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| IPB60R385CP CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ON x Qg * Ultra low gate charge * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.385 17 nC PG-TO263 CoolMOS CP is specially designed for: * Hard switching SMPS topologies Type IPB60R385CP Package PG-TO263 Ordering Code SP000228365 Marking 6R385P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 C T C=25 C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V Value 9.0 5.7 27 227 0.3 3 50 20 30 83 -55 ... 150 W C A V/ns V mJ Unit A Rev. 2.0 page 1 2006-06-06 IPB60R385CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL 1 1.5 62 K/W T C=25 C Value 5.2 27 15 Values typ. max. V/ns Unit Unit A - 35 - Soldering temperature, wave- & reflowsolderin allowed T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) V DS=V GS, I D=0.34 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=5.2 A, T j=25 C V GS=10 V, I D=5.2 A, T j=150 C Gate resistance Rev. 2.0 RG f =1 MHz, open drain page 2 600 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 1 A - 10 0.35 100 0.385 nA - 0.94 1.8 2006-06-06 IPB60R385CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related6) Effective output capacitance, time related7) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) 3) 4) 5) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 790 38 36 - pF V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=5.2 A, R G=3.3 96 10 5 40 5 ns Q gs Q gd Qg V plateau V DD=400 V, I D=5.2 A, V GS=0 to 10 V - 4 6 17 5.0 22 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=5.2 A, T j=25 C - 0.9 260 3.1 24 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISDID, di/dt400A/s, VDClink=400V, Vpeak 6) 7) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 page 3 2006-06-06 IPB60R385CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 100 102 limited by on-state resistance 80 10 s 1 s 101 60 100 s P tot [W] I D [A] 1 ms DC 40 100 10 ms 20 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z thJC=f(t P) parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 25 20 V 10 V 8V 7V 20 100 0.5 6V Z thJC [K/W] 15 0.1 0.05 I D [A] 0.2 5.5 V 10 10-1 0.02 0.01 single pulse 5V 5 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.0 page 4 2006-06-06 IPB60R385CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 16 8V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 1.6 6V 6.5 V 7V 5V 5.5 V 7V 14 20 V 10 V 6V 12 1.2 5.5 V 20 V 10 8 R DS(on) [] 20 I D [A] 5V 0.8 6 4.5 V 4 0.4 2 0 0 5 10 15 0 0 5 10 15 20 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=5.2 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1.2 40 36 C 25 1 32 28 24 0.8 R DS(on) [] 0.6 98 % I D [A] 20 16 C 150 0.4 typ 12 8 4 0.2 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2006-06-06 IPB60R385CP 9 Typ. gate charge V GS=f(Q gate); I D=5.2 A pulsed parameter: V DD 10 9 8 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 7 6 400 V 101 150 C 25 C 150 C, 98% V GS [V] 5 4 3 2 1 0 0 5 10 15 20 I F [A] 100 25 C, 98% 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=3.4 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 250 700 200 660 V BR(DSS) [V] 150 E AS [mJ] 620 100 580 50 0 20 60 100 140 180 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.0 page 6 2006-06-06 IPB60R385CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 6 104 4 102 Coss E oss [J] 2 Crss 0 10 3 Ciss C [pF] 101 10 0 0 100 200 300 400 500 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 page 7 2006-06-06 IPB60R385CP Definition of diode switching characteristics Rev. 2.0 page 8 2006-06-06 IPB60R385CP PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Rev. 2.0 page 9 2006-06-06 IPB60R385CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristcs. Terms of delivery and rights to technical change reserved. We hereby disclaims any and all warranties, including but not limited to warranties of non-infringement regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2006-06-06 |
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