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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366 DESCRIPTION *With TO-220F package *Complement to type 2SD2058 *Low collector saturation voltage: VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A *Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS *With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -7 -3 -0.5 2.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A ;IB=-0.2A IC=-0.5A;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 60 20 MIN -60 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SB1366 TYP. MAX UNIT V -1.0 -1.0 -0.1 -0.1 200 V V mA mA 9.0 150 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A IB1=-IB2=-0.2A VCC=-30V ,RL=15D 0.4 1.7 0.5 s s s hFE-1 Classifications O 60-120 Y 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1366 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1366 4 |
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