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 CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG
SOT-23 CASE
* Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25 C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0s Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR BVR VF VF VF CT trr
SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg JA
300 350 200 225 625 4.0 1.0 350 -65 to +150 357
UNITS V V mA mA mA A A mW C C/W
CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) TEST CONDITIONS MIN MAX VR=280V 100 VR=280V, TA=150C 100 IR=100A 350 IF=20mA 0.87 IF=100mA 1.0 IF=200mA 1.25 VR=0, f=1.0MHz 5.0 IR=IF=30mA, Rec. to 3.0mA, RL=100 50
UNITS nA A V V V V pF ns
R3 (25-January 2010)
CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG
* Device is Halogen Free by design
R3 (25-January 2010)
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