C Pulsed DRAIN CURRENT : ID[A] 5 4 3 2 1 0 0 2 4 6 8 10 VGS= 2.4V VGS= 10V VGS= 4.5 VGS= 4.0V Ta=25C Pulsed VGS= 2.8V DRAIN CURRENT : ID[A] 10 Data Sheet VGS= 10V VGS= 4.5 VGS= 4.0V VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C 1 VGS= 2.8V VGS= 2.6V 0.1 0.01 0.001 0 1 2 3 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics() GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Ta= 25C Pulsed 1000 VGS= 10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 VGS= 4.5V Pulsed 100 VGS= 4.0V VGS= 4.5V VGS= 10V 10 10 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10 1 0.1 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10 1 0.1 1 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1000 VGS= 4.0V Pulsed 100 100 REVERSE DRAIN CURRENT : Is [A] VDS= 10V Pulsed 10 10 VGS=0V Pulsed 1 10 Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10 0.1 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 10 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A RVQ040N05 Data Sheet 60 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] SWITCHING TIME : t [ns] Ta=25C Pulsed 50 ID= 2.0A ID= 4.0A 40 10000 td(off) tf GATE-SOURCE VOLTAGE : VGS [V] Ta=25C VDD= 25V VGS= 10V RG=10 Pulsed 10 8 6 4 2 0 0 2 4 6 8 10 12 Ta=25C VDD= 25V ID= 4.0A RG=10 Pulsed 1000 100 td(on) 10 tr 30 0 5 10 15 20 1 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ta=25C f=1MHz VGS=0V 1000 100 Operation in this area is limited by RDS(ON) (VGS= 10V) Pw=100us DRAIN CURRENT : ID (A) Ciss 10 Pw=1ms Pw=10ms 1 DC operation 100 Crss Coss 10 0.01 0.1 1 10 100 0.1 Ta = 25C Single Pulse MOUNTED ON SERAMIC BOARD 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Maximum Safe Operating Aera NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 0.01 0.001 Ta = 25C Single Pulse Rth(ch-a)(t) = r(t)xRth(ch-a) Rth(ch-a) = 100 C/W 0.001 0.01 0.1 1 10 100 1000 0.0001 0.0001 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.02 - Rev.A RVQ040N05 Measurement circuit Pulse Width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.02 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.1 |
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