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PD- 96154A IRF7757GPBF l l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free HEXFET(R) Power MOSFET VDSS 20V RDS(on) max (mW) 35@VGS = 4.5V 40@VGS = 2.5V ID 4.8A 3.8A Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de' ! " # A2AT !A2AB "A2AT! #A2AB! 'A2A9 &A2A9 %A2A9 $A2A9 & % $ signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 4.8 3.9 19 1.2 0.76 9.5 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 105 Units C/W www.irf.com 1 05/14/09 IRF7757GPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.013 --- --- --- --- --- --- --- --- 15 2.5 4.8 9.5 9.2 36 14 1340 180 132 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 35 VGS = 4.5V, ID = 4.8A m 40 VGS = 2.5V, ID = 3.8A 1.2 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.8A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C 100 VGS = 12V nA -100 VGS = -12V 23 ID = 4.8A --- nC VDS = 16V --- VGS = 4.5V --- VDD = 10V --- ID = 1.0A ns --- R G = 6.2 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 20 10 1.2 A 19 1.2 30 15 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.2A, VGS = 0V TJ = 25C, IF = 1.2A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7757GPBF 1000 VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 100 100 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 10 1 1.5V 20s PULSE WIDTH Tj = 25C 1.5V 20s PULSE WIDTH Tj = 150C 0.1 1 10 100 0.1 0.1 1 10 100 1 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.8A ID, Drain-to-Source Current () 1.5 10.00 T J = 150C 1.0 T J = 25C VDS = 15V 20s PULSE WIDTH 1.5 2.0 2.5 3.0 0.5 1.00 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7757GPBF 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 5 ID = 4.8A VGS , Gate-to-Source Voltage (V) VDS = 16V VDS = 10V 4 C, Capacitance(pF) Ciss 1000 3 2 Coss Crss 100 1 10 100 1 0 0 4 8 12 16 20 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100.00 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10.00 T J = 150C 10 100sec 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 0 1 10 100 1.00 T J = 25C VGS = 0V 0.10 0.1 0.5 0.9 1.2 1.6 2.0 VSD, Source-toDrain Voltage (V) 0.1 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7757GPBF 5.0 VDS 4.0 RD V GS RG ID , Drain Current (A) D.U.T. + 3.0 - VDD VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 0.0 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 P DM t1 t2 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7757GPBF R DS(on) , Drain-to -Source On Resistance ( ) RDS (on) , Drain-to-Source On Resistance () 0.05 0.050 VGS = 2.5V 0.040 0.04 ID = 4.8A 0.03 VGS = 4.5V 0.030 0.02 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.020 0 5 10 15 20 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F VGS VG QGS QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com IRF7757GPBF 1.3 120 110 VGS(th) Gate threshold Voltage (V) 1.1 100 90 80 Power (W) 0.9 70 60 50 40 30 ID = 250A 0.7 0.5 20 10 0.3 -75 -50 -25 0 25 50 75 100 125 150 0 1.00 10.00 100.00 1000.00 T J , Temperature ( C ) Time (sec) Fig 15. Typical Threshold Voltage Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7757GPBF TSSOP8 Package Outline Dimensions are shown in milimeters (inches) T H 7 P G 6 6 6! i p 9 @ @ r G G hhh iii ppp qqq % !Y @! 9 $ 7PUCATD9@T % @ @ qqq 867 HP $"66A9DH@ITDPIT HDGGDH@U@ST H6Y HDI IPH ! $ $ ' $ ( " ( ! !( " " %#A7T8 #" ## #$ %$A7T8 #$ % &$ !$A7T8 ' $ ! DI8C@T IPH H6Y #&! ! $( "! "( # &$ ' "% &' $ ' !! !$ A7T8 & &" && !$% &' !"% !( A7T8 ' "( "( ( &' HDI DI9@Y H6SF "Y r 7 $ r! 6 8 'YAi iii hhh 8 6 ppp 6! # C 'YAp G 867 'ATVSA & 'YAG G@69A6TTDBIH@IUT 9 T T B ' & % $ 9 T T 9 9 T T B ' & % $ 9! T! T! B! ! " # TDIBG@ 9D@ ! " # 9V6G 9D@ IPU@T AA9DH@ITDPIDIBA6I9AUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STA6I9ADI8C@T "AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S #AAA96UVHAQG6I@ACADTAGP86U@9A6TATCPXI $AAA96UVHA6A6I9A7AUPA7@A9@U@SHDI@9A6UA96UVHAQG6I@AC %AAA9DH@ITDPITA9A6I9A@ A6S@AH@6TVS@9A6UA96UVHAQG6I@AC &AAA9DH@ITDPIAGADTAUC@AG@69AG@IBUCAAPSATPG9@SDIBAUPA6ATV7TUS6U@ 'AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AH $"66 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF7757GPBF TSSOP8 Part Marking Information @Y6HQG@) UCDTADTA6IADSA''$!Q7A Q6SUAIVH7@S GPUA8P9@ 96U@A8P9@AXX 6TT@H7GATDU@A8P9@ QA2AGrhqArrAvqvph TSSOP-8 Tape and Reel Information %A A "A 'A A@@9A9DS@8UDPI % IPU@T) AAU6Q@AEAS@@GAPVUGDI@A8PIAPSHTAUPA@D6#' AEA@D6$# Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2009 www.irf.com 9 |
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