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2SK3438
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSV)
2SK3438
DC-DC Converter, Relay Drive and Motor Drive Applications
* * * * Low drain-source ON-resistance: RDS (ON) = 0.74 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC (Note 1) Drain current Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 30 80 252 10 8 150 -55 to 150 A Unit V V V
JEDEC
W mJ A mJ C C
2-9F1C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEITA TOSHIBA
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit C/W
4
1
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 4.41 mH, RG = 25, IAR = 10 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A ID = 5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 15 V, ID = 5 A Min 30 600 3.0 2.0 Typ. 0.74 4.5 1200 10 130 13 Max 10 100 5.0 1.0 pF Unit A V A V V S
10 V VGS 0V 10 RL = 60 VDD 300 V VOUT

ns

Turn-on time Switching time Fall time
40
8

nC
Duty 1%, tw = 10 s Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
50 28 16 12
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1600 17 Max 10 30 -1.7 Unit A A V ns C
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Part No. (or abbreviation code) Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No. Note 4
K3438
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SK3438
ID - VDS
10 Common source Tc = 25C Pulse test 15 10 7.75 16 20 Common source Tc = 25C Pulse test
ID - VDS
15 10 8.5
(A)
ID
6
ID
7.25 7.0
(A)
8
7.5
12
8.0
Drain current
Drain current
4
6.75 6.5
8
7.5 7.25 7.0
2
VGS = 6.0 V
4
6.5 VGS = 6.0 V
0 0
4
8
12
16
20
0 0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
12
VDS - VGS
20 Common source Tc = 25C Pulse test
10
(V)
16
Common source VDS = 20 V Pulse test
(A)
ID
8
VDS Drain-source voltage
12 ID = 10 A 8 25
Drain current
6
4
2
100
4
5 2.5
Tc = -55C
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
100 Common source VDS = 20 V Pulse test 100 Common source Tc = 25C Pulse test
RDS (ON) - ID
Yfs
(S)
Forward transfer admittance
10 Tc = -55C 25 100
Drain-source on resistance RDS (ON) ()
10
1
1
VGS = 10, 15 V
0.1 0.1
1
10
100
0.1 0.1
1
10
100
Drain current
ID
(A)
Drain current
ID
(A)
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2SK3438
RDS (ON) - Tc
2.5 Common source VGS = 10 V Pulse test 100
IDR - VDS (A)
Common source Tc = 25C Pulse test
Drain-source on resistance RDS (ON) ()
2.0
ID = 10 A 5 2.5
IDR Drain reverse current
10
1.5
1.0
1
0.5
10 0.1 0 5 -0.2 3 -0.4 1 -0.6
0 -80
VGS = 0, -1 V -0.8 -1 -1.2
-40
0
40
80
120
160
Channel temperature
Tc
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
10000 6
Vth - Tc Vth (V)
Common source VDS = 10 V ID = 1 mA Pulse test
5
(pF)
1000
Ciss
Gate threshold voltage
4
C
3
Capacitance
100 Coss
2
10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100 1000 Crss
1
0 -80
-40
0
40
80
120
160
Channel temperature
Tc
(C)
Drain-source Voltage
VDS
(V)
PD - Tc
100 500
Dynamic input/output characteristics
Common source ID = 10 A Tc = 25C Pulse test VDS 300 VDD = 100 V 200 400 200 VGS 100 4 8 12 20
(W)
(V)
PD
80
400
16
VDS
Drain Power dissipation
Drain-source Voltage
40
20
0 0
40
80
120
160
200
0 0
10
20
30
0 40
Channel temperature
Tc
(C)
Total gate charge
Qg
(nC)
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Gate-source voltage
60
VGS
(V)
2SK3438
rth - tw
10
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1
Duty = 0.5 0.2 0.1
0.1
0.05 0.02 0.01 PDM t T Duty = t/T Rth (ch-c) = 1.56C/W
0.01
Single pulse
0.001 10
100
1m
10 m
100 m
1
10
Pulse width
tw
(s)
Safe operating area
100 400
EAS - Tch
Avalanche energy EAS (mJ)
ID max (pulsed) *
300
10
ID max (continuous)
100 s *
Drain current ID (A)
1 ms *
200
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C
50
75
100
125
150
Channel temperature (initial) Tch (C)
Curves must be derated linearly with increase in temperature. 0.01 1 10 VDSS max 100 1000
15 V -15 V
BVDSS IAR VDD VDS Waveform
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 90 V, L = 4.41 mH
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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