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| SPP15N65C3 CoolMOSTM Power Transistor Features * Low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V nC PG-TO220-3-1 CoolMOS C3 designed for: * Notebook Adapter Type SPP15N65C3 Package PG-TO220-3 Marking 15N65C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) I D,pulse E AS E AR T C=25 C I D=3 A, V DD=50 V I D=5 A, V DD=50 V Value 15 9.4 45 460 0.8 mJ Unit A Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I AR dv /dt V GS V DS=0...480 V static AC (f>1 Hz) 5.0 50 20 30 156 -55 ... 150 A V/ns V Power dissipation Operating and storage temperature P tot T j, T stg T C=25 C W C Rev. 2.0 page 1 2007-12-13 SPP15N65C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Symbol Conditions IS I S,pulse T C=25 C Value 15 45 Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.8 62 K/W T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=V GS, I D=0.675 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=9.4 A, T j=25 C V GS=10 V, I D=9.4 A, T j=150 C Gate resistance RG f =1 MHz, open drain 650 2.1 3 0.5 3.9 25 A V - 25 0.25 100 0.28 nA - 0.68 1.4 Rev. 2.0 page 2 2007-12-13 SPP15N65C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=480 V, I F=I S, di F/dt =100 A/s V GS=0 V, I F=15 A, T j=25 C 1.0 420 8 32 1.2 V ns C A Q gs Q gd Qg V plateau V DD=480 V, I D=15 A, V GS=0 to 10 V 9 29 63 5.4 V nC C iss C oss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=15 A, R G=6.8 120 32 14 70 11 ns V GS=0 V, V DS=25 V, f =1 MHz 1600 540 67 pF Values typ. max. Unit 1) J-STD20 and JESD22 Limited only by maximum temperature. Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 2) 3) 4) 5) 6) Rev. 2.0 page 3 2007-12-13 SPP15N65C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 160 102 limited by on-state resistance 140 1 s 120 101 100 10 s 100 s P tot [W] I D [A] 1 ms DC 10 ms 80 60 10 40 0 20 10-1 0 25 50 75 100 125 150 100 101 102 103 0 T C [C] V DS [V] 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 50 20 V 10 V 3 Max. transient thermal impedance Z(thJC)=f(tp) parameter: D=t p/T 100 0.5 40 8V 7V 0.2 Z thJC [K/W] 30 10 -1 0.05 0.02 I D [A] 0.1 6V 20 5.5 V 0.01 single pulse 10 5V 4.5 V 10 -2 0 10-4 10-3 10-2 10-1 0 5 10 15 20 25 10-5 t p [s] V DS [V] Rev. 2.0 page 4 2007-12-13 SPP15N65C3 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 25 20 V 10 V 8V 20 V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 4 20 6V 7V 5.5 V 3 7V R DS(on) [] 15 I D [A] 5V 2 6.5 V 10 4.5 V 6V 1 5 5V 5.5 V 0 0 5 10 15 20 25 0 0 10 20 30 40 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D= 9.4 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.8 50 25C 40 0.6 R DS(on) [] 30 0.4 98 % typ I D [A] 150C 20 0.2 10 0 -50 0 50 100 150 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2007-12-13 SPP15N65C3 9 Typ. gate charge V GS=f(Q gate); I D= 15 A pulsed parameter: V DD 10 9 120 V 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 150 C, 98% 8 7 6 480 V 25 C 101 25 C, 98% 150 C V GS [V] 5 4 3 2 1 0 0 20 40 60 80 I F [A] 100 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=3 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 500 740 720 400 700 V BR(DSS) [V] 20 60 100 140 180 300 680 E AS [mJ] 660 200 640 620 100 600 0 580 -50 -10 30 70 110 150 T j [C] T j [C] Rev. 2.0 page 6 2007-12-13 SPP15N65C3 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 12 104 9 Ciss E oss [J] 200 300 400 500 103 C [pF] 6 102 Coss Crss 3 101 100 0 100 0 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 page 7 2007-12-13 SPP15N65C3 Definition of diode switching characteristics Rev. 2.0 page 8 2007-12-13 SPP15N65C3 PG-TO220-3: Outlines Rev. 2.0 page 9 2007-12-13 SPP15N65C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2007-12-13 |
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