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PD - 97426
INSULATED GATE BIPOLAR TRANSISTOR Features
* * * * * * * * * Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package
IRGP4069PBF IRGP4069-EPbF
C
VCES = 600V IC(Nominal) = 35A
G E
tSC 5s, TJ(max) = 175C
n-channel
VCE(on) typ. = 1.6V
Benefits
* High Efficiency in a Wide Range of Applications * Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses * Rugged Transient Performance for Increased Reliability * Excellent Current Sharing in Parallel Operation
C
C
GC
E
TO-247AC IRGP4069PBF
E GC TO-247AD IRGP4069-EPbF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C INOMINAL ICM ILM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Max.
600 76 50 35 105 140 20 30 268 134 -55 to +175
Units
V
c
A V W
C
Thermal Resistance
Parameter
RJC RCS RJA Thermal Resistance Junction-to-Case
f
Min.
--- --- ---
Typ.
--- 0.24 40
Max.
0.56 --- ---
Units
C/W
Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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10/02/09
IRGP4069PBF/IRGP4069-EPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- 4.0 -- -- -- -- --
Typ.
-- 1.3 1.6 1.9 2.0 -- -18 25 1.0 770 --
Max.
-- -- 1.85 -- -- 6.5 -- -- 20 -- 100
Units
V
Conditions
VGE = 0V, IC = 100A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e d d = 175C d
mV/C VGE = 0V, IC = 1mA (25C-175C) IC = 35A, VGE = 15V, TJ = 25C V V IC = 35A, VGE = 15V, TJ = 150C IC = 35A, VGE = 15V, TJ VCE = VGE, IC = 1.0mA
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current
gfe ICES IGES
mV/C VCE = VGE, IC = 1.0mA (25C - 175C) VCE = 50V, IC = 35A, PW = 60s S A nA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area
Min.
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ.
69 18 29 390 632 1022 46 33 105 44 1013 929 1942 43 35 127 61 2113 197 65
Max.
104 27 44 508 753 1261 56 42 117 54 -- -- -- -- -- -- -- -- -- --
Units
IC = 35A nC VGE = 15V VCC = 400V
Conditions
IC = 35A, VCC = 400V, VGE = 15V J RG = 10, L = 200H, LS = 150nH, TJ = 25C
Energy losses include tail & diode reverse recovery
IC = 35A, VCC = 400V, VGE = 15V ns RG = 10, L = 200H, LS = 150nH, TJ = 25C
IC = 35A, VCC = 400V, VGE=15V J RG=10, L=200H, LS=150nH, TJ = 175C
Energy losses include tail & diode reverse recovery
IC = 35A, VCC = 400V, VGE = 15V ns RG = 10, L = 200H, LS = 150nH TJ = 175C pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175C, IC = 140A VCC = 480V, Vp =600V Rg = 10, VGE = +20V to 0V
FULL SQUARE 5 -- -- s
VCC = 400V, Vp =600V Rg = 10, VGE = +15V to 0V
Notes: VCC = 80% (VCES), VGE = 20V, L = 19H, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C.
