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| Datasheet File OCR Text: |
| PROCESS Small Signal MOSFET CP359R N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 9.1 x 9.1 MILS 3.9 MILS 2.5 MILS DIAMETER 3.9 x 3.9 MILS Al-Si - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 6 INCH WAFER 290,000 PRINCIPAL DEVICE TYPE CMRDM3590 R0 (13-May 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP359R Typical Electrical Characteristics R0 (13-May 2010) w w w. c e n t r a l s e m i . c o m |
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