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| LED - Chip discontinued Radiation Infrared 460 360 300 ELC-980-28-1 10.04.2007 Type MQW Technology InGaAs/GaAs rev. 03/06 Electrodes N (cathode) up typ. dimensions (m) typ. thickness 260 (20) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m, solder able PD-02 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power1 Radiant power2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Symbol Min Typ Max Unit IF = 100 mA IR = 10 A IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA VF VR e e p 0.5 tr, tf 970 5 0.5 1.2 1.5 V V 1.0 2.0 980 80 10 1000 mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type EL-980-28-1 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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