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IRGP4069PBF/IRGP4069-EPbF
80 70 60 50 40 30 20 10 0 25 50 75 100 T C (C) 125 150 175
300 250 200
Ptot (W)
IC (A)
150 100 50 0 25 50 75 100 T C (C) 125 150 175
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
1000
100 100sec 10sec 100
IC (A)
10
1msec DC
IC (A)
10 1 1000
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 VCE (V) 100 10 100 VCE (V) 1000
Fig. 3 - Forward SOA TC = 25C, TJ 175C; VGE =15V
140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
Fig. 4 - Reverse Bias SOA TJ = 175C; VGE =20V
140 120 100 80 60 40 20 0 VGE = 18V VGE = 15V VGE = 12V
ICE (A)
80 60 40 20 0 0 2 4
VGE = 10V VGE = 8.0V
6
8
10
0
2
4
6
8
10
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 60s
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 60s
VCE (V)
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3
IRGP4069PBF/IRGP4069-EPbF
140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
20 18 16 14
VCE (V)
ICE (A)
80 60 40 20 0 0
12 10 8 6 4 2 0
ICE = 18A ICE = 35A ICE = 70A
2
4
6
8
10
5
10 VGE (V)
15
20
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics TJ = 175C; tp = 60s
20 18 16 14 20 18 16 14
Fig. 8 - Typical VCE vs. VGE TJ = -40C
VCE (V)
VCE (V)
12 10 8 6 4 2 0 5 10
ICE = 18A ICE = 35A ICE = 70A
12 10 8 6 4 2 0
ICE = 18A ICE = 35A ICE = 70A
15 VGE (V)
20
5
10 VGE (V)
15
20
Fig. 9 - Typical VCE vs. VGE TJ = 25C
140
IC, Collector-to-Emitter Current (A)
Fig. 10 - Typical VCE vs. VGE TJ = 175C
4000 3500
120 100 80 60 40 20 0 4 5 6 7 8 9 10 11 12 13 14 VGE, Gate-to-Emitter Voltage (V) T J = 175C TJ = 25C
3000
Energy (J)
2500 2000 1500 1000 500 0 0 10 20 30
EON
EOFF
40
50
60
70
IC (A)
Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 60s
Fig. 12 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
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IRGP4069PBF/IRGP4069-EPbF
1000
3000 2500
Swiching Time (ns)
EON
Energy (J)
tdOFF 100 tF
2000 EOFF 1500
tdON tR 10 0 10 20 30 40 50 60 70 IC (A)
1000
500 0 25 50 Rg () 75 100
Fig. 13 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
1000
Fig. 14 - Typ. Energy Loss vs. RG TJ = 175C; L = 210H; VCE = 400V, ICE = 35A; VGE = 15V
20 Isc 15 300
Swiching Time (ns)
Tsc
225
Current (A)
Time (s)
tdOFF 100 tF
10
150
tdON
5
tR 10 0 10 20 30 40 50 RG ()
75
0 8 10 12 14 16 18 VGE (V)
0
Fig. 15 - Typ. Switching Time vs. RG TJ = 175C; L = 210H; VCE = 400V, ICE = 35A; VGE = 15V
10000
Fig. 16 - VGE vs. Short Circuit Time VCC = 400V; TC = 25C
Cies
Capacitance (pF)
1000
100
Coes Cres
10 0 100 200 300 400 500 VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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5
IRGP4069PBF/IRGP4069-EPbF
16
VGE, Gate-to-Emitter Voltage (V)
14 12 10 8 6 4 2 0 0 10 20
VCES = 400V VCES = 300V
30
40
50
60
70
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE ICE = 35A; L = 740H
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.01041 0.15911 0.23643 0.15465
0.000006 0.002035
i (sec)
0.01
0.02 0.01
0.000142 0.013806
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGP4069PBF/IRGP4069-EPbF
L
L
0
DUT 1K
VCC
80 V +
-
DUT Rg
VCC
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT L
4X DC DUT VCC
-5V DUT / DRIVER Rg VCC
SCSOA
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC ICM
100K D1
DUT
Rg
22K
C sense
VCC
G force
DUT
0.0075F
E sense
E force
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
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IRGP4069PBF/IRGP4069-EPbF
600 500 400
90% ICE
60 tf 50 40 30 20
5% V CE
600 500 400
ICE (A)
TEST CURRENT
60 50 40 30
tr
VCE (V)
VCE (V)
200 100 0
Eoff Loss
200 100 0 -100 6.4 6.6 6.8
10% test current
90% test current 5% V CE
20 10 0 -10
5% ICE
10 0 -10
-100 -0.5
Eon Loss 7 7.2
0
0.5
1
1.5
2
time(s)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4
time (s)
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4
700 600 500 400 Vce (V) 300 200 100 0 -100 -4.5 VCE ICE
350 300 250 200 150 100 50 0 -50 0.5 5.5 Time (uS)
Fig. WF3 - Typ. S.C. Waveform @ TJ = 25C using Fig. CT.3
10.5
8
ICE (A)
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ICE (A)
300
300
IRGP4069PBF/IRGP4069-EPbF
Dimensions are shown in millimeters (inches)
TO-247AC Package Outline
TO-247AC Part Marking Information
@Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA Q6SUAIVH7@S
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DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRGP4069PBF/IRGP4069-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
@Y6HQG@) UCDTADTA6IADSBQ"7 !F9@ XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
A"$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SAA2A! X@@FA"$ GDI@AC
TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/09
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