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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package Low Forward Voltage Small Total Capacitance : USM. : VF=0.92V (Typ.). 2 M KDS120 SILICON EPITAXIAL TYPE DIODE E B M D 3 DIM A B C D E G H J K A Fast Reverse Recovery Time : trr=1.6ns(Typ.). : CT=2.2pF (Typ.). 1 MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN J G C L MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55150 E UNIT V V mA mA A mW E H N K N L M N 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 USM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking Lot No. Type Name A3 ELECTRICAL CHARACTERISTICS (Ta=25E CHARACTERISTIC ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 0.92 2.2 1.6 MAX. 1.20 0.5 4.0 4.0 i A pF nS V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr 2008.9. 8 Revision No : 4 1/2 KDS120 I F - VF 10 FORWARD CURRENT I F (mA) 10 10 C 10 0 Ta = 3 IR - VR 10 REVERSE CURRENT I R (A) Ta=100 C 2 1 Ta=75 C Ta=50 C Ta 1 10 10 -1 Ta =-2 5 =2 5 10 C C -1 10 -2 Ta=25 C -2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) C T - VR REVERSE RECOVERY TIME t rr (ns) 2.5 TOTAL CAPACITANCE C T (pF) 2.0 1.5 1.0 0.5 0 f=1MHz Ta=25 C t rr - I F 100 50 30 Ta=25 C Fig. 1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 0.2 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) FORWARD CURRENT I F (mA) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0 INPUT 0.01F DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50) I F =10mA 0 IR WAVEFORM 0.1 I R 50 2k -6V 50ns E t rr PULSE GENERATOR (R OUT =50) 2008. 9. 8 Revision No : 4 50 2/2 |
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